中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

35 records (took 0.017 seconds)

    Semiconductor element and methods for manufacturing the same
    24.
    发明授权
    Semiconductor element and methods for manufacturing the same 有权

    公开(公告)号：US09938141B2

    公开(公告)日：2018-04-10

    申请号：US15051310

    申请日：2016-02-23

    Applicant: Infineon Technologies AG

    Inventor： Christian Bretthauer ,  Dirk Meinhold

    IPC: B81C1/00

    CPC classification number: B81C1/00904 ,  B81B2201/0264 ,  B81B2207/015 ,  B81B2207/07

    Abstract: A semiconductor element and method are provided such that the method includes providing a processed substrate arrangement including a processed semiconductor substrate and a metallization layer structure on a main surface of the processed semiconductor substrate. The method further includes release etching for generating a kerf in the metallization layer structure at a separation region in the processed semiconductor substrate, the separation region defining a border between a die region of the processed substrate arrangement and at least a second region of the processed substrate arrangement.

    Semiconductor device for emitting frequency-adjusted infrared light
    26.
    发明授权
    Semiconductor device for emitting frequency-adjusted infrared light 有权
    用于发射频率调节的红外光的半导体器件

    公开(公告)号：US09570659B2

    公开(公告)日：2017-02-14

    申请号：US14052962

    申请日：2013-10-14

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： Alfons Dehe ,  Stefan Kolb ,  Horst Theuss ,  Dirk Meinhold

    IPC: H01L33/44 ,  H01L33/58

    CPC classification number: H01L33/44 ,  H01L33/58

    Abstract: A semiconductor device for emitting frequency-adjusted infrared light includes a lateral emitter structure and a lateral filter structure. The lateral emitter structure is configured to emit infrared light with an emitter frequency distribution. Further, the lateral filter structure is configured to filter the infrared light emitted by the lateral emitter structure so that frequency-adjusted infrared light is provided with an adjusted frequency distribution. The frequency range of the adjusted frequency distribution is narrower than a frequency range of the emitter frequency distribution. Further, a lateral air gap is located between the lateral emitter structure and the lateral filter structure.

    Abstract translation: 用于发射频率调节的红外光的半导体器件包括侧向发射极结构和侧向滤波器结构。 横向发射极结构被配置为发射具有发射极频率分布的红外光。 此外，横向滤波器结构被配置为对由横向发射器结构发射的红外光进行滤波，使得频率调节的红外光具有调整的频率分布。 调整频率分布的频率范围比发射体频率分布的频率范围窄。 此外，横向气隙位于横向发射器结构和侧向过滤器结构之间。

    Device and method for stopping etching process
    27.
    发明授权
    Device and method for stopping etching process 有权
    用于停止蚀刻工艺的装置和方法

    公开(公告)号：US09305798B2

    公开(公告)日：2016-04-05

    申请号：US13850206

    申请日：2013-03-25

    Applicant: Infineon Technologies AG

    Inventor： Lothar Brencher ,  Dirk Meinhold ,  Michael Hartenberger ,  Georg Seidemann ,  Wolfgang Dickenscheid

    IPC: H01L21/461 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/768

    CPC classification number: H01L21/76832 ,  H01L21/3083 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76877

    Abstract: A method for etching a layer assembly, the layer assembly including an intermediate layer sandwiched between an etch layer and a stop layer, the method including a step of etching the etch layer using a first etchant and a step of etching the intermediate layer using a second etchant. The first etchant includes a first etch selectivity of at least 5:1 with respect to the etch layer and the intermediate layer. The second etchant includes a second etch selectivity of at least 5:1 with respect to the intermediate layer and the stop layer. The first etchant being is different from the second etchant.

    Abstract translation: 一种用于蚀刻层组件的方法，所述层组件包括夹在蚀刻层和停止层之间的中间层，所述方法包括使用第一蚀刻剂蚀刻所述蚀刻层的步骤，以及使用第二蚀刻剂蚀刻所述中间层的步骤 蚀刻剂 第一蚀刻剂包括相对于蚀刻层和中间层至少5:1的第一蚀刻选择性。 第二蚀刻剂包括相对于中间层和停止层至少5:1的第二蚀刻选择性。 第一蚀刻剂与第二蚀刻剂不同。

    Device and Method for Stopping Etching Process
    28.
    发明申请
    Device and Method for Stopping Etching Process 审中-公开
    停止蚀刻工艺的装置和方法

    公开(公告)号：US20130288481A1

    公开(公告)日：2013-10-31

    申请号：US13850206

    申请日：2013-03-25

    Applicant: Infineon Technologies AG

    Inventor： Lothar Brencher ,  Dirk Meinhold ,  Michael Hartenberger ,  Georg Seidemann ,  Wolfgang Dickenscheid

    IPC: H01L21/308

    CPC classification number: H01L21/76832 ,  H01L21/3083 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76877

    Abstract: A method for etching a layer assembly, the layer assembly including an intermediate layer sandwiched between an etch layer and a stop layer, the method including a step of etching the etch layer using a first etchant and a step of etching the intermediate layer using a second etchant. The first etchant includes a first etch selectivity of at least 5:1 with respect to the etch layer and the intermediate layer. The second etchant includes a second etch selectivity of at least 5:1 with respect to the intermediate layer and the stop layer. The first etchant being is different from the second etchant.

    Abstract translation: 一种用于蚀刻层组件的方法，所述层组件包括夹在蚀刻层和停止层之间的中间层，所述方法包括使用第一蚀刻剂蚀刻所述蚀刻层的步骤，以及使用第二蚀刻剂蚀刻所述中间层的步骤 蚀刻剂 第一蚀刻剂包括相对于蚀刻层和中间层至少5:1的第一蚀刻选择性。 第二蚀刻剂包括相对于中间层和停止层至少5:1的第二蚀刻选择性。 第一蚀刻剂与第二蚀刻剂不同。

Patent Agency Ranking