公开(公告)号：US20190326191A1

公开(公告)日：2019-10-24

申请号：US16374674

申请日：2019-04-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masao KONDO ,  Isao OBU ,  Yasunari UMEMOTO ,  Yasuhisa YAMAMOTO ,  Masahiro SHIBATA ,  Takayuki TSUTSUI

IPC: H01L23/367 ,  H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L23/48 ,  H03F1/30

Abstract: A semiconductor chip includes an active element on a first surface of a substrate. A heat-conductive film having a higher thermal conductivity than the substrate is disposed at a position different from a position of the active element. An insulating film covering the active element and heat-conductive film is disposed on the first surface. A bump electrically connected to the heat-conductive film is disposed on the insulating film. A via-hole extends from a second surface opposite to the first surface to the heat-conductive film. A heat-conductive member having a higher thermal conductivity than the substrate is continuously disposed from a region of the second surface overlapping the active element in plan view to an inner surface of the via-hole. The bump is connected to a land of a printed circuit board facing the first surface. The semiconductor chip is sealed with a resin.

公开(公告)号：US20190190455A1

公开(公告)日：2019-06-20

申请号：US16223300

申请日：2018-12-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masao KONDO ,  Satoshi TANAKA ,  Yasuhisa YAMAMOTO ,  Takayuki TSUTSUI ,  Isao OBU

IPC: H03F1/02 ,  H03F3/19 ,  H03G3/30 ,  H03F3/24

CPC classification number: H03F1/0211 ,  H03F3/19 ,  H03F3/245 ,  H03F2200/102 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2203/21103 ,  H03F2203/21139 ,  H03G3/3042 ,  H03G2201/106

Abstract: A transmission unit includes a first transistor that amplifies power of a first signal and outputs a second signal, a power supply circuit that supplies to the first transistor a power supply voltage that changes in accordance with an amplitude level of the first signal, and an attenuator that attenuates the first signal in such a manner that an amount of attenuation of the first signal increases with a decrease in the power supply voltage when the power supply voltage is less than a first level.

公开(公告)号：US20190088768A1

公开(公告)日：2019-03-21

申请号：US16125234

申请日：2018-09-07

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Yasunari UMEMOTO ,  Masahiro SHIBATA ,  Shigeki KOYA ,  Masao KONDO ,  Takayuki TSUTSUI

IPC: H01L29/737 ,  H01L29/205 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L21/306 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311 ,  H01L21/308 ,  H01L29/66 ,  H03F3/213 ,  H03F3/195

Abstract: A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

公开(公告)号：US20180331208A1

公开(公告)日：2018-11-15

申请号：US16026841

申请日：2018-07-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari UMEMOTO ,  Shigeki KOYA ,  Isao OBU

IPC: H01L29/737 ,  H01L29/08 ,  H01L29/205 ,  H01L29/66

CPC classification number: H01L29/7371 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/205 ,  H01L29/66242

Abstract: A collector layer of an HBT includes a high-concentration collector layer and a low-concentration collector layer thereon. The low-concentration collector layer includes a graded collector layer in which the energy band gap varies to narrow with increasing distance from the base layer. The electron affinity of the semiconductor material for the base layer is greater than that of the semiconductor material for the graded collector layer at the point of the largest energy band gap by about 0.15 eV or less. The electron velocity in the graded collector layer peaks at a certain electric field strength. In the graded collector layer, the strength of the quasi-electric field, an electric field that acts on electrons as a result of the varying energy band gap, is between about 0.3 times and about 1.8 times the peak electric field strength, the electric field strength at which the electron velocity peaks.

公开(公告)号：US20160197052A1

公开(公告)日：2016-07-07

申请号：US15070094

申请日：2016-03-15

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Shinya OSAKABE

IPC: H01L23/00 ,  H01L23/538

CPC classification number: H01L24/14 ,  H01L21/76885 ,  H01L23/13 ,  H01L23/49822 ,  H01L23/5386 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05144 ,  H01L2224/11462 ,  H01L2224/13026 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2924/12042 ,  H01L2924/30101 ,  H01L2924/351 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/451 ,  H03H9/0514 ,  H03H9/059 ,  H01L2924/00

Abstract: A bump-equipped electronic component includes a circuit substrate and first and second bumps which are disposed on a principal surface of the circuit substrate and have different cross-sectional areas in a direction parallel or substantially parallel to the principal surface. One of the first and second bumps having a smaller cross-sectional area includes a height adjustment layer disposed in a direction perpendicular or substantially perpendicular to the principal surface.

Abstract translation: 配有凸块的电子部件包括电路基板和设置在电路基板的主表面上并且在与主表面平行或基本平行的方向上具有不同横截面积的第一和第二凸块。 具有较小横截面积的第一和第二凸块中的一个包括沿与主表面垂直或基本垂直的方向设置的高度调节层。

公开(公告)号：US20220029004A1

公开(公告)日：2022-01-27

申请号：US17495588

申请日：2021-10-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Yasunari UMEMOTO ,  Masahiro SHIBATA ,  Shigeki KOYA ,  Masao KONDO ,  Takayuki TSUTSUI

IPC: H01L29/737 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L21/306 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311 ,  H01L21/308 ,  H01L29/66 ,  H03F3/213 ,  H03F3/195 ,  H01L29/205 ,  H03F3/21 ,  H03F1/56 ,  H03F3/24 ,  H01L23/00

Abstract: A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

公开(公告)号：US20210183854A1

公开(公告)日：2021-06-17

申请号：US17188961

申请日：2021-03-01

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Shigeki KOYA ,  Yasunari UMEMOTO ,  Takayuki TSUTSUI

IPC: H01L27/082 ,  H01L23/00 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L29/66 ,  H01L23/498 ,  H01L21/8252

Abstract: A semiconductor device has a semiconductor substrate, and multiple first bipolar transistors on the first primary surface side of the semiconductor substrate. The first bipolar transistors have a first height between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. The semiconductor device further has at least one second bipolar transistor on the first primary surface side of the semiconductor substrate. The second bipolar transistor have a second height, greater than the first height, between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. Also, the semiconductor has a first bump stretching over the multiple first bipolar transistors and the at least one second bipolar transistor.

公开(公告)号：US20210091215A1

公开(公告)日：2021-03-25

申请号：US17109897

申请日：2020-12-02

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari UMEMOTO ,  Shigeki KOYA ,  Isao OBU

IPC: H01L29/737 ,  H01L29/66 ,  H01L29/08

Abstract: A collector layer of an HBT includes a high-concentration collector layer and a low-concentration collector layer thereon. The low-concentration collector layer includes a graded collector layer in which the energy band gap varies to narrow with increasing distance from the base layer. The electron affinity of the semiconductor material for the base layer is greater than that of the semiconductor material for the graded collector layer at the point of the largest energy band gap by about 0.15 eV or less. The electron velocity in the graded collector layer peaks at a certain electric field strength. In the graded collector layer, the strength of the quasi-electric field, an electric field that acts on electrons as a result of the varying energy band gap, is between about 0.3 times and about 1.8 times the peak electric field strength, the electric field strength at which the electron velocity peaks.

公开(公告)号：US20210044256A1

公开(公告)日：2021-02-11

申请号：US17082990

申请日：2020-10-28

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shigeki KOYA ,  Takayuki TSUTSUI ,  Yasunari UMEMOTO ,  Isao OBU ,  Satoshi TANAKA

IPC: H03F1/32 ,  H03G3/00 ,  H03F1/02 ,  H03F1/56 ,  H03F3/24 ,  H03F3/19 ,  H03F3/21 ,  H03G3/30

Abstract: A power amplifier module includes a first amplifier circuit that amplifies a radio frequency signal with a first gain corresponding to a first control signal to generate a first amplified signal; a second amplifier circuit that amplifies the first amplified signal with a second gain corresponding to a second control signal to generate a second amplified signal; and a control unit that generates the first control signal and the second control signal. The second control signal is a control signal for increasing a power-supply voltage for the second amplifier circuit as a peak-to-average power ratio of the radio frequency signal increases. The first control signal is a control signal for controlling the first gain of the first amplifier circuit so that a variation in the second gain involved in a variation in the power-supply voltage for the second amplifier circuit is compensated for.

公开(公告)号：US20200335491A1

公开(公告)日：2020-10-22

申请号：US16921379

申请日：2020-07-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kenji SASAKI ,  Takayuki TSUTSUI ,  Isao OBU ,  Yasuhisa YAMAMOTO

IPC: H01L27/02 ,  H03F3/213 ,  H01L23/00 ,  H01L29/423 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H03F1/52 ,  H03F3/195 ,  H01L29/861 ,  H01L29/06 ,  H01L29/737

Abstract: An amplifier circuit including a semiconductor element is formed on a substrate. A protection circuit is formed including a plurality of protection diodes that are formed on the substrate and that are connected in series with each other, the protection circuit being connected to an output terminal of the amplifier circuit. A pad conductive layer is formed that at least partially includes a pad for connecting to a circuit outside the substrate. An insulating protective film covers the pad conductive layer. The insulating protective film includes an opening that exposes a partial area of a surface of the pad conductive layer, and that covers another area. A first bump is formed on the pad conductive layer on a bottom surface of the opening, and a second bump at least partially overlaps the protection circuit in plan view and is connected to a ground (GND) potential connected to the amplifier circuit.