公开(公告)号：US20100151694A1

公开(公告)日：2010-06-17

申请号：US12334425

申请日：2008-12-12

Applicant: Bruce W. Peuse ,  Yaozhi Hu ,  Paul Janis Timans ,  Guangcai Xing ,  Wilfried Lerch ,  Sing-Pin Tay ,  Stephen E. Savas ,  Georg Roters ,  Zsolt Nenyei ,  Ashok Sinha

Inventor： Bruce W. Peuse ,  Yaozhi Hu ,  Paul Janis Timans ,  Guangcai Xing ,  Wilfried Lerch ,  Sing-Pin Tay ,  Stephen E. Savas ,  Georg Roters ,  Zsolt Nenyei ,  Ashok Sinha

IPC: H01L21/316 ,  C23C16/00

CPC classification number: H01L21/31654 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68771

Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

Abstract translation: 描述了等离子体辅助低温自由基氧化。 除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。 选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。 可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。 通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

公开(公告)号：US07734439B2

公开(公告)日：2010-06-08

申请号：US10178950

申请日：2002-06-24

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: G06F19/00

CPC classification number: G01J5/0896 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/0285 ,  G01J5/06 ,  G01J5/08 ,  G01J5/0803 ,  G01J5/0821 ,  G01J5/0831 ,  G01J5/0846 ,  G01J5/089 ,  G01J5/522 ,  G01J5/58 ,  G01J2005/0048 ,  G01J2005/065 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248

Abstract: A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.

Abstract translation: 公开了一种在热处理室中校准温度测量装置，例如高温计的方法和系统。 根据本发明，该系统包括将光能发射到包含在热处理室中的基板上的校准光源。 然后光检测器检测正在透过基板的光量。 然后使用检测到的光能量来校准在系统中使用的温度测量装置。

公开(公告)号：US20090161724A1

公开(公告)日：2009-06-25

申请号：US11961526

申请日：2007-12-20

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: G01K11/00 ,  G01K15/00

CPC classification number: G01K11/125

Abstract: The temperature of an object such as a semiconductor wafer that includes silicon can be determined based on the variation of the optical absorption coefficient of silicon with temperature. Temperatures above about 850° C., can be found by measuring phenomena that are affected by the magnitude of the optical absorption coefficient, especially at wavelengths >˜1 μm. Phenomena could include measuring light reflected, transmitted, emitted, absorbed, or scattered by the wafer and deriving the absorption coefficient from the measurements and then deriving temperature from the absorption coefficient. Temperature could be determined from a model relating phenomena directly to temperature, the model constructed based on absorption behaviour and techniques discussed herein. The resulting temperature could be used to calibrate or control a rapid thermal processing chamber or other apparatus.

Abstract translation: 可以基于硅的光吸收系数随温度的变化来确定诸如包括硅的半导体晶片的物体的温度。 高于约850℃的温度可以通过测量受光吸收系数的大小影响的现象，特别是在>〜1m波长处。 现象可以包括测量由晶片反射，透射，发射，吸收或散射的光，并从测量中导出吸收系数，然后从吸收系数导出温度。 温度可以从直接与现象直接相关的模型来确定，基于吸收行为构建的模型和本文讨论的技术。 所得温度可用于校准或控制快速热处理室或其它设备。

公开(公告)号：US20090098742A1

公开(公告)日：2009-04-16

申请号：US12270377

申请日：2008-11-13

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: H01L21/324 ,  H05B3/68 ,  H05B6/00

CPC classification number: H01L21/67115 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12 ,  F27B17/0025 ,  G02B5/124

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract translation: 公开了一种用于热处理半导体晶片的设备。 该装置包括加热装置，其包含用于将光能发射到晶片上的组装线性灯。 线性灯可以放置在各种配置中。 根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。 调谐装置可以是例如灯或激光器。

公开(公告)号：US20080002753A1

公开(公告)日：2008-01-03

申请号：US11478312

申请日：2006-06-29

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: G01K19/00

CPC classification number: G01K15/00 ,  G01J5/0007 ,  G01J5/0806 ,  G01J5/0831 ,  G01J5/0846 ,  G01K11/125

Abstract: Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.

Abstract translation: 用于晶片温度测量和温度测量装置的校准的方法和装置可以基于确定半导体晶片中的层的吸收。 可以通过将光引向晶片并且从入射光入射的表面下方测量从晶片反射的光来确定吸收。 校准晶片和测量系统可以被布置和配置，以便测量以预定角度反射到晶片表面的光并且其它光不是。 测量也可以基于评估晶片中或晶片上的图案的图像中的对比度。 其他测量可以利用基于反射或透射光的温度确定旁边的晶片内的光程长度的确定。

公开(公告)号：US07135656B2

公开(公告)日：2006-11-14

申请号：US11020806

申请日：2004-12-22

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: F27B5/14

CPC classification number: H01L21/67248 ,  F27B5/04 ,  F27B17/0025 ,  H01L21/67115

Abstract: A method and apparatus for heating semiconductor wafers in thermal processing chambers. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.

Abstract translation: 一种用于在热处理室中加热半导体晶片的方法和装置。 该装置包括非接触式温度测量系统，其利用诸如高温计的辐射传感装置来确定处理期间晶片的温度。 辐射感测装置通过监测晶片在特定波长处发射的辐射量来确定晶片的温度。 根据本发明，在用于过滤由用于在辐射感测装置工作的波长处加热晶片的灯发出的光的装置中包括光谱滤波器。 光谱滤光器包括诸如稀土元素的光吸收剂，稀土元素的氧化物，光吸收染料，金属或半导体材料。

公开(公告)号：US06970644B2

公开(公告)日：2005-11-29

申请号：US09747522

申请日：2000-12-21

Applicant: Zion Koren ,  Conor Patrick O'Carroll ,  Shuen Chun Choy ,  Paul Janis Timans ,  Rudy Santo Tomas Cardema ,  James Tsuneo Taoka ,  Arieh A. Strod

Inventor： Zion Koren ,  Conor Patrick O'Carroll ,  Shuen Chun Choy ,  Paul Janis Timans ,  Rudy Santo Tomas Cardema ,  James Tsuneo Taoka ,  Arieh A. Strod

IPC: C23C16/48 ,  C30B25/10 ,  C30B31/12 ,  H01L21/00 ,  F26B3/30

CPC classification number: H01L21/67115 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract translation: 公开了一种用于热处理半导体晶片的设备。 该装置包括加热装置，其包含用于将光能发射到晶片上的组装线性灯。 线性灯可以放置在各种配置中。 根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。 调谐装置可以是例如灯或激光器。

公开(公告)号：US06835914B2

公开(公告)日：2004-12-28

申请号：US10288271

申请日：2002-11-05

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: F27B514

CPC classification number: H01L21/67248 ,  F27B5/04 ,  F27B17/0025 ,  H01L21/67115

Abstract: A method and apparatus for heating semiconductor wafers in thermal processing chambers. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.

Abstract translation: 一种用于在热处理室中加热半导体晶片的方法和装置。 该装置包括非接触式温度测量系统，其利用诸如高温计的辐射传感装置来确定处理期间晶片的温度。 辐射感测装置通过监测晶片在特定波长处发射的辐射量来确定晶片的温度。 根据本发明，在用于过滤由用于在辐射感测装置工作的波长处加热晶片的灯发出的光的装置中包括光谱滤波器。 光谱滤光器包括诸如稀土元素的光吸收剂，稀土元素的氧化物，光吸收染料，金属或半导体材料。

公开(公告)号：US20120231558A1

公开(公告)日：2012-09-13

申请号：US13415963

申请日：2012-03-09

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: H01L21/66

CPC classification number: H01L21/67115 ,  G01J5/0003 ,  G01N21/55 ,  H01L21/67248 ,  H01L22/24

Abstract: A method and system are disclosed for determining at least one optical characteristic of a substrate, such as a semiconductor wafer. Once the optical characteristic is determined, at least one parameter in a processing chamber may be controlled for improving the process. For example, in one embodiment, the reflectivity of one surface of the substrate may first be determined at or near ambient temperature. From this information, the reflectance and/or emittance of the wafer during high temperature processing may be accurately estimated. The emittance can be used to correct temperature measurements using a pyrometer during wafer processing. In addition to making more accurate temperature measurements, the optical characteristics of the substrate can also be used to better optimize the heating cycle.

Abstract translation: 公开了一种用于确定诸如半导体晶片的衬底的至少一种光学特性的方法和系统。 一旦确定了光学特性，则可以控制处理室中的至少一个参数以改善处理。 例如，在一个实施例中，可以首先在环境温度或接近环境温度下确定衬底的一个表面的反射率。 根据该信息，可以准确地估计在高温处理期间晶片的反射率和/或发射率。 在晶片处理过程中，发射率可用于使用高温计校正温度测量。 除了进行更准确的温度测量之外，基板的光学特性也可用于更好地优化加热循环。

公开(公告)号：US08236706B2

公开(公告)日：2012-08-07

申请号：US12334425

申请日：2008-12-12

Applicant: Bruce W. Peuse ,  Yaozhi Hu ,  Paul Janis Timans ,  Guangcai Xing ,  Wilfried Lerch ,  Sing-Pin Tay ,  Stephen E. Savas ,  Georg Roters ,  Zsolt Nenyei ,  Ashok Sinha

Inventor： Bruce W. Peuse ,  Yaozhi Hu ,  Paul Janis Timans ,  Guangcai Xing ,  Wilfried Lerch ,  Sing-Pin Tay ,  Stephen E. Savas ,  Georg Roters ,  Zsolt Nenyei ,  Ashok Sinha

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/31654 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68771

Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

Abstract translation: 描述了等离子体辅助低温自由基氧化。 除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。 选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。 可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。 通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。