中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

76 records (took 0.027 seconds)

    Topcoat compositions and pattern-forming methods
    23.
    发明授权
    Topcoat compositions and pattern-forming methods 有权

    公开(公告)号：US10042259B2

    公开(公告)日：2018-08-07

    申请号：US15730876

    申请日：2017-10-12

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Irvinder Kaur ,  Cong Liu ,  Doris Kang ,  Mingqi Li ,  Deyan Wang ,  Huaxing Zhou

    IPC: G03F7/11 ,  C08F20/34 ,  C08F222/40 ,  C08L33/16 ,  C09D133/08 ,  C09D133/10 ,  C09D133/16 ,  G03F7/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

    Abstract: Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R1 represents H, F, methyl or fluorinated methyl; R2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR5, wherein R5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

    PATTERN-FORMATION METHODS
    24.
    发明申请
    PATTERN-FORMATION METHODS 审中-公开

    公开(公告)号：US20180188654A1

    公开(公告)日：2018-07-05

    申请号：US15846658

    申请日：2017-12-19

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Kevin Rowell ,  Cong Liu ,  Cheng Bai Xu ,  Irvinder Kaur ,  Xisen Hou ,  Mingqi Li

    IPC: G03F7/40

    Abstract: Pattern-formation methods comprise: (a) providing a substrate; (b) forming a photoresist pattern over the substrate; (c) applying a pattern treatment composition to the photoresist pattern, the pattern treatment composition comprising a solvent mixture comprising a first organic solvent and a second organic solvent, wherein the first organic solvent has a boiling point that is greater than a boiling point of the second organic solvent, and wherein the first organic solvent has a boiling point of 210° C. or more; and (d) thereafter heating the photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

    Pattern trimming methods
    26.
    发明授权
    Pattern trimming methods 有权

    公开(公告)号：US09869933B2

    公开(公告)日：2018-01-16

    申请号：US15062695

    申请日：2016-03-07

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Kevin Rowell ,  Cong Liu ,  Cheng Bai Xu ,  Irvinder Kaur ,  Jong Keun Park

    IPC: G03F7/42 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  G03F7/36 ,  G03F7/20

    CPC classification number: G03F7/425 ,  G03F7/0392 ,  G03F7/16 ,  G03F7/2004 ,  G03F7/36 ,  G03F7/405 ,  H01L21/02057 ,  H01L21/0273 ,  H01L21/0274

    Abstract: Methods of trimming a photoresist pattern comprise: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern trimming composition over the photoresist pattern, wherein the pattern trimming composition comprises a second polymer and a solvent system, wherein the solvent system comprises one or more monoether solvents in a combined amount of 50 wt % or more based on the solvent system; (d) heating the coated semiconductor substrate, thereby causing a change in solubility of a surface region of the photoresist pattern in a rinsing agent to be applied; and (e) contacting the photoresist pattern with a rinsing agent to remove the surface region of the photoresist pattern, thereby forming a trimmed photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

Patent Agency Ranking