公开(公告)号：US20160179407A1

公开(公告)日：2016-06-23

申请号：US14977237

申请日：2015-12-21

Applicant: SanDisk Technologies Inc.

Inventor： Sergey Anatolievich Gorobets ,  Neil Richard Darragh ,  Liam Michael Parker

IPC: G06F3/06 ,  G11C16/28 ,  G11C16/32

CPC classification number: G06F3/0653 ,  G06F3/0625 ,  G06F3/0634 ,  G06F11/008 ,  G06F11/073 ,  G06F11/076 ,  G06F11/079 ,  G06F11/0793 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/12 ,  G11C16/28 ,  G11C16/32 ,  G11C16/3418 ,  G11C16/3422 ,  G11C16/349 ,  G11C16/3495 ,  G11C29/028 ,  G11C29/50004 ,  G11C29/52 ,  G11C29/56008 ,  G11C29/70 ,  G11C2029/5004

Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.

Abstract translation: 存储器系统或闪存卡可以包括用于存储器单元测量和分析的机制，其独立地测量/预测存储器磨损/耐久性，数据保持（DR），读取干扰和/或剩余余量。 可以通过分析单元的各个电压电平的状态分布来独立地量化这些效应。 特别地，可以分析存储器单元的单元电压分布的直方图以识别特定效果的签名（例如，磨损，DR，读取干扰，余量等）。 这些测量可用于块循环，数据丢失预测或对存储器参数的调整。 在适当的时间基于测量的优先行动可能会导致改进的内存管理和数据管理。 该动作可以包括计算存储在存储器中的数据的剩余使用寿命，循环块，预测数据丢失，权衡或动态调整存储器参数。

公开(公告)号：US20160179406A1

公开(公告)日：2016-06-23

申请号：US14977222

申请日：2015-12-21

Applicant: SanDisk Technologies Inc.

Inventor： Sergey Anatolievich Gorobets ,  Neil Richard Darragh ,  Liam Michael Parker

IPC: G06F3/06

CPC classification number: G06F3/0653 ,  G06F3/0625 ,  G06F3/0634 ,  G06F11/008 ,  G06F11/073 ,  G06F11/076 ,  G06F11/079 ,  G06F11/0793 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/12 ,  G11C16/28 ,  G11C16/32 ,  G11C16/3418 ,  G11C16/3422 ,  G11C16/349 ,  G11C16/3495 ,  G11C29/028 ,  G11C29/50004 ,  G11C29/52 ,  G11C29/56008 ,  G11C29/70 ,  G11C2029/5004

Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.

Abstract translation: 存储器系统或闪存卡可以包括用于存储器单元测量和分析的机制，其独立地测量/预测存储器磨损/耐久性，数据保持（DR），读取干扰和/或剩余余量。 可以通过分析单元的各个电压电平的状态分布来独立地量化这些效应。 特别地，可以分析存储器单元的单元电压分布的直方图以识别特定效果的签名（例如，磨损，DR，读取干扰，余量等）。 这些测量可用于块循环，数据丢失预测或对存储器参数的调整。 在适当的时间基于测量的优先行动可能会导致改进的内存管理和数据管理。 该动作可以包括计算存储在存储器中的数据的剩余使用寿命，循环块，预测数据丢失，权衡或动态调整存储器参数。

公开(公告)号：US20160041891A1

公开(公告)日：2016-02-11

申请号：US14454482

申请日：2014-08-07

Applicant: SanDisk Technologies Inc.

Inventor： Ashutosh Malshe ,  Neil Richard Darragh ,  Karthik Krishnamoorthy

IPC: G06F11/20 ,  G06F11/07

CPC classification number: G06F11/2094 ,  G06F11/073 ,  G06F11/076 ,  G06F11/0793 ,  G06F2201/81

Abstract: A method for analyzing a read error event is provided comprising reading a page of data stored in memory, determining a read error event for the page of data, and identifying a scope of the read error event in the memory. In another embodiment, a method for performing a preliminary read error recovery is provided comprising reading a first data unit from memory and identifying a bit error rate for a first data unit with a correction engine, determining that the bit error rate is above a threshold, accessing a data structure including entries identifying data units and read error event information associated with the data units, identifying a second data unit in an entry that matches the first data unit, and performing a preliminary read error recovery process on the first data unit using the information in the entry to reduce the bit error rate below the threshold.

Abstract translation: 提供了一种用于分析读取错误事件的方法，包括读取存储在存储器中的数据页面，确定数据页面的读取错误事件，以及识别存储器中的读取错误事件的范围。 在另一个实施例中，提供了一种用于执行初步读取错误恢复的方法，包括从存储器读取第一数据单元并且利用校正引擎识别第一数据单元的误码率，确定误码率高于阈值， 访问包括标识数据单元的条目和与数据单元相关联的读取错误事件信息的数据结构，识别与第一数据单元匹配的条目中的第二数据单元，以及使用第一数据单元对第一数据单元执行初步读取错误恢复处理 条目中的信息减少了误码率低于阈值。