公开(公告)号：US20130330844A1

公开(公告)日：2013-12-12

申请号：US13909542

申请日：2013-06-04

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

IPC: H01L21/66 ,  H01L21/67 ,  B23K26/00 ,  H01L21/263

CPC classification number: H01L21/324 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/0608 ,  B23K26/0648 ,  B23K26/0736 ,  B23K26/082 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/268 ,  H01L21/67115 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 μs to about 100 μs. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.

Abstract translation: 公开了具有超短停留时间的半导体晶片退火的激光退火系统和方法。 激光退火系统可以包括至少部分重叠的一个或两个激光束。 其中一个激光束是预热激光束，另一个激光束是退火激光束。 退火激光束扫描足够快，使得停留时间在约1μa至约100μA的范围内。 这些超短停留时间对于退火由薄的器件晶片形成的产品晶片是有用的，因为它们防止器件晶片的器件侧在退火过程中被加热而损坏。 还公开了单激光束退火系统和方法的实施例。