Abstract:
According to one embodiment, a MEMS element comprises a first electrode fixed on a substrate, and a second electrode arranged above the first electrode, facing the first electrode, and vertically movable. The second electrode includes a second opening portion that penetrates from an upper surface to a lower surface of the second electrode. The first electrode includes a first opening portion at a position corresponding to at least a part of the second opening portion, the first opening portion penetrating from an upper surface to a lower surface of the first electrode.
Abstract:
A sensor for detecting electromagnetic radiation, having a detection element; and at least one electrode; the detection element and the at least one electrode forming a variable capacitor, and a change in the capacitance of the capacitor being caused by the detected electromagnetic radiation.
Abstract:
A MEMS capacitive device (90) includes a fixed capacitor plate (104) formed on a surface (102) of a substrate (100). A movable capacitor plate (114) is suspended above the fixed capacitor plate (104) by compliant members (116) anchored to the surface (102). A movable element (120) is positioned in spaced apart relationship from the movable capacitor plate (104) and has an actuator (130) formed thereon. Actuation of the actuator (130) causes abutment of a portion of the movable element (120) against a contact surface (136) of the movable plate (114). The abutment moves the movable plate (114) toward the fixed plate (104) to alter a capacitance (112) between the plates (104, 114). Another substrate (118) may be coupled to the substrate (100) such that a surface (126) of the substrate (118) faces the surface (102) of the substrate (100). The movable element (120) may be formed on the surface (126).
Abstract:
A sensor for detecting electromagnetic radiation, having a detection element; and at least one electrode; the detection element and the at least one electrode forming a variable capacitor, and a change in the capacitance of the capacitor being caused by the detected electromagnetic radiation.
Abstract:
Embodiments disclosed herein generally include using a large number of small MEMS devices to replace the function of an individual larger MEMS device or digital variable capacitor. The large number of smaller MEMS devices perform the same function as the larger device, but because of the smaller size, they can be encapsulated in a cavity using complementary metal oxide semiconductor (CMOS) compatible processes. Signal averaging over a large number of the smaller devices allows the accuracy of the array of smaller devices to be equivalent to the larger device. The process is exemplified by considering the use of a MEMS based accelerometer switch array with an integrated analog to digital conversion of the inertial response. The process is also exemplified by considering the use of a MEMS based device structure where the MEMS devices operate in parallel as a digital variable capacitor.
Abstract:
A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.
Abstract:
A MEMS tunable capacitor with angular vertical comb-drive (AVC) actuators is described where high capacitances and a wide continuous tuning range is achieved in a compact space. The comb fingers rotate through a small vertical angle which allows a wider tuning range than in conventional lateral comb drive devices. Fabrication of the device is straightforward, and involves a single deep reactive ion etching step followed by release and out-of-plane assembly of the angular combs.
Abstract:
A method is provided for fabricating a CMOS based micro-electromechanical system (MEMS) integrated circuit. A CMOS circuit layout is fabricated on a silicon substrate. A first thick film photo resist layer is then deposited on the CMOS circuit layout. To prevent oxidation from occurring between aluminum and gold, a seed layer is applied to the first thick film photo resist layer. A mold is then formed by selectively depositing a second thick film photo resist layer on portions of the seed layer so that a conductive layer can be applied to the mold. Portions of the seed layer are then removed and a stress compensation material is applied to the conductive layer. A back side surface of the silicon substrate is then etched to remove areas not covered by a mask, and the first thick film photo resist layer is removed via openings in the CMOS circuit layout.
Abstract:
A microelectromechanical systems (MEMS) sensor, a capacitive MEMS motor sensing circuit and a method are provided. The present application provides a microelectromechanical systems (MEMS) sensor. The MEMS sensor includes a housing having electrical contacts disposed on an exterior of the housing. The MEMS sensor further includes a capacitive MEMS motor disposed in the housing, and an electrical circuit disposed in the housing and being electrically coupled to the electrical contacts. The electrical circuit includes a bias voltage source having an output coupled to an input of the MEMS motor. The electrical circuit further includes a buffer circuit including an amplifier input stage having an input coupled to an output of the MEMS motor. The electrical circuit still further includes a frequency dependent input attenuator including a feedback capacitor and an input attenuator low pass filter, the input attenuator low pass filter having an input coupled to the output of the amplifier input stage and an output coupled to a first terminal of the feedback capacitor, where a second terminal of the feedback capacitor is coupled to the input of the amplifier input stage.
Abstract:
A sensor package can include a substrate including a plurality of layers. The plurality of layers can include a first pair of layers and a second pair of layers different from the first pair of layers. The substrate can have a first side and a second side opposite the first side. The sensor package can include a transducer coupled to the second side of the substrate. The sensor package can include an inductor electrically coupled to the transducer. The inductor can be configured as a single layer trace on an inductor layer within the substrate and disposed between the first pair of layers within the substrate. The first pair of layers can be more distal from the second side of the substrate than the second pair of layers.