MEMS ELEMENT AND METHOD OF MANUFACTURING THE SAME
    21.
    发明申请
    MEMS ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
    MEMS元件及其制造方法

    公开(公告)号:US20130285163A1

    公开(公告)日:2013-10-31

    申请号:US13802520

    申请日:2013-03-13

    CPC classification number: B81B3/0086 B81B2201/0221 H01G5/18

    Abstract: According to one embodiment, a MEMS element comprises a first electrode fixed on a substrate, and a second electrode arranged above the first electrode, facing the first electrode, and vertically movable. The second electrode includes a second opening portion that penetrates from an upper surface to a lower surface of the second electrode. The first electrode includes a first opening portion at a position corresponding to at least a part of the second opening portion, the first opening portion penetrating from an upper surface to a lower surface of the first electrode.

    Abstract translation: 根据一个实施例,MEMS元件包括固定在基板上的第一电极和布置在第一电极之上的面向第一电极并且可垂直移动的第二电极。 第二电极包括从第二电极的上表面到下表面穿透的第二开口部分。 第一电极包括在对应于第二开口部分的至少一部分的位置处的第一开口部分,第一开口部分从第一电极的上表面穿透到下表面。

    MEMS capacitive device and method of forming same
    23.
    发明授权
    MEMS capacitive device and method of forming same 有权
    MEMS电容器件及其形成方法

    公开(公告)号:US08149564B2

    公开(公告)日:2012-04-03

    申请号:US12391083

    申请日:2009-02-23

    Abstract: A MEMS capacitive device (90) includes a fixed capacitor plate (104) formed on a surface (102) of a substrate (100). A movable capacitor plate (114) is suspended above the fixed capacitor plate (104) by compliant members (116) anchored to the surface (102). A movable element (120) is positioned in spaced apart relationship from the movable capacitor plate (104) and has an actuator (130) formed thereon. Actuation of the actuator (130) causes abutment of a portion of the movable element (120) against a contact surface (136) of the movable plate (114). The abutment moves the movable plate (114) toward the fixed plate (104) to alter a capacitance (112) between the plates (104, 114). Another substrate (118) may be coupled to the substrate (100) such that a surface (126) of the substrate (118) faces the surface (102) of the substrate (100). The movable element (120) may be formed on the surface (126).

    Abstract translation: MEMS电容器件(90)包括形成在衬底(100)的表面(102)上的固定电容器板(104)。 可移动电容器板(114)通过锚固到表面(102)的柔性构件(116)悬置在固定电容器板(104)的上方。 可移动元件(120)与可移动电容器板(104)间隔开并且具有形成在其上的致动器(130)。 致动器(130)的致动导致可移动元件(120)的一部分抵靠可动板(114)的接触表面(136)。 抵靠将可移动板(114)移向固定板(104)以改变板(104,114)之间的电容(112)。 衬底(118)可以耦合到衬底(100),使得衬底(118)的表面(126)面向衬底(100)的表面(102)。 可移动元件(120)可以形成在表面(126)上。

    METHOD OF USING A PLURALITY OF SMALLER MEMS DEVICES TO REPLACE A LARGER MEMS DEVICE
    25.
    发明申请
    METHOD OF USING A PLURALITY OF SMALLER MEMS DEVICES TO REPLACE A LARGER MEMS DEVICE 有权
    使用多个小型MEMS器件来替代大型MEMS器件的方法

    公开(公告)号:US20100116632A1

    公开(公告)日:2010-05-13

    申请号:US12614929

    申请日:2009-11-09

    Abstract: Embodiments disclosed herein generally include using a large number of small MEMS devices to replace the function of an individual larger MEMS device or digital variable capacitor. The large number of smaller MEMS devices perform the same function as the larger device, but because of the smaller size, they can be encapsulated in a cavity using complementary metal oxide semiconductor (CMOS) compatible processes. Signal averaging over a large number of the smaller devices allows the accuracy of the array of smaller devices to be equivalent to the larger device. The process is exemplified by considering the use of a MEMS based accelerometer switch array with an integrated analog to digital conversion of the inertial response. The process is also exemplified by considering the use of a MEMS based device structure where the MEMS devices operate in parallel as a digital variable capacitor.

    Abstract translation: 本文公开的实施例通常包括使用大量的小MEMS器件来代替单个更大的MEMS器件或数字可变电容器的功能。 大量较小的MEMS器件具有与较大器件相同的功能,但是由于尺寸较小,因此可以使用互补金属氧化物半导体(CMOS)兼容工艺封装在腔中。 通过大量较小器件的信号平均,允许较小器件阵列的精度等同于较大的器件。 通过考虑使用具有惯性响应的集成模数转换的基于MEMS的加速度计开关阵列来举例说明该过程。 还通过考虑使用MEMS器件结构(其中MEMS器件并行地作为数字可变电容器)来使用该过程。

    ELECTRICAL DEVICE
    26.
    发明申请
    ELECTRICAL DEVICE 有权
    电气设备

    公开(公告)号:US20090188709A1

    公开(公告)日:2009-07-30

    申请号:US12358869

    申请日:2009-01-23

    CPC classification number: B81B7/0038 B81B2201/0221 B81B2203/04 B81C1/00476

    Abstract: A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.

    Abstract translation: 衬底包括功能元件。 绝缘的第一膜形成空腔,其与基板一起存储功能元件,并且包括多个通孔。 绝缘的第二膜覆盖多个通孔,形成在第一膜上,并且具有比第一膜高的透气性。 在第二薄膜上形成绝缘的第三薄膜,其透气度低于第二薄膜。 绝缘的第四膜形成在第三膜上,并且具有大于第三膜的弹性。

    MEMS tunable capacitor based on angular vertical comb drives
    27.
    发明申请
    MEMS tunable capacitor based on angular vertical comb drives 失效
    基于角度垂直梳齿驱动的MEMS可调电容器

    公开(公告)号:US20050013087A1

    公开(公告)日:2005-01-20

    申请号:US10850958

    申请日:2004-05-21

    CPC classification number: H01G5/06 B81B2201/0221 B81B2203/0136 B81C1/00007

    Abstract: A MEMS tunable capacitor with angular vertical comb-drive (AVC) actuators is described where high capacitances and a wide continuous tuning range is achieved in a compact space. The comb fingers rotate through a small vertical angle which allows a wider tuning range than in conventional lateral comb drive devices. Fabrication of the device is straightforward, and involves a single deep reactive ion etching step followed by release and out-of-plane assembly of the angular combs.

    Abstract translation: 描述了具有角度垂直梳驱动(AVC)致动器的MEMS可调谐电容器,其中在紧凑的空间中实现高电容和宽的连续调谐范围。 梳指旋转一个较小的垂直角度,这允许比常规侧梳驱动装置更宽的调谐范围。 该装置的制造是直接的,并涉及单个深反应离子蚀刻步骤,随后释放和平面外组装角梳。

    Method for making CMOS-based monolithic micro electromechanical system (MEMS) integrated circuits and integrated circuits made thereby
    28.
    发明申请
    Method for making CMOS-based monolithic micro electromechanical system (MEMS) integrated circuits and integrated circuits made thereby 审中-公开
    制造基于CMOS的单片微机电系统(MEMS)集成电路和集成电路的方法

    公开(公告)号:US20030104649A1

    公开(公告)日:2003-06-05

    申请号:US10218902

    申请日:2002-08-15

    Abstract: A method is provided for fabricating a CMOS based micro-electromechanical system (MEMS) integrated circuit. A CMOS circuit layout is fabricated on a silicon substrate. A first thick film photo resist layer is then deposited on the CMOS circuit layout. To prevent oxidation from occurring between aluminum and gold, a seed layer is applied to the first thick film photo resist layer. A mold is then formed by selectively depositing a second thick film photo resist layer on portions of the seed layer so that a conductive layer can be applied to the mold. Portions of the seed layer are then removed and a stress compensation material is applied to the conductive layer. A back side surface of the silicon substrate is then etched to remove areas not covered by a mask, and the first thick film photo resist layer is removed via openings in the CMOS circuit layout.

    Abstract translation: 提供了一种用于制造基于CMOS的微机电系统(MEMS)集成电路的方法。 在硅衬底上制造CMOS电路布局。 然后在CMOS电路布局上沉积第一厚膜光致抗蚀剂层。 为了防止在铝和金之间发生氧化,将种子层施加到第一厚膜光致抗蚀剂层。 然后通过在种子层的部分上选择性地沉积第二厚膜光致抗蚀剂层来形成模具,使得可以将导电层施加到模具。 然后去除种子层的一部分,并且将应力补偿材料施加到导电层。 然后蚀刻硅衬底的背侧表面以除去未被掩模覆盖的区域,并且通过CMOS电路布局中的开口去除第一厚膜光致抗蚀剂层。

    Microelectromechanical Systems Sensor with Frequency Dependent Input Attenuator

    公开(公告)号:US20240217810A1

    公开(公告)日:2024-07-04

    申请号:US18090987

    申请日:2022-12-29

    CPC classification number: B81B7/02 H02N1/002 B81B2201/0221

    Abstract: A microelectromechanical systems (MEMS) sensor, a capacitive MEMS motor sensing circuit and a method are provided. The present application provides a microelectromechanical systems (MEMS) sensor. The MEMS sensor includes a housing having electrical contacts disposed on an exterior of the housing. The MEMS sensor further includes a capacitive MEMS motor disposed in the housing, and an electrical circuit disposed in the housing and being electrically coupled to the electrical contacts. The electrical circuit includes a bias voltage source having an output coupled to an input of the MEMS motor. The electrical circuit further includes a buffer circuit including an amplifier input stage having an input coupled to an output of the MEMS motor. The electrical circuit still further includes a frequency dependent input attenuator including a feedback capacitor and an input attenuator low pass filter, the input attenuator low pass filter having an input coupled to the output of the amplifier input stage and an output coupled to a first terminal of the feedback capacitor, where a second terminal of the feedback capacitor is coupled to the input of the amplifier input stage.

    Sensor package including a substrate with an inductor layer

    公开(公告)号:US11912564B2

    公开(公告)日:2024-02-27

    申请号:US16944362

    申请日:2020-07-31

    Abstract: A sensor package can include a substrate including a plurality of layers. The plurality of layers can include a first pair of layers and a second pair of layers different from the first pair of layers. The substrate can have a first side and a second side opposite the first side. The sensor package can include a transducer coupled to the second side of the substrate. The sensor package can include an inductor electrically coupled to the transducer. The inductor can be configured as a single layer trace on an inductor layer within the substrate and disposed between the first pair of layers within the substrate. The first pair of layers can be more distal from the second side of the substrate than the second pair of layers.

Patent Agency Ranking