Method for fabricating nano-scale patterned surfaces
    21.
    发明授权
    Method for fabricating nano-scale patterned surfaces 失效
    制造纳米尺度图案表面的方法

    公开(公告)号:US08288945B2

    公开(公告)日:2012-10-16

    申请号:US12880107

    申请日:2010-09-12

    Abstract: A method for fabrication of substrate having a nano-scale surface roughness is presented. The method comprises: patterning a surface of a substrate to create an array of spaced-apart regions of a light sensitive material; applying a controllable etching to the patterned surface, said controllable etching being of a predetermined duration selected so as to form a pattern with nano-scale features; and removing the light sensitive material, thereby creating a structure with the nano-scale surface roughness. Silanizing such nano-scale roughness surface with hydrophobic molecules results in the creation of super-hydrophobic properties characterized by both a large contact angle and a large tilting angle. Also, deposition of a photo-active material on the nano-scale roughness surface results in a photocathode with enhanced photoemission yield. This method also provides for fabrication of a photocathode insensitive to polarization of incident light.

    Abstract translation: 提出了一种具有纳米级表面粗糙度的基板的制造方法。 该方法包括:图案化基板的表面以产生光敏材料的间隔开的区域的阵列; 对所述图案化表面施加可控制的蚀刻,所述可控蚀刻具有预定的持续时间,以便形成具有纳米尺度特征的图案; 并去除感光材料,从而产生具有纳米级表面粗糙度的结构。 用疏水分子对这样的纳米级粗糙表面进行硅烷化,导致产生了以接触角大和倾斜角大的特征的超疏水特性。 而且,在纳米级粗糙度表面上沉积光活性材料导致光电阴极具有增强的光电转换率。 该方法还提供对入射光的极化不敏感的光电阴极的制造。

    Display device with at least one movable stop element
    22.
    发明授权
    Display device with at least one movable stop element 有权
    具有至少一个可移动止动元件的显示装置

    公开(公告)号:US08270062B2

    公开(公告)日:2012-09-18

    申请号:US12562093

    申请日:2009-09-17

    Abstract: In certain embodiments, a device is provided including a substrate and a plurality of supports over the substrate. The device may further include a mechanical layer having a movable portion and a stationary portion. The stationary portion may disposed over the supports. In certain embodiments, the device further includes a reflective surface positioned over the substrate and mechanically coupled to the movable portion. The device of certain embodiments further includes at least one movable stop element displaced from and mechanically coupled to the movable portion. In certain embodiments, the at least a portion of the stop element may be positioned over the stationary portion.

    Abstract translation: 在某些实施例中,提供了一种包括衬底和在衬底上的多个支撑体的装置。 该装置还可以包括具有可移动部分和固定部分的机械层。 固定部分可以设置在支撑件上方。 在某些实施例中,所述装置还包括位于所述基板上并且机械地联接到所述可移动部分的反射表面。 某些实施例的装置还包括至少一个可动止动元件,该可移动止动元件从可移动部分移动并机械联接到可动部 在某些实施例中,止动元件的至少一部分可以定位在固定部分上方。

    Micromechanical Component and Manufacturing Method
    23.
    发明申请
    Micromechanical Component and Manufacturing Method 有权
    微机械部件和制造方法

    公开(公告)号:US20080315332A1

    公开(公告)日:2008-12-25

    申请号:US12090566

    申请日:2006-11-29

    CPC classification number: B81C1/00984 B81B3/001 B81C2201/115 Y10T428/24355

    Abstract: A micromechanical component has a substrate, a first intermediate layer which is situated thereupon, and a first layer which is situated thereupon and is structured down to the first intermediate layer. A second intermediate layer is situated above the first layer. A second layer is situated on the former, at least one movable micromechanical structure being structured into the second layer. The second intermediate layer is removed in a sacrificial zone beneath the movable micromechanical structure and the first intermediate layer is partially removed in zones beneath the first layer. The movable micromechanical structure is provided with at least one stop surface on a bottom face, this stop surface being contactable with a zone of the first layer which is supported by the first intermediate layer by deflection of the movable micromechanical structure. A method for producing such a micromechanical component is also described.

    Abstract translation: 微机械部件具有衬底,位于其上的第一中间层和位于其上并且被构造成第一中间层的第一层。 第二中间层位于第一层上方。 第二层位于前者上,至少一个可移动微机械结构被构造成第二层。 第二中间层在可移动微机械结构下面的牺牲区域中被去除,并且第一中间层在第一层下面的区域中被部分地去除。 可移动微机械结构在底面上设置有至少一个止动表面,该止动表面可通过可移动微机械结构的偏转而与第一层的区域接触,该区域由第一中间层支撑。 还描述了一种用于制造这种微机械部件的方法。

    Surface roughening process
    24.
    发明申请
    Surface roughening process 有权
    表面粗糙化处理

    公开(公告)号:US20080176381A1

    公开(公告)日:2008-07-24

    申请号:US11827709

    申请日:2007-07-13

    CPC classification number: B81C1/00952 B81B3/001 B81C2201/115

    Abstract: A process of forming a rough interface in a semiconductor substrate. The process includes the steps of depositing a material on a surface of the substrate, forming a zone of irregularities in the material, and forming a rough interface in the semiconductor substrate by a thermal oxidation of the material and a part of the substrate. Additionally, the surface of the oxidized material may be prepared and the surface may be assembled with a second substrate.

    Abstract translation: 在半导体衬底中形成粗糙界面的工艺。 该方法包括以下步骤:在衬底的表面上沉积材料,在材料中形成不规则区域,并通过材料和衬底的一部分的热氧化在半导体衬底中形成粗糙界面。 此外,可以制备氧化材料的表面,并且表面可以与第二衬底组装。

    Surface preparation for selective silicon fusion bonding
    25.
    发明授权
    Surface preparation for selective silicon fusion bonding 失效
    用于选择性硅熔融粘合的表面处理

    公开(公告)号:US07372074B2

    公开(公告)日:2008-05-13

    申请号:US11247700

    申请日:2005-10-11

    CPC classification number: B81B3/001 B81C2201/115 B81C2203/036

    Abstract: An apparatus and method for a silicon-based Micro-Electro Mechanical System (MEMS) device, including a pair of silicon cover structures each having a substantially smooth and planar contact surface formed thereon; a silicon mechanism structure having a part thereof that is movably suspended relative to a relatively stationary frame portion thereof, the frame portion being formed with substantially parallel and spaced-apart smooth and planar contact surfaces; a relatively rough surface disposed between the contact surfaces of the covers and corresponding surfaces of the movable part of the mechanism structure; and wherein the contact surfaces of the cover structures form silicon fusion bond joints with the respective contact surfaces of the mechanism frame.

    Abstract translation: 一种硅基微电子机械系统(MEMS)器件的装置和方法,包括一对硅覆盖结构,每个硅覆盖结构具有形成在其上的基本平滑且平坦的接触表面; 硅机构结构,其一部分相对于其相对固定的框架部分可移动地悬挂,所述框架部分形成有大致平行且间隔开的平滑和平坦的接触表面; 布置在所述盖的接触表面和所述机构结构的可移动部分的对应表面之间的相对粗糙的表面; 并且其中所述覆盖结构的接触表面与所述机构框架的相应接触表面形成硅熔合接合点。

    Surface preparation for selective silicon fusion bonding
    26.
    发明申请
    Surface preparation for selective silicon fusion bonding 失效
    用于选择性硅熔融粘合的表面处理

    公开(公告)号:US20070082420A1

    公开(公告)日:2007-04-12

    申请号:US11247700

    申请日:2005-10-11

    CPC classification number: B81B3/001 B81C2201/115 B81C2203/036

    Abstract: An apparatus and method for a silicon-based Micro-Electro Mechanical System (MEMS) device, including a pair of silicon cover structures each having a substantially smooth and planar contact surface formed thereon; a silicon mechanism structure having a part thereof that is movably suspended relative to a relatively stationary frame portion thereof, the frame portion being formed with substantially parallel and spaced-apart smooth and planar contact surfaces; a relatively rough surface disposed between the contact surfaces of the covers and corresponding surfaces of the movable part of the mechanism structure; and wherein the contact surfaces of the cover structures form silicon fusion bond joints with the respective contact surfaces of the mechanism frame.

    Abstract translation: 一种硅基微电子机械系统(MEMS)器件的装置和方法,包括一对硅覆盖结构,每个硅覆盖结构具有形成在其上的基本平滑且平坦的接触表面; 硅机构结构,其一部分相对于其相对固定的框架部分可移动地悬挂,所述框架部分形成有大致平行且间隔开的平滑和平坦的接触表面; 布置在所述盖的接触表面和所述机构结构的可移动部分的对应表面之间的相对粗糙的表面; 并且其中所述覆盖结构的接触表面与所述机构框架的相应接触表面形成硅熔合接合点。

    Deformable grating apparatus for modulating a light beam and including
means for obviating stiction between grating elements and underlying
substrate
    28.
    发明授权
    Deformable grating apparatus for modulating a light beam and including means for obviating stiction between grating elements and underlying substrate 失效
    用于调制光束的可变形光栅装置,并且包括用于消除光栅元件和下面基板之间的静摩擦的装置

    公开(公告)号:US5459610A

    公开(公告)日:1995-10-17

    申请号:US62688

    申请日:1993-05-20

    Abstract: A modulator for modulating incident rays of light, the modulator comprising a plurality of equally spaced apart beam elements, each of which includes a light reflective planar surface. The elements are arranged parallel to each other with their light reflective surfaces parallel to each other. The modulator includes means for supporting the beam elements in relation to one another and means for moving the beam elements relative to one another so that the beams move between a first configuration wherein the modulator acts to reflect the incident rays of light as a plane mirror, and a second configuration wherein the modulator diffracts the incident rays of light as they are reflected therefrom. At least one of the facing surfaces of the beam elements and underlying substrate is configured to reduce any tendency to stick as they are pulled together. In operation, the light reflective surfaces of the beam elements remain parallel to each other in both the first and the second configurations and the perpendicular spacing between the reflective surfaces of adjacent beam elements is equal to m/4 times the wavelength of the incident rays of light, wherein m=an even whole number or zero when the beam elements are in the first configuration and m=an odd number when the beam elements are in the second configuration.

    Abstract translation: 一种用于调制入射光线的调制器,所述调制器包括多个等间隔开的光束元件,每个光束元件包括光反射平面。 元件彼此平行地布置,其光反射表面彼此平行。 调制器包括用于相对于彼此支撑光束元件的装置和用于相对于彼此移动光束元件的装置,使得光束在第一配置之间移动,其中调制器作为反射作为平面镜的入射光线, 以及第二配置,其中调制器衍射入射的光线,因为它们被反射。 梁元件和下面的基底的至少一个相对表面被配置成减少当它们被拉在一起时粘合的任何倾向。 在操作中,光束元件的光反射表面在第一和第二构造中保持彼此平行,并且相邻光束元件的反射表面之间的垂直间隔等于入射光线的波长的m / 光,其中当波束元素处于第一配置时,m =偶数或零,并且当波束元处于第二配置时m =奇数。

    Modification to rough polysilicon using ion implantation and silicide

    公开(公告)号:US11952267B2

    公开(公告)日:2024-04-09

    申请号:US17584698

    申请日:2022-01-26

    Abstract: A modification to rough polysilicon using ion implantation and silicide is provided herein. A method can comprise depositing a hard mask on a single crystal silicon, patterning the hard mask, and depositing metal on the single crystal silicon. The method also can comprise forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon. Further, the method can comprise removing unreacted metal and stripping the hard mask from the single crystal silicon. Another method can comprise forming a MEMS layer based on fusion bonding a handle MEMS with a device layer. The method also can comprise implanting rough polysilicon on the device layer. Implanting the rough polysilicon can comprise performing ion implantation of the rough polysilicon. Further, the method can comprise performing high temperature annealing. The high temperature can comprise a temperature in a range between around 700 and 1100 degrees Celsius.

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