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    ELECTROMAGNETIC INTERFERENCE PROTECTION STRUCTURE
    21.
    发明申请
    ELECTROMAGNETIC INTERFERENCE PROTECTION STRUCTURE 有权
    电磁干扰保护结构

    公开(公告)号：US20130221219A1

    公开(公告)日：2013-08-29

    申请号：US13404277

    申请日：2012-02-24

    Applicant: Abbas Torabi

    Inventor： Abbas Torabi

    IPC: G01J5/06 ,  H01L31/0232

    CPC classification number: G01J5/06 ,  G01J1/0209 ,  G01J1/0252 ,  G01J1/0488 ,  G01J5/022 ,  G01J5/0285 ,  G01J5/046 ,  G01J5/0862 ,  G01J5/20 ,  G01J2001/448 ,  G01J2005/0077 ,  G01J2005/202 ,  H01L27/14621 ,  H01L27/14649

    Abstract: A detector structure having a sensor for detecting energy impinging on the structure in the infrared and/or optical frequency band; an electronics section disposed behind the sensor for processing electrical signal produced by the sensor in response to the sensor detecting the infrared and/or optical energy; and an electrically conductive layer for inhibiting electromagnetic energy outside of the visible and infrared portions of the spectrum, such electrically conductive layer being disposed between impinging energy and the electronics section, such layer having a transmissivity greater than 90 percent in the visible and infrared portions of the spectrum and being reflective and/or dissipative to portions of the impinging energy outside of the visible and infrared portions of the spectrum. In one embodiment an electrically conductive layer having a substantially constant absorptivity to electromagnetic energy within the visible and infrared portions of the spectrum. In one embodiment, the layer is graphene.

    Abstract translation: 一种检测器结构，具有用于检测冲击在红外线和/或光频带中的结构的能量的传感器; 设置在所述传感器后面的电子部件，用于响应于所述传感器检测所述红外线和/或光能量而处理由所述传感器产生的电信号; 以及用于在光谱的可见光和红外部分之外抑制电磁能的导电层，这种导电层设置在入射能量和电子部分之间，这样的透光率在可见光和红外部分中的透射率大于90％ 光谱并且对于光谱的可见光和红外部分之外的部分冲击能量是反射和/或耗散的。 在一个实施例中，导电层具有对光谱的可见光和红外部分内的电磁能的基本上恒定的吸收性。 在一个实施例中，该层是石墨烯。

    Bolometer element, bolometer cell, bolometer camera and method
    23.
    发明授权
    Bolometer element, bolometer cell, bolometer camera and method 有权
    测辐射热计元件，测辐射热计，测辐射热量计相机和方法

    公开(公告)号：US08063369B2

    公开(公告)日：2011-11-22

    申请号：US12071058

    申请日：2008-02-14

    Applicant: Heikki Seppä ,  Panu Helistö ,  Arttu Luukanen

    Inventor： Heikki Seppä ,  Panu Helistö ,  Arttu Luukanen

    IPC: G01J5/00

    CPC classification number: G01J5/20 ,  G01J5/08 ,  G01J5/0837 ,  G01J5/24 ,  G01J2005/202 ,  G01J2005/208

    Abstract: The invention relates to a bolometer element, a bolometer cell, a bolometer camera, and a method for reading a bolometer cell. The bolometer cell comprises several bolometer elements. Each bolometer element comprises a first bolometer having a first heating resistance for sensing radiation power acting on the element, and a second bolometer having a second heating resistance, and in each bolometer element the first and second bolometers are electrically connected to each other in such a way that the heating resistance (611) of the first bolometer can be biased with the aid of a voltage through the heating resistance of the second bolometer in order to amplify the radiation power detected with the aid of the connection. With the aid of the invention, it is possible to implement an extremely sensitive bolometer camera.

    Abstract translation: 本发明涉及测辐射热计元件，测辐射热计单元，测辐射热量计摄像机和读取测辐射热计单元的方法。 测辐射热计单元包括若干测辐射热计元件。 每个测辐射热计元件包括具有用于感测作用在该元件上的辐射功率的第一加热电阻的第一辐射热计和具有第二加热电阻的第二测辐射热计，并且在每个测辐射热计元件中，第一和第二测辐射热计在彼此电连接 第一测辐射热计的加热电阻（611）借助于通过第二测辐射热计的加热电阻的电压被偏置，以放大借助于连接检测到的辐射功率。 借助于本发明，可以实现极其敏感的测辐射热量计相机。

    Method of manufacturing an image device
    24.
    发明授权
    Method of manufacturing an image device 有权
    制造图像装置的方法

    公开(公告)号：US07172920B2

    公开(公告)日：2007-02-06

    申请号：US11168423

    申请日：2005-06-29

    Applicant: Sumio Ikegawa ,  Kohei Nakayama ,  Hideyuki Funaki ,  Yoshinori Iida ,  Keitaro Shigenaka

    Inventor： Sumio Ikegawa ,  Kohei Nakayama ,  Hideyuki Funaki ,  Yoshinori Iida ,  Keitaro Shigenaka

    IPC: H01L21/00

    CPC classification number: H04N5/33 ,  G01J5/20 ,  G01J5/22 ,  G01J5/24 ,  G01J2005/202 ,  H01L27/16

    Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

    Abstract translation: 成像装置包括选择线，与选择线交叉的第一信号线和设置在与选择线和第一信号线的交叉部分对应的部分处的第一像素，第一像素包括形成在第一信号线上的第一缓冲层 基板，形成在第一缓冲层上的第一测辐射热计薄膜，由经历金属 - 绝缘体转变的化合物制成，并产生第一温度检测信号，形成在基板上的第一开关元件，通过来自选择的选择信号选择 并且将第一温度检测信号提供给第一信号线，以及将第一测辐射热计薄膜的顶表面连接到第一开关元件的金属布线。

    Infrared detector
    26.
    发明授权
    Infrared detector 失效
    红外探测器

    公开(公告)号：US5021663A

    公开(公告)日：1991-06-04

    申请号：US597280

    申请日：1990-10-15

    Applicant: Larry J. Hornbeck

    Inventor： Larry J. Hornbeck

    IPC: G01J5/20 ,  G08B13/19 ,  H01L27/146

    CPC classification number: G01J5/02 ,  G01J5/023 ,  G01J5/20 ,  G08B13/19 ,  H01L27/1467 ,  G01J2005/202

    Abstract: Preferred embodiments include a monolithic uncooled infrared detector array of bolometers fabricated over a silicon substrate (142); the bolometers include a stack (144) of oxide (146) TiN (148), a-Si:H (150), TiN (152), oxide (154) with the TiN forming the infrared absorbers and resistor contacts and the a-Si:H the resistor with a high temperature coefficient of resistivity. The resistor is suspended over the silicon substrate (142) by metal interconnects (154 and 156) and related processing circuitry is formed in the silicon substrate (142) beneath the resistor.

    Abstract translation: 优选实施例包括在硅衬底（142）上制造的测辐射热计的单片非冷却红外探测器阵列; 测辐射热计包括氧化物（146）TiN（148），a-Si：H（150），TiN（152），氧化物（154）的叠层（144），其中TiN形成红外吸收体和电阻器触点， Si：H是具有高电阻率系数的电阻。 电阻器通过金属互连（154和156）悬置在硅衬底（142）上，并且相关的处理电路形成在电阻器下面的硅衬底（142）中。

    Radiation detector arrangements and methods
    27.
    发明授权
    Radiation detector arrangements and methods 失效
    辐射探测器的布置和方法

    公开(公告)号：US4853538A

    公开(公告)日：1989-08-01

    申请号：US224108

    申请日：1988-07-26

    Applicant: John Jackson

    Inventor： John Jackson

    IPC: G01J1/02 ,  G01J5/20 ,  G01J5/22 ,  G01T1/12 ,  H01L31/09

    CPC classification number: G01J5/22 ,  G01J2005/202

    Abstract: Infrared, mm-wave or other radiation (100) is detected with at least one detector element in the form of a temperature-sensitive resistor (1) having a high positive temperature coefficient, e.g. 100 micro-ohm.multidot.cm.multidot.K.sup.-1. A sufficiently high voltage V is applied across the resistor (1) by means of a circuit (Vb,T1) so that, in accordance with the invention, the resistor (1) passes a sufficient current (I) as to raise its temperature by Joule heating to a position at which a further increase in its temperature in response to incident radiation (100) reduces the Joule heating by reducing the current (I), thereby stabilizing the temperature of the resistor (1). This varying current (I) through the resistor (1) is measured (e.g. as a voltage V' by means of a transconductance amplifier A) to provide a signal indicative of the power of the incident radiation (100). The change in the Joule heating produced by a change in the temperature of the resistor (1) at this position is larger (e.g. more than 10 times larger) than a change in power of the incident radiation (100) required to produce that same change in temperature of the resistor (1) in the absence of any change in Joule heating. As a result of this internal stabilization of its temperature due to the changes in Joule heating, the detector element (1) has a short time constant for response, and thermal cross-talk problems do not arise for an array of the detector elements (1) sharing a common body of the resistance material. The resistance material may be, e.g., a semiconducting barium titanate operated around or above ambient temperature, or an oxygen-deficient mixed oxide of barium, copper and yttrium which is superconducting when cooled below its high positive temperature coefficient. The resistor(s) may be mounted on a semiconductor circuit, possibly on a cryogenic cooler.

    ELECTROMAGNETIC WAVE SENSOR
    28.
    发明公开
    ELECTROMAGNETIC WAVE SENSOR 审中-公开

    公开(公告)号：US20240159591A1

    公开(公告)日：2024-05-16

    申请号：US18384630

    申请日：2023-10-27

    Applicant: TDK CORPORATION

    Inventor： Maiko KOKUBO ,  Shinji HARA ,  Naoki OHTA ,  Susumu AOKI ,  Kazuya MAEKAWA ,  Tadao SENRIUCHI ,  Yusuke KIMOTO

    IPC: G01J5/02

    CPC classification number: G01J5/023 ,  G01J2005/202

    Abstract: An electromagnetic wave sensor includes: a first wire which extends in a first direction; a second wire which extends in a second direction different from the first direction; and an electromagnetic wave detector which is electrically connected to the first wire and is electrically connected to the second wire, wherein the second wire is provided so as to leave an interval with respect to the first wire in a third direction orthogonal to the first direction and the second direction, and the second wire is disposed to three-dimensionally intersect the first wire. At least one wire of the first wire and the second wire includes a wide portion, which is wider than an average value of a width of a portion excluding an overlapping portion of the at least one wire, in the overlapping portion in which the first wire and the second wire overlap each other.

    AN INTERFACE CIRCUIT FOR PHOTODETECTORS PROVIDING FULL-FRAME INTEGRATION AND PIXEL-LEVEL DIGITIZATION
    29.
    发明公开
    AN INTERFACE CIRCUIT FOR PHOTODETECTORS PROVIDING FULL-FRAME INTEGRATION AND PIXEL-LEVEL DIGITIZATION 审中-公开

    公开(公告)号：US20240053204A1

    公开(公告)日：2024-02-15

    申请号：US18111233

    申请日：2023-02-17

    Applicant: Nu-Trek, Inc.

    Inventor： Stephen Holden Black ,  Paul Richard Behmen ,  Francisco Tejada

    IPC: G01J5/20 ,  G01R19/00 ,  G01J1/44

    CPC classification number: G01J5/20 ,  G01R19/0038 ,  G01J1/44 ,  G01J2005/202

    Abstract: A photodetector interface circuit is described, residing partially or fully within a unit cell per pixel of an FPA. The interface circuit uses an innovative approach to providing pixel level digitization for full frame integration times while maintaining the ability to use integration capacitors of practical sizes. The technique uses successive charge subtraction, removing charge from an integration capacitor successively, triggered by the charge increasing sufficiently to charge the integrator to a reference level, thereby triggering both charge removal and incrementing a count, until all of the current flowing in the photodetector has been accounted for and the count represents the digitization of the photodetector signal. Various options on how to arrange the digitization elements are also disclosed.

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