公开(公告)号：US20150228371A1

公开(公告)日：2015-08-13

申请号：US14418143

申请日：2013-07-30

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Yeji Kim ,  Masayuki Chikamatsu ,  Reiko Azumi ,  Takeshi Saito ,  Nobutsugu Minami

IPC: H01B1/24 ,  H05K1/03 ,  H05K1/02 ,  B29C71/00 ,  H01B3/30

CPC classification number: H01B1/24 ,  B29C71/0009 ,  B29C2071/0027 ,  B29K2103/04 ,  B29L2007/002 ,  B32B2307/202 ,  B82Y30/00 ,  B82Y40/00 ,  G06F3/041 ,  G06F3/044 ,  G06F3/045 ,  G06F2203/04103 ,  H01B3/30 ,  H01J1/304 ,  H01J9/025 ,  H01L31/1884 ,  H01L51/444 ,  H05K1/0274 ,  H05K1/032 ,  H05K2201/0108 ,  H05K2201/0317 ,  Y02E10/549 ,  Y02P70/521

Abstract: The purpose of the present invention is to provide a carbon nanotube thin film in which carbon nanotubes exist in a uniformly dispersed state, the thickness and light transmittance of the film can be adjusted easily and are uniform, and high electrical conductivity or high semiconductor properties can be achieved. Carbon nanotubes are mixed with an electrically-non-conductive matrix capable of dispersing the carbon nanotubes satisfactorily therein, such as hydroxypropyl cellulose, to prepare a dense ink that is dispersed in a solvent, the ink is prepared into a film having a uniform thickness employing a doctor blade method or a screen printing method, and subsequently the electrically-non-conductive matrix is removed with a solvent or by a photonic curing method or an oxygen plasma treatment. In this manner, a thin film in which the electrical conductivity or semiconductor properties inherent in carbon nanotubes are recovered can be produced.

Abstract translation: 本发明的目的是提供碳纳米管以均匀分散状态存在的碳纳米管薄膜，可以容易地调节膜的厚度和透光率并且均匀，并且高导电性或高半导体性能可以 实现。 将碳纳米管与能够令人满意地将碳纳米管分散在其中的非导电基质如羟丙基纤维素混合以制备分散在溶剂中的致密油墨，将油墨制备成具有均匀厚度的膜，采用 刮刀法或丝网印刷法，随后用溶剂或光子固化法或氧等离子体处理除去非导电性基体。 以这种方式，可以制造其中回收碳纳米管固有的电导率或半导体特性的薄膜。

公开(公告)号：US20150123010A1

公开(公告)日：2015-05-07

申请号：US14536555

申请日：2014-11-07

Applicant: Gregory Hirsch

Inventor： Gregory Hirsch

IPC: G21K5/02

CPC classification number: H01J37/073 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/08 ,  H01J2201/30411 ,  H01J2237/06341 ,  H01J2237/0805

Abstract: A method of producing field emitters having improved brightness and durability relying on the creation of a liquid Taylor cone from electrically conductive materials having high melting points. The method calls for melting the end of a wire substrate with a focused laser beam, while imposing a high positive potential on the material. The resulting molten Taylor cone is subsequently rapidly quenched by cessation of the laser power. Rapid quenching is facilitated in large part by radiative cooling, resulting in structures having characteristics closely matching that of the original liquid Taylor cone. Frozen Taylor cones thus obtained yield desirable tip end forms for field emission sources in electron beam applications. Regeneration of the frozen Taylor cones in-situ is readily accomplished by repeating the initial formation procedures. The high temperature liquid Taylor cones can also be employed as bright ion sources with chemical elements previously considered impractical to implement.

Abstract translation: 一种制造具有改善的亮度和耐久性的场致发射体的方法，其依赖于具有高熔点的导电材料产生液体泰勒锥。 该方法要求用聚焦激光束熔化线基底的端部，同时在材料上施加高的正电位。 随后通过停止激光功率使所得的熔融泰勒锥快速淬火。 在很大程度上通过辐射冷却促进快速淬火，导致具有与原始液体泰勒锥的特征密切相似的特征的结构。 因此获得的冷冻泰勒锥在电子束应用中产生用于场发射源的期望的尖端形式。 通过重复初始形成程序容易地实现冷冻泰勒锥的原位再生。 高温液体泰勒锥也可用作具有以前认为不实际实施的化学元素的明亮离子源。

公开(公告)号：US08986782B2

公开(公告)日：2015-03-24

申请号：US12386915

申请日：2009-04-24

Applicant: Mon-Shu Ho ,  Chih-Pong Huang

Inventor： Mon-Shu Ho ,  Chih-Pong Huang

IPC: B32B5/16 ,  C23C16/00 ,  C23C14/34 ,  C23C14/02 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/02 ,  C23C14/06 ,  H01J1/304 ,  H01J9/02

CPC classification number: C23C14/021 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C23C14/0605 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30465 ,  H01J2201/30469 ,  H01J2329/0452 ,  H01J2329/0455 ,  Y10T428/25 ,  Y10T428/30 ,  Y10T428/31678

Abstract: The present invention provides a method of forming a self-assembly fullerene array on the surface of a substrate, comprising the following steps: (1) providing a substrate; (2) pre-annealing the substrate at a temperature ranging from 200° C. to 1200° C. in a vacuum system; and (3) providing powdered fullerene nanoparticles and depositing them on the surface of the substrate by means of physical vapor deposition technology in the vacuum system, so as to form a self-assembly fullerene array on the surface of the substrate. The present invention also provides a fullerene embedded substrate prepared therefrom, which has excellent field emission properties and can be used as a field emitter for any field emission displays.Finally, the present invention provides a fullerene embedded substrate prepared therefrom, which can be used to substitute for semiconductor carbides as optoelectronic devices and high-temperature, high-power, or high-frequency electric devices.

Abstract translation: 本发明提供一种在基材表面上形成自组装富勒烯阵列的方法，包括以下步骤：（1）提供基材; （2）在真空系统中在200℃至1200℃的温度范围内预处理该衬底; 和（3）提供粉状富勒烯纳米颗粒并通过真空系统中的物理气相沉积技术将其沉积在基板的表面上，从而在基材表面上形成自组装富勒烯阵列。 本发明还提供了由其制备的富勒烯嵌入式基板，其具有优异的场致发射特性，并可用作任何场发射显示器的场发射器。 最后，本发明提供了由其制备的富勒烯嵌入式基板，其可用于代替半导体碳化物作为光电器件和高温，大功率或高频电器件。

公开(公告)号：US20150061487A1

公开(公告)日：2015-03-05

申请号：US14518253

申请日：2014-10-20

Applicant: THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

Inventor： Fred Sharifi ,  MYUNG-GYU KANG ,  HENRI LEZEC

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J1/3044 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  C25F3/02 ,  H01J1/304 ,  H01J1/3046 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/3048 ,  H01J2201/30484 ,  Y10S977/814 ,  Y10S977/888 ,  Y10S977/939

Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

Abstract translation: 描述了能够以与热源相当的水平发射的冷阴极场致发射电子源。 在宏观发射极阵列中证明了在7.5V /μm下超过6A / cm 2的发射。 发射极由具有均匀分布的发射部位的单片和刚性多孔半导体纳米结构组成，并通过允许控制发射特性的室温工艺制造。 这些电子源可用于广泛的应用，包括微波电子学和医学和安全性的x射线成像。

公开(公告)号：US08952605B2

公开(公告)日：2015-02-10

申请号：US14370082

申请日：2013-06-26

Applicant: National Institute for Materials Science

Inventor： Han Zhang ,  Jie Tang ,  Luchang Qin ,  Jinshi Yuan ,  Norio Shinya ,  Yasushi Yamauchi

IPC: H01J29/46 ,  H01J1/304 ,  H01J37/073 ,  H01J37/285

CPC classification number: H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/073 ,  H01J37/285 ,  H01J2201/30411 ,  H01J2201/30492 ,  H01J2237/06341

Abstract: A metal hexaboride nanowire such as LaB6 with the formed metal-terminated (100) plane at the tip has a small work function, and can emit a very narrow electron beam from the (100) plane. In such emitters, contamination occurs in a very short time period, and the output current greatly decreases when used under low temperature. The cold field emitter of the present invention overcomes this problem with a stabilization process that exposes the metal-terminated (100) plane of the tip to hydrogen at low temperature, and can stably operate over extended time periods.

Abstract translation: 具有尖端形成的金属端接（100）面的LaB6等金属六硼化物纳米线具有较小的功函数，并能从（100）面发射非常窄的电子束。 在这样的发射器中，污染发生在非常短的时间段内，当在低温下使用时，输出电流大大降低。 本发明的冷场发射器通过将尖端的金属端接（100）面低温暴露于氢的稳定化处理来克服这个问题，并能够在延长的时间段内稳定地工作。

公开(公告)号：US20150002009A1

公开(公告)日：2015-01-01

申请号：US14370082

申请日：2013-06-26

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Han Zhang ,  Jie Tang ,  Luchang Qin ,  Jinshi Yuan ,  Norio Shinyq ,  Yasushi Yamauchi

IPC: H01J1/304 ,  H01J37/285 ,  H01J37/073

CPC classification number: H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/073 ,  H01J37/285 ,  H01J2201/30411 ,  H01J2201/30492 ,  H01J2237/06341

Abstract: A metal hexaboride nanowire such as LaB6 with the formed metal-terminated (100) plane at the tip has a small work function, and can emit a very narrow electron beam from the (100) plane. In such emitters, contamination occurs in a very short time period, and the output current greatly decreases when used under low temperature. The cold field emitter of the present invention overcomes this problem with a stabilization process that exposes the metal-terminated (100) plane of the tip to hydrogen at low temperature, and can stably operate over extended time periods.

Abstract translation: 具有尖端形成的金属端接（100）面的LaB6等金属六硼化物纳米线具有较小的功函数，并能从（100）面发射非常窄的电子束。 在这样的发射器中，污染发生在非常短的时间段内，当在低温下使用时，输出电流大大降低。 本发明的冷场发射器通过将尖端的金属端接（100）面低温暴露于氢的稳定化处理来克服这个问题，并能够在延长的时间段内稳定地工作。

公开(公告)号：US08917013B2

公开(公告)日：2014-12-23

申请号：US13711982

申请日：2012-12-12

Applicant: Peng Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

Inventor： Peng Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

IPC: H01J9/02 ,  H01J1/304

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J31/123

Abstract: A carbon nanotube field emitter is disclosed. The carbon nanotube field emitter includes an emission portion and a supporting portion. The emission portion and the supporting portion are configured as one piece to form a roll structure. The emission portion includes a first rolled carbon nanotube layer, which includes a number of carbon nanotubes. The supporting portion includes a rolled composite layer, which includes at least one second rolled carbon nanotube layer and a rolled metal layer stacked with each other. Another carbon nanotube field emitter with a number of separated emission tips on the emission portion is also disclosed.

Abstract translation: 公开了一种碳纳米管场发射器。 碳纳米管场发射体包括发射部分和支撑部分。 发射部分和支撑部分被构造为一体以形成辊结构。 发光部包括包含多个碳纳米管的第一卷绕碳纳米管层。 支撑部分包括轧制复合层，其包括彼此堆叠的至少一个第二轧制碳纳米管层和轧制金属层。 还公开了在发射部分上具有多个分离的发射尖端的另一碳纳米管场发射器。

公开(公告)号：US08900029B2

公开(公告)日：2014-12-02

申请号：US13657658

申请日：2012-10-22

Applicant: Peng Liu ,  Shou-Shan Fan

Inventor： Peng Liu ,  Shou-Shan Fan

IPC: H01J9/12 ,  H01J9/04 ,  H01J9/02 ,  H01J1/304 ,  B82Y99/00 ,  B82Y10/00

CPC classification number: H01J9/025 ,  B82Y10/00 ,  B82Y99/00 ,  H01J1/304 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/842 ,  Y10S977/939

Abstract: The present application relates to a method for making a carbon nanotube field emitter. A carbon nanotube film is drawn from the carbon nanotube array by a drawing tool. The carbon nanotube film includes a triangle region. A portion of the carbon nanotube film closed to the drawing tool is treated into a carbon nanotube wire including a vertex of the triangle region. The triangle region is cut from the carbon nanotube film by a laser beam along a cutting line. A distance between the vertex of the triangle region and the cutting line can be in a range from about 10 microns to about 5 millimeters.

Abstract translation: 本申请涉及制造碳纳米管场发射体的方法。 通过绘图工具从碳纳米管阵列中抽出碳纳米管薄膜。 碳纳米管膜包括三角形区域。 将接近于绘图工具的碳纳米管膜的一部分处理成包括三角形区域的顶点的碳纳米管线。 通过沿着切割线的激光束从碳纳米管膜切割三角形区域。 三角形区域的顶点与切割线之间的距离可以在约10微米至约5毫米的范围内。

公开(公告)号：US08852675B2

公开(公告)日：2014-10-07

申请号：US13640374

申请日：2010-04-23

Applicant: Mingjie Zhou ,  Pengrui Shao ,  Wenbo Ma

Inventor： Mingjie Zhou ,  Pengrui Shao ,  Wenbo Ma

IPC: B05D5/12 ,  C01G3/02 ,  C23C18/06 ,  B82Y30/00 ,  H01J1/304 ,  H01J9/02

CPC classification number: C01G3/02 ,  B05D5/12 ,  B82Y30/00 ,  C01P2004/16 ,  C23C18/06 ,  H01J1/304 ,  H01J9/025

Abstract: The disclosure provides a preparation method for copper oxide nanowires including following steps: step 01, a conductive layer as an electrode is prepared on a clean substrate, or a clean substrate with a conductive layer is provided directly. Step 02, copper powder is weighed up, and the copper powder is homogeneously mixed with organic carrier. Step 03, mixture prepared in step 02 is printed onto the clean substrate with a conductive layer. Step 04, the substrate after being processed by step 03 is sintered under atmosphere having oxygen, and finally cooled to obtain copper oxide nanowires. Adhesion between the copper oxide nanowires prepared in the present disclosure and the substrate is excellent, the copper oxide nanowires may substantially prepared uniformly in large area and under low temperature, technology flow of coating is decreased, a cost of manufacture is decreased, such that a promising method for bottleneck of commercialization process of the field emission device is provided.

Abstract translation: 本发明提供了一种氧化铜纳米线的制备方法，包括以下步骤：步骤01，在清洁的基板上制备作为电极的导电层，或者直接提供具有导电层的清洁基板。 步骤02，称量铜粉，并将铜粉与有机载体均匀混合。 步骤03，将步骤02中制备的混合物用导电层印刷在干净的基材上。 步骤04，将通过步骤03处理的基板在具有氧气的气氛下烧结，最后冷却，得到氧化铜纳米线。 本公开制备的氧化铜纳米线与基板之间的粘附性优异，氧化铜纳米线可以在大面积和低温下均匀地均匀地制备，涂层的工艺流程减少，制造成本降低， 提供了现场排放装置商业化流程瓶颈的有前景的方法。

公开(公告)号：US20140285084A1

公开(公告)日：2014-09-25

申请号：US14067668

申请日：2013-10-30

Applicant: ARASH AKHAVAN FOMANI ,  LUIS FERNANDO VELASQUEZ-GARCIA ,  AKINTUNDE IBITAYO AKINWANDE

Inventor： ARASH AKHAVAN FOMANI ,  LUIS FERNANDO VELASQUEZ-GARCIA ,  AKINTUNDE IBITAYO AKINWANDE

IPC: H01J9/02 ,  H01J1/304

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30411 ,  H01L21/00 ,  H01T19/04 ,  H01T23/00

Abstract: Methods for fabrication of self-aligned gated tip arrays are described. The methods are performed on a multilayer structure that includes a substrate, an intermediate layer that includes a dielectric material disposed over at least a portion of the substrate, and at least one gate electrode layer disposed over at least a portion of the intermediate layer. The method includes forming a via through at least a portion of the at least one gate electrode layer. The via through the at least one gate electrode layer defines a gate aperture. The method also includes etching at least a portion of the intermediate layer proximate to the gate aperture such that an emitter structure at least partially surrounded by a trench is formed in the multilayer structure.

Abstract translation: 描述了自对准浇口尖端阵列的制造方法。 该方法在包括衬底，包括设置在衬底的至少一部分上的电介质材料的中间层以及设置在中间层的至少一部分上的至少一个栅电极层的多层结构上进行。 该方法包括通过至少一个栅极电极层的至少一部分形成通孔。 通过至少一个栅极电极层的通孔限定栅极孔径。 该方法还包括蚀刻靠近栅极孔的中间层的至少一部分，使得在多层结构中形成至少部分被沟槽包围的发射极结构。