公开(公告)号：US06262530B1

公开(公告)日：2001-07-17

申请号：US09060359

申请日：1998-04-15

Applicant: Ivan V. Prein

Inventor： Ivan V. Prein

IPC: H01J1304

CPC classification number: H01J21/105 ,  H01J31/127 ,  H01J2201/30423

Abstract: A field emission device includes a non-stabilized special vector electron source having a field emission edge emitter cathode (102), a stabilizing anode (103) and a current stabilizer (104) in electrical circuit of the stabilizing anode (103), a collecting anode (105) and at least one control electrode (106) for controlling emission flow of electrons from the vector electron source to the collecting anode (105).

Abstract translation: 场致发射器件包括在稳定阳极（103）的电路中具有场发射边缘发射极阴极（102），稳定阳极（103）和电流稳定器（104）的非稳定特殊矢量电子源， 阳极（105）和至少一个控制电极（106），用于控制电子从矢量电子源到收集阳极（105）的发射流。

公开(公告)号：US5780960A

公开(公告)日：1998-07-14

申请号：US768551

申请日：1996-12-18

Applicant: Kenneth G. Vickers

Inventor： Kenneth G. Vickers

IPC: H01J1/304 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30423 ,  H01J2329/00

Abstract: An electron emission apparatus comprising a gate emitter 6 formed as a conductive plate having an aperture 22 and an electron emitter structure 30 formed adjacent the aperture, the electron emission structure 30 having a void defining an emission surface.

Abstract translation: 一种电子发射装置，包括形成为具有孔22的导电板的栅极发射极6和邻近孔径形成的电子发射体结构30，电子发射结构30具有限定发射表面的空隙。

公开(公告)号：US5773921A

公开(公告)日：1998-06-30

申请号：US702684

申请日：1996-08-23

Applicant: Till Keesmann ,  Hubert Grosse-Wilde

Inventor： Till Keesmann ,  Hubert Grosse-Wilde

IPC: H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J1/05

CPC classification number: H01J1/3042 ,  B82Y10/00 ,  H01J2201/30423 ,  H01J2201/30469 ,  Y10S977/876 ,  Y10S977/939

Abstract: A field emission cathode device consisting of an electrically conducting material and with a narrow, rod-shaped geometry or a knife edge, to achieve a high amplification of the electric field strength is characterized in that the electron-emitting part of the field emission cathode at least partly has preferred cylindrical host molecules and/or compounds with host compounds and/or cylindrical atomic networks, possibly with end caps with diameters measuring in the nanometer range.

Abstract translation: PCT No.PCT / DE95 / 00221 Sec。 371日期：1996年8月23日 102（e）日期1996年8月23日PCT提交1995年2月22日PCT公布。 出版物WO95 / 23424 PCT 日期1995年8月31日一种由导电材料和狭窄的棒状几何形状或刀刃组成的场发射阴极器件，以实现电场强度的高放大，其特征在于，电子发射部分 场发射阴极至少部分地具有优选的具有主体化合物和/或圆柱形原子网络的圆柱形主体分子和/或化合物，可能具有直径在纳米范围内的端盖。

公开(公告)号：US5751097A

公开(公告)日：1998-05-12

申请号：US789175

申请日：1997-01-24

Applicant: Jack Allan Mandelman ,  Micheal David Potter

Inventor： Jack Allan Mandelman ,  Micheal David Potter

IPC: H01J3/02 ,  H01J1/16 ,  B05D5/12

CPC classification number: H01J3/022 ,  H01J2201/30423

Abstract: Lateral field emission devices ("FEDs") for display elements and methods of fabrication are set forth. The FED includes a thin-film emitter oriented parallel to, and disposed above, a substrate. The FED further includes a columnar shaped anode having a first lateral surface. A phosphor layer is disposed adjacent to the first lateral surface. Specifically, the anode is oriented such that the lateral surface and adjacent phosphor layer are perpendicular to the substrate. The emitter has a tip which is spaced less than the mean free distance of an electron in air from the phosphor layer. Operationally, when a voltage potential is applied between said anode and said emitter, electrons are emitted from the tip of the emitter into the phosphor layer causing the phosphor layer to emit electromagnetic energy. Further specific details of the field emission device, fabrication method, method of operation, and associated display are set forth.

Abstract translation: 阐述了用于显示元件和制造方法的侧面场致发射器件（“FED”）。 FED包括平行于并设置在基板上方的薄膜发射极。 FED还包括具有第一侧表面的柱状阳极。 磷光体层邻近第一侧面设置。 具体地，阳极被定向成使得侧表面和相邻磷光体层垂直于衬底。 发射器具有一个尖端，该尖端的距离小于空气中的电子与荧光体层的平均自由距离。 在工作上，当在所述阳极和所述发射极之间施加电压电位时，电子从发射极的尖端发射到荧光体层中，从而使荧光层发射电磁能。 阐述了场致发射装置，制造方法，操作方法和相关显示器的进一步具体细节。

公开(公告)号：US5736810A

公开(公告)日：1998-04-07

申请号：US641252

申请日：1996-04-30

Applicant: Jack Allan Mandelman ,  Michael David Potter

Inventor： Jack Allan Mandelman ,  Michael David Potter

IPC: H01J3/02 ,  H01J1/16

CPC classification number: H01J3/022 ,  H01J2201/30423

Abstract: Lateral field emission devices ("FEDs") for display elements and methods of fabrication are set forth. The FED includes a thin-film emitter oriented parallel to, and disposed above, a substrate. The FED further includes a columnar shaped anode having a first lateral surface. A phosphor layer is disposed adjacent to the first lateral surface. Specifically, the anode is oriented such that the lateral surface and adjacent phosphor layer are perpendicular to the substrate. The emitter has a tip which is spaced less than the mean free distance of an electron in air from the phosphor layer. Operationally, when a voltage potential is applied between said anode and said emitter, electrons are emitted from the tip of the emitter into the phosphor layer causing the phosphor layer to emit electromagnetic energy. Further specific details of the field emission device, fabrication method, method of operation, and associated display are set forth.

Abstract translation: 阐述了用于显示元件和制造方法的侧面场致发射器件（“FED”）。 FED包括平行于并设置在基板上方的薄膜发射极。 FED还包括具有第一侧表面的柱状阳极。 磷光体层邻近第一侧面设置。 具体地，阳极被定向成使得侧表面和相邻磷光体层垂直于衬底。 发射器具有一个尖端，该尖端的距离小于空气中的电子与荧光体层的平均自由距离。 在工作上，当在所述阳极和所述发射极之间施加电压电位时，电子从发射极的尖端发射到荧光体层中，从而使荧光层发射电磁能。 阐述了场致发射装置，制造方法，操作方法和相关显示器的进一步具体细节。

公开(公告)号：US5721467A

公开(公告)日：1998-02-24

申请号：US707454

申请日：1996-09-04

Applicant: Li Zhang ,  Tadashi Sakai ,  Tomio Ono ,  Takashi Yamauchi

Inventor： Li Zhang ,  Tadashi Sakai ,  Tomio Ono ,  Takashi Yamauchi

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J1/3042 ,  H01J2201/30423

Abstract: A field emission cold cathode is disclosed which comprises a first thin film formed of an emitting material and second thin films differing in composition from the first thin film, wherein the second thin films are superposed one each on the main surfaces of the first thin film to form a laminated structure, the lateral sides of the laminated structure expose the lateral end parts of the first thin film and the second thin films, and the exposed end parts of the first thin film emit electrons under an electric field. A method for the production of the cold cathode is also disclosed.

Abstract translation: 公开了一种场致发射冷阴极，其包括由发光材料形成的第一薄膜和与第一薄膜不同的第二薄膜，其中第二薄膜各自叠置在第一薄膜的主表面上， 形成层叠结构，层叠结构的侧面暴露第一薄膜和第二薄膜的侧端部，并且第一薄膜的暴露端部在电场下发射电子。 还公开了制造冷阴极的方法。

公开(公告)号：US5691600A

公开(公告)日：1997-11-25

申请号：US489017

申请日：1995-06-08

Applicant: Curtis D. Moyer ,  Jeffery A. Whalin ,  Wayne Morrow ,  Steven A. Voight

Inventor： Curtis D. Moyer ,  Jeffery A. Whalin ,  Wayne Morrow ,  Steven A. Voight

IPC: G09F9/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J29/46 ,  H01J31/12 ,  H01J1/66

CPC classification number: H01J9/025 ,  H01J29/467 ,  H01J3/022 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A plurality of edge emitters in a FED array include a plate shaped substrate having parallel, laterally spaced apart grooves formed in a first surface and parallel, laterally spaced apart grooves formed in the opposite surface so that each second groove crosses each first groove at an angle. The combined depths of the grooves is greater than the thickness of the plate substrate so that an opening is formed through the substrate at each point where a second groove crosses a first groove. Gate metal is deposited on the surfaces in the openings and emitter material is deposited on the lands of the first surface to form FED emitters in each opening.

Abstract translation: FED阵列中的多个边缘发射器包括板形基板，该板状基板具有形成在第一表面中的平行的横向间隔开的槽，并且在相对表面中形成平行的横向间隔开的槽，使得每个第二槽以一定角度与每个第一槽交叉 。 槽的组合深度大于板基板的厚度，使得在第二槽与第一槽交叉的每个点处通过基板形成开口。 栅极金属沉积在开口的表面上，发射体材料沉积在第一表面的焊盘上，以在每个开口中形成FED发射体。

公开(公告)号：US5644190A

公开(公告)日：1997-07-01

申请号：US498505

申请日：1995-07-05

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J9/02 ,  H01J31/12 ,  H01J19/24

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A lateral-emitter electron field-emission display device structure incorporates a thin-film emitter having an emitting edge in direct contact with and extending into a non-conducting or very high resistivity phosphor, thereby eliminating the gap between the emitter and the phosphor. Such a gap has been a part of all field-emission display devices in the prior art. The ultra-thin-film lateral emitter of the new structure is deposited in a plane parallel to the device's substrate and has an inherently small radius of curvature at its emitting edge. A fabrication process specially adapted to make the new structure includes a directional trench etch, which both defines the emitting edge and provides an opening to receive a non-conducting phosphor. This phosphor covers an anode and is automatically aligned in contact with the emitter edge. When an electrical bias voltage is applied between the emitter and anode, electrons are injected directly into the phosphor material from the emitter edge, exciting cathodoluminescence in the phosphor to emit light which is visible in a wide range of viewing angles. With minor variations in the fabrication process, a lateral-emitter electron field emission display device may be made with an extremely small emitter-phosphor gap, having a width less than 100 times the thickness of the ultra-thin emitter. Embodiments in which the gap width is zero are characterized as edge-contact light-emitting diodes (or triodes or tetrodes if they include control electrodes).

Abstract translation: 横向发射极电子场发射显示器件结构包括具有与非导电或非常高电阻率的磷光体直接接触并延伸到非导电或非常高电阻率的磷光体中的发射边缘的薄膜发射器，从而消除了发射极和磷光体之间的间隙。 这样的间隙已经是现有技术中的所有场致发射显示装置的一部分。 新结构的超薄膜横向发射体沉积在平行于器件的衬底的平面中，并且在其发射边缘处具有固有的小的曲率半径。 专门用于制造新结构的制造工艺包括定向沟槽蚀刻，其定义了发射边缘并且提供用于接收非导电磷光体的开口。 该荧光体覆盖阳极并自动对准与发射极边缘接触。 当在发射极和阳极之间施加电偏压时，电子从发射极边缘直接注入到荧光体材料中，激发荧光体中的阴极发光，发射在宽视角范围内可见的光。 在制造工艺中有微小变化的情况下，横向发射极电子场发射显示装置可以制造成具有极小的发射 - 磷光体间隙，其宽度小于超薄发射极的厚度的100倍。 间隙宽度为零的实施例的特征在于边缘接触式发光二极管（或三极管或四极管，如果它们包括控制电极）。

公开(公告)号：US5382185A

公开(公告)日：1995-01-17

申请号：US40944

申请日：1993-03-31

Applicant: Henry F. Gray ,  David S. Y. Hsu

Inventor： Henry F. Gray ,  David S. Y. Hsu

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30423 ,  H01J2201/319

Abstract: Thin-film edge field emitter devices are provided which are capable of low voltage operation. The method of manufacture of the devices takes advantage of chemical beam deposition and other thin-film fabrication techniques. Both gated and ungated devices are provided and all of the devices include a plurality of thin-films deposited on the side-wall of a non-flat substrate. The gated emitter devices include alternating conductive and electrically insulating layers, and upper parts of the latter are removed to expose the upper edges of the conductive layers, with a central one of these conductive layers comprising an emitter for emitting electrons. The emitter devices can be inexpensively produced with a high degree of precision and reproducibility without the need for expensive lithographic machines. The devices can be used in field emitter arrays employed as vacuum transistors, vacuum microelectronic analog and digital devices, and modulated or cold electron sources.

Abstract translation: 提供能够进行低电压操作的薄膜边缘场发射极器件。 该装置的制造方法利用化学束沉积和其它薄膜制造技术。 提供了门控和非门装置，并且所有装置都包括沉积在非平板基板的侧壁上的多个薄膜。 门控发射极器件包括交替的导电和电绝缘层，并且去除其上部，以暴露导电层的上边缘，这些导电层中的一个包括用于发射电子的发射极。 发射极器件可以以高精度和重现性廉价地生产，而不需要昂贵的光刻机。 这些器件可用于作为真空晶体管的真空发射极阵列，真空微电子模拟和数字器件以及调制或冷电子源。

公开(公告)号：US20120091881A1

公开(公告)日：2012-04-19

申请号：US13252001

申请日：2011-10-03

Applicant: Eiji Ozaki ,  Taiko Motoi ,  Ryoji Fujiwara ,  Akiko Kitao

Inventor： Eiji Ozaki ,  Taiko Motoi ,  Ryoji Fujiwara ,  Akiko Kitao

IPC: H01J19/24 ,  H01J1/304

CPC classification number: H01J29/467 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/4608

Abstract: The present invention provides an electron emitting device that includes a cathode, and a gate onto which electrons field-emitted from the cathode are irradiated. The gate includes at least a layer containing molybdenum and oxygen provided at a portion onto which the electrons field-emitted from the cathode are irradiated. The layer has peaks in a range of 397 eV through 401 eV, a range of 414 eV through 418 eV, a range of 534 eV through 538 eV, and a range of 540 eV through 547 eV, respectively, in a spectrum measured by electron energy loss spectroscopy using a transmission electron microscope.

Abstract translation: 本发明提供一种电子发射器件，其包括阴极和从阴极发射的电子被照射到其上的栅极。 栅极包括至少一层含有钼和氧的层，其设置在从阴极发射的电子被照射的部分上。 该层在通过电子测量的光谱中分别具有在397eV至401eV的范围内的峰值，414eV至418eV的范围，534eV至538eV的范围以及540eV至547eV的范围内的峰值 使用透射电子显微镜的能量损失光谱。