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公开(公告)号：US07902760B2
公开(公告)日：2011-03-08
申请号：US11631487
申请日：2005-06-24
Applicant: Nobuyasu Negishi , Kazuto Sakemura , Takamasa Yoshikawa , Kiyohide Ogasawara
Inventor： Nobuyasu Negishi , Kazuto Sakemura , Takamasa Yoshikawa , Kiyohide Ogasawara
CPC classification number: H01J1/312 , B82Y10/00 , G09G3/22 , G09G2320/043 , H01J29/96 , H01J31/127 , H01J2201/3125 , H01J2329/0484 , H01J2329/96
Abstract: Provided is a method of driving an electron emission apparatus that drives the apparatus including a plurality of electron emission devices each having an electron supply layer formed of silicon, a silicon-based mixture or a compound thereof, an insulator layer formed on the electron supply layer and a thin film metal electrode formed on the insulator layer. The plurality of electron emission devices are sealed and the method includes: a driving step for supplying power between the electron supply layer and the thin film metal electrode to cause electrons to be emitted from the electron emission device and a reactivating step for applying a reactivating voltage at a level equal to or higher than an applied voltage value which causes discontinuity in differential value of the device current flowing between the electron supply layer and the thin film metal electrode with respect to the applied voltage.
Abstract translation: 提供一种驱动电子发射装置的方法，该电子发射装置包括多个电子发射装置，每个电子发射装置具有由硅形成的电子供体层，硅基混合物或其化合物，形成在电子供给层上的绝缘体层 以及形成在绝缘体层上的薄膜金属电极。 多个电子发射器件被密封，并且该方法包括：驱动步骤，用于在电子供给层和薄膜金属电极之间提供电力，以使电子从电子发射器件发射;以及再生步骤， 在等于或高于施加的电压值的水平，其引起在施加的电压下在电子供给层和薄膜金属电极之间流动的器件电流的差分值的不连续性。
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22.发明申请ELECTRON EMITTING ELEMENT, ELECTRON EMITTING DEVICE, LIGHT EMITTING DEVICE, IMAGE DISPLAY DEVICE, COOLING DEVICE, AND CHARGING DEVICE 有权电子发射元件，电子发射装置，发光装置，图像显示装置，冷却装置和充电装置公开(公告)号：US20100196050A1
公开(公告)日：2010-08-05
申请号：US12699349
申请日：2010-02-03
Applicant: Tadashi Iwamatsu , Ayae Nagaoka , Hiroyuki Hirakawa , Yasuo Imura
Inventor： Tadashi Iwamatsu , Ayae Nagaoka , Hiroyuki Hirakawa , Yasuo Imura
CPC classification number: G03G15/02 , B82Y10/00 , H01J1/312 , H01J9/022 , H01J31/127 , H01J2201/312 , H01J2201/3125 , H05B33/08
Abstract: An electron emitting element of the present invention includes an electron acceleration layer provided between an electrode substrate and a thin-film electrode, which electron acceleration layer includes (a) conductive fine particles and (b) insulating fine particles having an average particle diameter greater than that of the conductive fine particles. The electron emitting element satisfies the following relational expression: 0.3x+3.9≦y≦75, where x (nm) is an average particle diameter of the insulating fine particles, and y (nm) is a thickness of the thin-film electrode 3. Such a configuration allows modification of the thickness of the thin-film electrode with respect to the size of the insulating particles, thereby ensuring electrical conduction and allowing sufficient current to flow inside the element. As a result, stable emission of ballistic electrons from the thin-film electrode is possible.
Abstract translation: 本发明的电子发射元件包括设置在电极基板和薄膜电极之间的电子加速层，该电子加速层包括（a）导电细颗粒和（b）绝缘平均粒径大于 导电细颗粒的。 电子发射元件满足以下关系式：0.3x + 3.9＆nlE; y＆nlE; 75，其中x（nm）是绝缘细颗粒的平均粒径，y（nm）是薄膜电极的厚度 这样的结构允许相对于绝缘颗粒的尺寸修改薄膜电极的厚度，从而确保导电并允许足够的电流在元件内部流动。 结果，可以从薄膜电极稳定地发射弹道电子。
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公开(公告)号：US20070138940A1
公开(公告)日：2007-06-21
申请号：US11543848
申请日：2006-10-06
Applicant: Chang-wook Moon , Sang-mock Lee , El Mostafa Bourim , Seung-woon Lee , Eun-hong Lee , Choong-rae Cho
Inventor： Chang-wook Moon , Sang-mock Lee , El Mostafa Bourim , Seung-woon Lee , Eun-hong Lee , Choong-rae Cho
CPC classification number: H01J1/312 , B82Y10/00 , H01J29/04 , H01J31/127 , H01J2201/3125
Abstract: Provided are a surface electron emission device and a display device having the same. The surface electron emission device may include a lower electrode, an insulating layer, and an upper electrode sequentially stacked, and a nano structure layer formed on the upper electrode.
Abstract translation: 提供一种表面电子发射装置和具有该表面电子发射装置的显示装置。 表面电子发射器件可以包括顺序堆叠的下电极，绝缘层和上电极，以及形成在上电极上的纳米结构层。
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公开(公告)号：US20060290255A1
公开(公告)日：2006-12-28
申请号：US11471938
申请日：2006-06-21
Applicant: Hirofumi Yamaguchi , Kei Sato
Inventor： Hirofumi Yamaguchi , Kei Sato
IPC: H01J9/02
CPC classification number: H01J1/32 , H01J1/312 , H01J2201/3125
Abstract: A dielectric-film-type electron emitter includes an emitter section, a first electrode, and a second electrode. The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.
Abstract translation: 电介质膜型电子发射器包括发射极部分，第一电极和第二电极。 发射极部分由多晶电介质材料的薄层形成。 构成发射极部的介电材料由具有高机械品质因数（Qm）的材料形成。 具体地说，介电材料的Qm高于所谓的低Qm材料（Qm为100以下的材料）。 电介质材料的Qm优选为300以上，更优选为500以上。
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公开(公告)号：US20060284540A1
公开(公告)日：2006-12-21
申请号：US11453331
申请日：2006-06-15
Applicant: Toshiaki Kusunoki , Masakazu Sagawa , Kazutaka Tsuji , Tatsumi Hirano , Etsuko Nishimura , Yoshiro Mikami , Yoshiyuki Kaneko , Tomoki Nakamura , Katsuhide Aoto
Inventor： Toshiaki Kusunoki , Masakazu Sagawa , Kazutaka Tsuji , Tatsumi Hirano , Etsuko Nishimura , Yoshiro Mikami , Yoshiyuki Kaneko , Tomoki Nakamura , Katsuhide Aoto
CPC classification number: H01J29/481 , B82Y10/00 , H01J2201/30446 , H01J2201/3125
Abstract: An object of the invention is to provide a thin-film cathode having a base electrode, an upper electrode and an electron accelerator disposed therebetween and made of an insulator or a semiconductor, wherein a diode current rises with a lower threshold voltage that that in the background art, so that a diode current required for electron emission can be secured with a low voltage, and to obtain an image display device long in life and low in power consumption. Platinum-group metal (Group VIII), noble metal belonging to Group Ib, or a laminated film, a mixed film or an alloy film of those materials containing an alkali metal oxide, an alkaline earth metal compound or a compound of transition metal belonging to Group III to VII from the interface with an electron accelerator to the surface is used as an upper electrode.
Abstract translation: 本发明的目的是提供一种具有设置在其间并由绝缘体或半导体制成的基极，上电极和电子加速器的薄膜阴极，其中二极管电流以较低的阈值电压上升， 因此能够以低电压确保电子发射所需的二极管电流，并获得寿命长且功耗低的图像显示装置。 铂族金属（VIII族），属于Ib族的贵金属或层合膜，混合膜或含有碱金属氧化物，碱土金属化合物或过渡金属化合物的合金膜属于 从与电子加速器到表面的界面的III至VII族用作上电极。
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Patent Agency Ranking
公开(公告)号：US20060205103A1
公开(公告)日：2006-09-14
申请号：US11213748
申请日：2005-08-30
Applicant: Takuo Tamura , Hiroshi Kikuchi , Yasushi Sano , Masakazu Sagawa , Yoshiro Mikami
Inventor： Takuo Tamura , Hiroshi Kikuchi , Yasushi Sano , Masakazu Sagawa , Yoshiro Mikami
CPC classification number: H01L27/1214 , B82Y10/00 , H01J9/022 , H01J9/50 , H01J2201/3125 , Y02W30/828
Abstract: For inhibiting generation of pixels that could not be displayed in a line in a display screen of an electron emission display comprising the pixels each provided with an electron source in which a first electrode at a signal line side and a second electrode at a scanning line side are joined through an isolating layer (electron acceleration layer), the present invention cuts off continuity between the first electrode and the second electrode which are short-circuited caused by a defect, so that the electron source with the defect is isolated from other electron sources. In the electron source with a defect, for example, a portion of the second electrode surrounding the above-mentioned defect thereof is excised by laser.
Abstract translation: 为了抑制在电子发射显示器的显示屏幕中不能显示的像素的产生，该电子发射显示器包括每个设有电子源的像素，其中信号线侧的第一电极和扫描线侧的第二电极 通过隔离层（电子加速层）接合，本发明切断由缺陷引起的短路的第一电极和第二电极之间的连续性，使得具有缺陷的电子源与其他电子源隔离 。 在具有缺陷的电子源中，例如，通过激光切除围绕上述缺陷的第二电极的一部分。
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公开(公告)号：US20050110001A9
公开(公告)日：2005-05-26
申请号：US10263055
申请日：2002-10-01
Applicant: Zhizhang Chen , Sriram Ramamoorthi , Hung Liao , Paul Benning , Alexander Govyadinov
Inventor： Zhizhang Chen , Sriram Ramamoorthi , Hung Liao , Paul Benning , Alexander Govyadinov
CPC classification number: H01J1/312 , B82Y10/00 , H01J9/022 , H01J2201/3125
Abstract: An emitter has an electron supply and a porous cathode layer having nanohole openings. The emitter also has a tunneling layer disposed between the electron supply and the cathode layer.
Abstract translation: 发射极具有电子供体和具有纳米孔开口的多孔阴极层。 发射极还具有设置在电子源和阴极层之间的隧穿层。
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公开(公告)号：US20050094429A1
公开(公告)日：2005-05-05
申请号：US11004868
申请日：2004-12-07
Applicant: Masakazu Sagawa , Mutsumi Suzuki , Toshiaki Kusunoki
Inventor： Masakazu Sagawa , Mutsumi Suzuki , Toshiaki Kusunoki
Abstract: A display having hot electron type electron sources displaying an image by a line sequential scanning scheme is provided to prevent poor brightness uniformity along scan lines. The hot electron type electron source is provided with a top electrode bus line serving as a scan line and a bottom electrode bus line serving as a data line. The top electrode bus line has a sheet resistance lower than that of the bottom electrode. The wire sheet resistance of the scam line can be reduced to several m/square. When forming a 40 inch large screen FED using the hot electron type electron sources, a voltage drop amount produced in the scan line can be suppressed below an allowable range. As a result, high quality image without poor brightness uniformity can be obtained.
Abstract translation: 提供具有通过行顺序扫描方式显示图像的热电子型电子源的显示器，以防止沿着扫描线的亮度均匀性差。 热电子型电子源设置有用作扫描线的顶部电极总线和用作数据线的底部电极总线。 顶部电极母线具有低于底部电极的薄层电阻。 欺诈线的电线电阻可以减小到几米/平方。 当使用热电子型电子源形成40英寸大屏幕FED时，可以将在扫描线上产生的电压降量抑制在允许范围以下。 结果，可以获得没有差的亮度均匀性的高质量图像。
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公开(公告)号：US20050073232A1
公开(公告)日：2005-04-07
申请号：US10678958
申请日：2003-10-03
Applicant: Yukihisa Takeuchi , Tsutomu Nanataki , Iwao Ohwada
Inventor： Yukihisa Takeuchi , Tsutomu Nanataki , Iwao Ohwada
CPC classification number: H01J1/312 , B82Y10/00 , G09G3/22 , H01J31/127 , H01J2201/3125
Abstract: An electron emitter includes an emitter element made of a dielectric material, and an upper electrode and a lower electrode. A drive voltage is applied between the upper electrode and the lower electrode for emitting electrons from the emitter element. The upper electrode is formed on an upper surface of the emitter element, and the lower electrode is formed on a lower surface of the emitter element. The emitter element is exposed through a plurality of through regions of the upper electrode. Peripheral surfaces around the through regions facing the emitter element are spaced from the emitter element.
Abstract translation: 电子发射器包括由电介质材料制成的发射极元件，以及上电极和下电极。 在上电极和下电极之间施加驱动电压，用于从发射极元件发射电子。 上电极形成在发射体元件的上表面上，下电极形成在发射体元件的下表面上。 发射极元件通过上电极的多个通过区域露出。 围绕发射体元件的通过区域的周边表面与发射体元件间隔开。
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公开(公告)号：US20030197457A1
公开(公告)日：2003-10-23
申请号：US10438070
申请日：2003-05-15
Applicant: MATSUSHITA ELECTRIC WORKS, LTD.
Inventor： Takuya Komoda , Tsutomu Ichihara , Koichi Aizawa , Nobuyoshi Koshida
IPC: H01J001/00
CPC classification number: B82Y10/00 , H01J1/312 , H01J9/025 , H01J2201/3125 , Y10S977/939
Abstract: There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region 161.
Abstract translation: 以低成本提供了以高稳定性和高效率发射电子的场致发射电子源及其制造方法。 在场发射电子源中，在其主表面上的n型硅衬底上形成强电场漂移部分106，并且在强电场漂移部分106上形成由金薄膜制成的表面电极107。 并且欧姆电极2形成在n型硅衬底101的背面上。在该场发射电子源110中，当表面电极107设置在真空中并且向表面电极107施加直流电压时 相对于n型硅衬底101（欧姆电极2）具有正极性，从n型硅衬底101注入的电子在强电场漂移部106中漂移，并通过表面电极107发射。 强电场漂移部106包括漂移区域161，该漂移区域161在与n型硅衬底1的厚度方向成直角的网状结构中具有横截面， 以及散热区域162，其被填充在网孔的空隙中，并且具有比漂移区域161高的导热性。
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