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    Thermionic electric converters
    2.
    发明授权
    Thermionic electric converters 失效
    热电转换器

    公开(公告)号：US5942834A

    公开(公告)日：1999-08-24

    申请号：US967026

    申请日：1997-11-10

    Applicant: Edwin D. Davis

    Inventor： Edwin D. Davis

    IPC: H01J19/08 ,  H01J19/38 ,  H01J21/06 ,  H01J45/00 ,  H02N3/00

    CPC classification number: H01J45/00

    Abstract: An improved thermionic electric converter uses a wire grid cathode to provide a larger surface area for electrons to boil off. Alternately or additionally, the larger electron emission surface area can be achieved by using a curved electron emission surface. A laser provides quantum interference to electrons just before they reach the anode, thereby lowering their energy levels such that they more readily are captured by the anode. The arrangement provides improved conversion efficiency and reduced electron scatter.

    Abstract translation: 改进的热电转换器使用线栅阴极为电子提供较大的表面积以使其沸腾。 替代地或另外地，可以通过使用弯曲的电子发射表面来实现较大的电子发射表面积。 激光在它们到达阳极之前对电子提供量子干涉，从而降低它们的能级，使得它们更容易被阳极俘获。 该装置提供改进的转换效率和减少的电子散射。

    Method of producing micro vacuum tube having cold emitter
    3.
    发明授权
    Method of producing micro vacuum tube having cold emitter 失效
    具有冷发射器的微型真空管的制造方法

    公开(公告)号：US5727976A

    公开(公告)日：1998-03-17

    申请号：US404277

    申请日：1995-03-14

    Applicant: Masayuki Nakamoto ,  Tomio Ono

    Inventor： Masayuki Nakamoto ,  Tomio Ono

    IPC: H01J1/304 ,  H01J9/02 ,  H01J19/24 ,  H01J21/06 ,  H01J21/10

    CPC classification number: H01J21/105 ,  H01J9/025

    Abstract: In a method for producing a micro vacuum tube, a dent and an etching stopper layer are formed on one surface of a mold substrate. An emitter layer is deposited on the etching stopper layer and the mold substrate is removed so that the emitter layer has a protuberance covered with the etching stopper layer. Further, a gate electrode layer is formed on the etching stopper layer and the gate electrode layer and the etching stopper layer covering a tip of the protuberance is removed. An interposed insulator layer is formed on the gate electrode layer and the tip of the protuberance and an anode electrode layer is formed on the interposed insulator layer. The interposed insulator layer between the tip of the protuberance and the anode electrode layer is removed so that a space is formed between the tip and the anode electrode layer.

    Abstract translation: 在微型真空管的制造方法中，在模具基板的一个面上形成凹陷和蚀刻阻挡层。 在蚀刻停止层上沉积发射极层，去除模具基板，使得发射极层具有被蚀刻阻挡层覆盖的突起。 此外，在蚀刻阻挡层上形成栅电极层，去除覆盖突起前端的栅电极层和蚀刻停止层。 在栅电极层上形成插入的绝缘体层，并且在插入的绝缘体层上形成突起的顶端和阳极电极层。 去除突起前端和阳极电极层之间的插入的绝缘体层，使得在尖端和阳极电极层之间形成空间。

    Vacuum transistor having an optical gate
    4.
    发明授权
    Vacuum transistor having an optical gate 失效
    具有光栅的真空晶体管

    公开(公告)号：US5389796A

    公开(公告)日：1995-02-14

    申请号：US171408

    申请日：1993-12-22

    Applicant: Sung-Weon Kang ,  Jin-Yeong Kang

    Inventor： Sung-Weon Kang ,  Jin-Yeong Kang

    IPC: H01J21/06 ,  H01J1/34 ,  H01J9/12 ,  H01J17/06 ,  H01J19/24 ,  H01J21/04 ,  H01J40/16 ,  H01L21/331 ,  H01L31/12 ,  H01L29/06

    CPC classification number: H01J1/34 ,  H01J17/066 ,  H01J21/04

    Abstract: A vacuum transistor having an optical gate in which an optical signal is radiated from the optical gate. The transistor has a silicon substrate; an insulating layer deposited on said silicon substrate, the insulating layer having a recess portion formed by an etching method; an optical source for radiating the optical signal and serving as said optical gate; and two electrodes formed on said insulating layer and separated from each other under a vacuum or an atmosphere. One of the electrodes receives the optical signal and is an electron emitting electrode for emitting electrons, and the other electrode is an electron collecting electrode for collecting the electrons emitted from said electron emitting electrode. The electron emitting electrode is formed beneath said optical source under a vacuum or an atmosphere and is connected to ground; and said electron collecting electrode is connected to a power source. The amount of current flowing in said electron collecting electrode may be adjusted by the intensity of the optical signal from said optical source. The mobility of electrons between the electron emitting electrode and the electron collecting electrode is further improved owing to a vacuum state or an atmosphere state of the electron transferring path.

    Abstract translation: 一种具有光栅的真空晶体管，其中光信号从光栅辐射。 晶体管具有硅衬底; 沉积在所述硅衬底上的绝缘层，所述绝缘层具有通过蚀刻方法形成的凹部; 用于辐射光信号并用作所述光栅的光源; 以及形成在所述绝缘层上并在真空或大气中彼此分离的两个电极。 一个电极接收光信号，并且是用于发射电子的电子发射电极，另一个电极是用于收集从所述电子发射电极发射的电子的电子收集电极。 电子发射电极在真空或大气下在所述光源下面形成并连接到地面; 并且所述电子收集电极连接到电源。 可以通过来自所述光源的光信号的强度来调节在所述电子收集电极中流动的电流量。 由于电子传输路径的真空状态或气氛状态，电子发射电极和电子收集电极之间的电子迁移率进一步提高。

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