公开(公告)号：US3902095A

公开(公告)日：1975-08-26

申请号：US40452173

申请日：1973-10-09

Applicant: RAYTHEON CO

Inventor： BIERIG ROBERT W ,  MOZZI ROBERT L

IPC: H01J29/44 ,  H01J31/00

CPC classification number: H01J31/00 ,  H01J29/44 ,  Y10S257/926

Abstract: An improved electron bombardment semiconductor diode and amplifying tube employing shielding of the diode junction. A metallic shield is provided around the areas of the semiconductor diode junction exposed to the incoming electron beam. Incoming electrons are thereby prevented from striking the periphery and depletion region of the diode and hence surface and bulk charging effects are eliminated. The maximum reverse bias voltage is hence increased thereby increasing the maximum possible power output from tubes employing such diodes. An arrangement is disclosed for interconnection of a plurality of such diodes such that the capacitance between electrodes is substantially reduced and the frequency response of the device is correspondingly increased.

公开(公告)号：US2615128A

公开(公告)日：1952-10-21

申请号：US12261349

申请日：1949-10-21

Applicant: MARTIN RUDERFER

Inventor： MARTIN RUDERFER

IPC: G11C11/23 ,  G21K1/093 ,  H01J31/00 ,  H01J49/30

CPC classification number: H01J49/30 ,  G11C11/23 ,  G21K1/093 ,  H01J31/00

公开(公告)号：US09455133B2

公开(公告)日：2016-09-27

申请号：US13854910

申请日：2013-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki Denpoh ,  Peter L G Ventzek ,  Lin Xu ,  Lee Chen

IPC: H01L21/02 ,  H01J31/00 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509

CPC classification number: H01L21/02 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  H01J31/00 ,  H01J37/3244 ,  H01J37/32596

Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.

公开(公告)号：US20150144800A1

公开(公告)日：2015-05-28

申请号：US14412754

申请日：2013-03-12

Applicant: LIMO Patentverwaltung GmbH & Co. KG

Inventor： Vitalij Lissotschenko

IPC: H01J29/70 ,  H01J29/48 ,  H01J29/04 ,  H01J31/00

CPC classification number: H01J29/70 ,  H01J3/30 ,  H01J29/04 ,  H01J29/48 ,  H01J31/00 ,  H01J37/06 ,  H01J37/147 ,  H01J37/15 ,  H01J37/305 ,  H01J2237/0213 ,  H01J2237/061 ,  H01J2237/06308

Abstract: The invention relates to a device (20) for producing an electron beam (4), which comprises a hot cathode (1), a cathode electrode (2), an anode electrode (3) having an opening (6) through which an electron beam (4) produced by the device can pass, wherein during the operation of the device (20) a voltage for accelerating the electrons exiting from the hot cathode (1) is applied between the cathode electrode (2) and the anode electrode (3), and further comprising deflection means that can deflect the electron beam (4) that has passed through the opening of the anode electrode (3), wherein the deflection means comprise at least one deflection electrode (8, 12), which can reflect the electron beam (4) and/or which comprises a deflection surface (9) that is inclined towards the propagation direction of the electron beam (4).

Abstract translation: 本发明涉及一种用于制造电子束（4）的装置（20），其包括热阴极（1），阴极电极（2），具有开口（6）的阳极电极（3） 由器件产生的光束（4）可以通过，其中在器件（20）的操作期间，在阴极电极（2）和阳极电极（3）之间施加用于加速从热阴极（1）出射的电子的电压 ），并且还包括偏转装置，其可以偏转已经通过阳极电极（3）的开口的电子束（4），其中偏转装置包括至少一个偏转电极（8,12），其可以反映 电子束（4）和/或包括朝向电子束（4）的传播方向倾斜的偏转表面（9）。

公开(公告)号：US08558199B2

公开(公告)日：2013-10-15

申请号：US13724379

申请日：2012-12-21

Applicant: Institut National de la Recherche Scientifique

Inventor： Stephane Payeur ,  Sylvain Fourmaux ,  Jean-Claude Kieffer ,  Michel Piche ,  Jean-Philippe MacLean ,  Christopher Tchervenkov

IPC: G21G4/00

CPC classification number: G21G4/00 ,  H01J3/02 ,  H01J3/04 ,  H01J27/20 ,  H01J27/24 ,  H01J31/00 ,  H01J35/02 ,  H05H15/00

Abstract: A method for generating an ultrashort charged particle beam, comprising creating a high intensity longitudinal E-field by shaping and tightly focusing, in an on-axis geometry, a substantially radially polarized laser beam, and using the high intensity longitudinal E-field for interaction with a medium to accelerate charged particles.

Abstract translation: 一种用于产生超短带电粒子束的方法，包括通过在轴上的几何形状中成形和紧密聚焦来产生高强度纵向电场，基本上径向偏振的激光束，并且使用高强度纵向电场进行相互作用 用介质加速带电粒子。

公开(公告)号：US20130161529A1

公开(公告)日：2013-06-27

申请号：US13774593

申请日：2013-02-22

Applicant: ADVANCED PLASMONICS, INC.

Inventor： Jonathan Gorrell ,  Mark Davidson ,  Michael E. Maines

IPC: H01J27/02 ,  H01J29/70 ,  H01J31/00

CPC classification number: H01J27/022 ,  G21K1/06 ,  G21K5/04 ,  H01J25/00 ,  H01J29/70 ,  H01J31/00

Abstract: When using micro-resonant structures, a resonant structure may be turned on or off (e.g., when a display element is turned on or off in response to a changing image or when a communications switch is turned on or off to send data different data bits). Rather than turning the charged particle beam on and off, the beam may be moved to a position that does not excite the resonant structure, thereby turning off the resonant structure without having to turn off the charged particle beam. In one such embodiment, at least one deflector is placed between a source of charged particles and the resonant structure(s) to be excited. When the resonant structure is to be turned on (i.e., excited), the at least one deflector allows the beam to pass by undeflected. When the resonant structure is to be turned off, the at least one deflector deflects the beam away from the resonant structure by an amount sufficient to prevent the resonant structure from becoming excited.

公开(公告)号：US08384042B2

公开(公告)日：2013-02-26

申请号：US12329866

申请日：2008-12-08

Applicant: Jonathan Gorrell ,  Mark Davidson ,  Michael E Maines

Inventor： Jonathan Gorrell ,  Mark Davidson ,  Michael E Maines

IPC: G09G1/00

CPC classification number: H01J27/022 ,  G21K1/06 ,  G21K5/04 ,  H01J25/00 ,  H01J29/70 ,  H01J31/00

Abstract: When using micro-resonant structures, a resonant structure may be turned on or off (e.g., when a display element is turned on or off in response to a changing image or when a communications switch is turned on or off to send data different data bits). Rather than turning the charged particle beam on and off, the beam may be moved to a position that does not excite the resonant structure, thereby turning off the resonant structure without having to turn off the charged particle beam. In one such embodiment, at least one deflector is placed between a source of charged particles and the resonant structure(s) to be excited. When the resonant structure is to be turned on (i.e., excited), the at least one deflector allows the beam to pass by undeflected. When the resonant structure is to be turned off, the at least one deflector deflects the beam away from the resonant structure by an amount sufficient to prevent the resonant structure from becoming excited.

公开(公告)号：US20070093009A1

公开(公告)日：2007-04-26

申请号：US11561685

申请日：2006-11-20

Applicant: Robert BAPTIST ,  Fabrice Letertre

Inventor： Robert BAPTIST ,  Fabrice Letertre

IPC: H01L21/338 ,  H01L21/20 ,  H01L21/36

CPC classification number: H01L33/20 ,  H01J31/00 ,  H01L33/007 ,  H01L33/0079 ,  H01L2924/0002 ,  H01S3/0959 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/04 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/3013 ,  H01S5/32341 ,  H01L2924/00

Abstract: A method for making a semiconductor device with vertical electron injection, including: transferring a monocrystalline thin film onto a first face of a support substrate; producing at least one electronic component from the monocrystalline thin film; forming at least one recess in a second face of the substrate to enable electric or electronic access to the electronic component through the monocrystalline thin film; and producing a vertical electron injector configured to inject electrons into the electronic component.

Abstract translation: 一种用于制造具有垂直电子注入的半导体器件的方法，包括：将单晶薄膜转移到支撑衬底的第一面上; 从单晶薄膜生产至少一种电子元件; 在所述基板的第二面中形成至少一个凹部，以使得能够通过所述单晶薄膜电子或电子地进入所述电子部件; 以及制造配置成将电子注入电子部件的垂直电子注入器。

公开(公告)号：US3937997A

公开(公告)日：1976-02-10

申请号：US505768

申请日：1974-09-13

Applicant: Dene Barrett

Inventor： Dene Barrett

IPC: H01J31/00 ,  H01J31/02

CPC classification number: H01J31/00

Abstract: The present invention relates to apparatus for generating electric signals. Basically, the disclosed apparatus comprises a cathode-ray-type tube wherein the electron-beam sweeps across an especially designed electron-receptor. By suitable design of the receptor in conjunction with the beam-deflecting signal, the disclosed apparatus generates many desired output signals.

Abstract translation: 本发明涉及产生电信号的装置。 基本上，所公开的设备包括阴极射线管，其中电子束扫过特别设计的电子受体。 通过结合光束偏转信号的受体的合适设计，所公开的装置产生许多期望的输出信号。

公开(公告)号：US3479516A

公开(公告)日：1969-11-18

申请号：US3479516D

申请日：1965-11-26

Applicant: NAT RES DEV

Inventor： MCGEE JAMES DWYER ,  BEESLEY JOHN ,  BERG ANTHONY DAVID

IPC: H01J31/00 ,  H01J31/50 ,  H01J39/12

CPC classification number: H01J31/00 ,  H01J31/502