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    Wavelength detector and wavelength calibration system
    27.
    发明授权
    Wavelength detector and wavelength calibration system 有权
    波长检测器和波长校准系统

    公开(公告)号：US09478933B2

    公开(公告)日：2016-10-25

    申请号：US13535641

    申请日：2012-06-28

    Applicant: Toru Suzuki ,  Shinichi Matsumoto

    Inventor： Toru Suzuki ,  Shinichi Matsumoto

    IPC: H01S3/13 ,  G01J1/42 ,  H01S3/137 ,  H01S3/225 ,  G01J9/00 ,  G01J9/02 ,  H01J47/00 ,  H01S3/08 ,  H01S3/10

    CPC classification number: H01S3/13 ,  G01J1/429 ,  G01J9/00 ,  G01J9/0246 ,  H01J47/00 ,  H01S3/08004 ,  H01S3/08009 ,  H01S3/10069 ,  H01S3/1303 ,  H01S3/137 ,  H01S3/225

    Abstract: The wavelength detector includes a diffusion element that diffuses the laser beam; a light collection optical system provided downstream from the diffusion element; a member, including an aperture, provided downstream from the light collection optical system; a discharge tube that is provided downstream from the member and that includes a cylindrical anode and a cylindrical cathode that each have a through-hole formed therein, and that is configured so that an electrical property between the anode and the cathode changes due to an opto-galvanic effect when a laser beam having a predetermined wavelength passes through the through-hole of the cathode in a state in which a DC voltage is applied to the anode; and a high-voltage DC power source. The discharge tube is disposed so that the laser beam that passes through the aperture passes through the through-hole of the cathode of the discharge tube without directly irradiating the cathode.

    Abstract translation: 波长检测器包括扩散激光束的扩散元件; 设置在扩散元件下游的光收集光学系统; 包括孔的构件，设置在所述光收集光学系统的下游; 放电管，其设置在所述构件的下游，并且包括圆柱形阳极和圆柱形阴极，每个具有形成在其中的通孔，并且被配置为使得阳极和阴极之间的电特性由于光电而改变 当具有预定波长的激光束在向阳极施加直流电压的状态下穿过阴极的通孔时， 和高压直流电源。 放电管被布置成使得穿过孔的激光束通过放电管的阴极的通孔而不直接照射阴极。

    Mesotube electode attachment
    29.
    发明申请
    Mesotube electode attachment 审中-公开
    中间管电极附件

    公开(公告)号：US20070114264A1

    公开(公告)日：2007-05-24

    申请号：US11283203

    申请日：2005-11-18

    Applicant: Barrett Cole ,  Khanh Nguyen ,  Leonard Hilton

    Inventor： Barrett Cole ,  Khanh Nguyen ,  Leonard Hilton

    IPC: B23K37/04 ,  B23K31/02

    CPC classification number: B23K11/36 ,  B23K11/006 ,  H01J47/00

    Abstract: A device for positioning a shaped element on a surface of another element mounted on a mechanism to permit welding the element to the surface. An insulating fixture mounts the device on the mechanism and positions an extension having a clamp locating end that positions a clamp for holding the shaped element in a precise position in contact with the surface during welding. The clamp is conductive and directs current from the welding to the insulating fixture and prevent passage of current on the shaped element beyond the clamp.

    Abstract translation: 用于将成形元件定位在安装在机构上的另一元件的表面上以允许将元件焊接到表面上的装置。 绝缘夹具将装置安装在机构上并定位具有夹具定位端的延伸部，该延伸部定位用于在焊接期间将成形元件保持在与表面接触的精确位置的夹具。 夹具是导电的，并将电流从焊接引导到绝缘夹具，并防止成形元件上的电流超过夹具。

    Sensor for detecting ultra-violet rays
    30.
    发明授权
    Sensor for detecting ultra-violet rays 失效
    用于检测紫外线的传感器

    公开(公告)号：US5500531A

    公开(公告)日：1996-03-19

    申请号：US285509

    申请日：1994-08-03

    Applicant: Jong U. Bu

    Inventor： Jong U. Bu

    IPC: H01L31/101 ,  H01J47/00

    CPC classification number: H01J47/00

    Abstract: This invention relates to a sensor for detecting ultra-violet rays suitable for mass-production. The sensor for detecting ultra-violet rays includes one that is formed by junction of an upper layer with a lower layer so as to face each other across an air cavity, which lower layer includes a silicon substrate having a cavity, an insulation layer formed on all over the silicon substrate, a photoelectric pole part formed on the insulation layer and a protection layer formed on the photoelectric part, and which upper layer includes a glass substrate having a transmissive characteristic to ultra-violet rays, and an anode part formed on the glass substrate.

    Abstract translation: 本发明涉及一种用于检测适合批量生产的紫外线的传感器。 用于检测紫外线的传感器包括通过上层与下层的接合而形成的传感器，以便穿过空气腔彼此面对，该下层包括具有空腔的硅衬底，形成在 遍布硅基板，形成在绝缘层上的光电极部分和形成在光电部件上的保护层，上层包括具有紫外线透射特性的玻璃基板和形成在紫外线上的阳极部分 玻璃基板。

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