Abstract:
A portable Laser Plasma Spectroscopy (LPS) system and process is provided for performing in situ, near-real time, remote elemental analysis and identification of deposits or other foreign material found on surfaces of machine parts, such as turbine compressor blades or the like, wherein identification of the elemental constituents of a particular deposit is obtained without incurring significant ablative damage to the machine part substrate material underlying the deposit.
Abstract:
The present invention is directed to asynchronous scanning devices and methods of using asynchronous scanning to acquire fluorescence data from a sample, such as biological tissue, to facilitate diagnosis of the presence or absence of disease or other abnormality in the sample. The present invention is useful for biomedical diagnostics, chemical analysis or other evaluation of the target sample.
Abstract:
A qualitative analysis is carried out by first storing reference spectral line data of various elements in different compound forms, exciting a sample and spectroscopically analyzing signal light emitted from the sample to obtain measured spectral line data, determining whether these measured spectral line data include spectral lines of specified compound-forming elements, and comparing the reference spectral line data with the measured spectral line data, if the measured spectral line data are found to include spectral lines of any of the compound-forming elements, to thereby identify elements in the sample.
Abstract:
The method for determining radiation stability of a crystal to radiation of a working wavelength to be employed in a subsequent application includes taking a first absorption spectrum (A) of a cleaved piece of the crystal with a given thickness (D) over a predetermined wavelength range from a first wavelength (&lgr;1) to a second wavelength (&lgr;2) by means of a spectrophotometer. Then the cleaved piece of the crystal is irradiated with an energetic radiation source so as to form all theoretically possible color centers (saturation). After the irradiating a second absorption spectrum (B) of the cleaved piece of crystal is taken over the same predetermined wavelength range. Then a surface integral of a difference spectrum of the first absorption spectrum and the second absorption spectrum over the predetermined wavelength range is formed and divided by the thickness (D) to obtain a scaled surface integral value. The absorption coefficient &Dgr;k at the working wavelength for the subsequent application is then obtained preferably from the scaled surface integral value for the damage induced by the energetic radiation and a calibration curve relating the absorption coefficient at the working wavelength to the surface integral of the absorption coefficient induced by the energetic radiation.
Abstract:
A system for detecting fluorescence emitted from a plurality of samples in a sample tray is provided. The system generally includes a plurality of lenses positioned in a linear arrangement, a linear actuator configured to translate the plurality of lenses, an excitation light source for generating an excitation light, an excitation light direction mechanism for directing the excitation light to a single lens of the plurality of lenses at a time so that a single sample holder aligned with the lens is illuminated at a time, and an optical detection system for analyzing light from the sample holders. In certain embodiments, the optical detection system includes a light dispersing element configured to spectrally disperse the light from the sample holder being illuminated, and a lens element configured to receive light from the light dispersing element and direct the light onto a light detection device. A method of scanning a sample tray having a plurality of samples positioned in sample holders to detect fluorescence is also provided.
Abstract:
Aspects of the present invention provide novel methods and devices for sampling gas, exciting the sampled gas to emit radiation and detecting in real time from the emitted radiation a plurality of wave bands of an emission spectrum. Energy used to excite the sampled gas may be adjusted based on the detected wave bands. A process may be controlled in real time based on the detected wave bands. Novel interfaces may be used to display portions of the detected wave bands. A known flow of a reference gas may be included in the flow of sampled gases and an unknown flow of an unknown flow gas determined.
Abstract:
Systems and methods for analyzing a sample are disclosed. The system may include a light source operable to transmit light onto the sample, a detector operable to detect intensity of the light emitted from the sample, and a power modulator. The power modulator modulates the light source power such that light is emitted from the light source in more than one mode to reduce changes in the emitted light due to temperature changes in the light source.
Abstract:
Apparatus and methods for measuring light transmitted from a sample. The apparatus may include a stage, a light source, and a detector. The stage may be configured to hold a microplate having a plurality of sample wells. The apparatus may be configured to take frequency-domain time-resolved measurements of one or more of luminescence lifetimes and reorientational correlation times of a luminescent analyte in the sample.
Abstract:
The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Plasma health evaluations and process identification through optical emissions analysis are included in this aspect. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.
Abstract:
The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Plasma health evaluations and process identification through optical emissions analysis are included in this aspect. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.