公开(公告)号：US20210043417A1

公开(公告)日：2021-02-11

申请号：US16803213

申请日：2020-02-27

Applicant: Kioxia Corporation

Inventor： Osamu NAGANO

IPC: H01J37/28 ,  H01J37/02

Abstract: An inspection method of an embodiment includes: positively charging a substrate on which a pattern is formed by irradiating the substrate with a first electron beam; generating a secondary electron on a surface of the substrate by irradiating the substrate with a second electron beam; detecting the generated secondary electron; and inspecting the pattern based on the detected secondary electron, in which when the substrate is irradiated with the first electron beam, the first electron beam is made incident on the substrate at an incident angle different from an incident angle of the second electron beam with respect to the substrate, while positions of an emission source of the first electron beam and the substrate are being moved relatively.

公开(公告)号：US10903036B2

公开(公告)日：2021-01-26

申请号：US17005630

申请日：2020-08-28

Applicant: Hitachi High-Tech Corporation

Inventor： Seiichiro Kanno ,  Hiroyuki Andou

IPC: H01J37/20 ,  H02N13/00 ,  H01J37/02

Abstract: A charged-particle beam device wherein suppressing the effects of static build-up is compatible with executing high-throughput measurements and examination. The charged-particle beam device equipped with an electrostatic chuck (803), includes an electrometer (11) for measuring the electric potential of the electrostatic chuck, a charge removing device (805) for removing charge from the electrostatic chuck, and a control device (806) for controlling the charge removing device in such a manner that the charge removal by the charge removing device is executed after reaching a certain number of processed samples irradiated by the charged particle beam, or after a predetermined processing time. When the result of the electric potential measurement by the electrometer does not meet a predetermined condition, the control device executes at least one among increasing and decreasing the number processed or the processing time.

公开(公告)号：US10814361B2

公开(公告)日：2020-10-27

申请号：US15185724

申请日：2016-06-17

Applicant: VISTEC ELECTRON BEAM GMBH

Inventor： Christian Borschel

IPC: B08B7/04 ,  H01J37/02 ,  H01J37/317 ,  B08B5/00 ,  B08B7/00 ,  H01J37/18

Abstract: In a particle beam apparatus and a method for operating a particle beam apparatus, the particle beam apparatus has a column having a particle-beam optical system for generating a particle beam, to thereby expose a desired pattern in a vacuum sample chamber in an exposure operation. In a cleaning operation, a regulable gas stream having photodissociatable gas is fed to the column and/or the vacuum sample chamber via a gas-feed system. The photodissociation of the supplied gas is brought about in the cleaning operation with the aid of a plurality of light sources distributed spatially in the column and/or in the vacuum sample chamber. In the cleaning operation, individual light sources are able to be switched on and off selectively with respect to time via a control unit connected to the light sources, in order to clean individual elements in the column and/or in the vacuum sample chamber in targeted fashion.

公开(公告)号：US10734189B2

公开(公告)日：2020-08-04

申请号：US16323418

申请日：2018-03-28

Applicant: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hao Jing ,  Dongwoo Kang ,  Yongyi Fu ,  Chenliang Liu ,  Rujian Li ,  Kang Luo

IPC: H01J37/02 ,  H01J37/244 ,  H01J37/317 ,  H01J37/05

Abstract: The present disclosure relates to an ion implantation amount adjustment device that includes: an adjuster configured to turn on or off an ion outlet of the ion implantation apparatus; and an actuator configured to control movement of the adjuster to adjust an opening degree of the ion outlet.

公开(公告)号：US10373793B2

公开(公告)日：2019-08-06

申请号：US15687886

申请日：2017-08-28

Applicant: NUFLARE TECHNOLOGY, INC. ,  KABUSHIKI KAISHA TOSHIBA

Inventor： Michihiro Kawaguchi ,  Kiminobu Akeno ,  Kenichi Kataoka ,  Tomoki Umetsu

IPC: H01R4/68 ,  H01J37/02 ,  H01J37/317 ,  H01R4/2406 ,  H01R4/66

Abstract: A conductive contact point pin includes a pin body, and a plurality of convex portions formed in a tip portion of the pin body, wherein the conductive contact point pin breaks, by pressing a substrate where a film to be broken is formed on a conductive film from above the film to be broken, the film to be broken in order to be electrically connected to the conductive film.

公开(公告)号：US10347457B1

公开(公告)日：2019-07-09

申请号：US15847485

申请日：2017-12-19

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Alexander S. Perel, Sr. ,  David P. Sporleder ,  Adam M. McLaughlin ,  Craig R. Chaney ,  Neil J. Bassom

IPC: H01J37/02 ,  H01J37/30

Abstract: A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or compression springs. By changing the length of the tension spring or compression spring when under load, the spring force of the spring can be increased. This increased spring force increases the compressive force between the faceplate and the chamber walls, creating improved thermal conductivity. In certain embodiments, the length of the spring is regulated by an electronic length adjuster. This electronic length adjuster is in communication with a controller that outputs an electrical signal indicative of the desired length of the spring. Various mechanisms for adjusting the length of the spring are disclosed.

公开(公告)号：US20190189387A1

公开(公告)日：2019-06-20

申请号：US15847485

申请日：2017-12-19

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Alexander S. Perel ,  David P. Sporleder ,  Adam M. McLaughlin ,  Craig R. Chaney ,  Neil J. Bassom

IPC: H01J37/02 ,  H01J37/30

CPC classification number: H01J37/023 ,  H01J37/30 ,  H01J37/3007 ,  H01J2237/082

Abstract: A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or compression springs. By changing the length of the tension spring or compression spring when under load, the spring force of the spring can be increased. This increased spring force increases the compressive force between the faceplate and the chamber walls, creating improved thermal conductivity. In certain embodiments, the length of the spring is regulated by an electronic length adjuster. This electronic length adjuster is in communication with a controller that outputs an electrical signal indicative of the desired length of the spring. Various mechanisms for adjusting the length of the spring are disclosed.

公开(公告)号：US20190164718A1

公开(公告)日：2019-05-30

申请号：US16323418

申请日：2018-03-28

Applicant: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hao JING ,  Dongwoo KANG ,  Yongyi FU ,  Chenliang LIU ,  Rujian LI ,  Kang LUO

IPC: H01J37/02 ,  H01J37/317 ,  H01J37/244

Abstract: The present disclosure relates to an ion implantation amount adjustment device that includes: an adjuster configured to turn on or off an ion outlet of the ion implantation apparatus; and an actuator configured to control movement of the adjuster to adjust an opening degree of the ion outlet.

公开(公告)号：US10269531B2

公开(公告)日：2019-04-23

申请号：US15914498

申请日：2018-03-07

Applicant: JEOL Ltd.

Inventor： Tatsuru Kuramoto ,  Yuichiro Ohori ,  Yoshinori Matsuda ,  Makoto Aoshima

IPC: H01J37/09 ,  H01J37/02 ,  H01J37/244 ,  H01J37/28 ,  H01J37/305 ,  H01J37/14 ,  H01J37/30

Abstract: A scanning electron microscope having a charged particle device that processes a specimen using a charged particle beam, the scanning electron microscope includes: an electron source; a secondary-electron detector that detects secondary electrons generated from the specimen; a backscattered-electron detector that is disposed closer to the electron source than a detection surface of the secondary-electron detector to detect backscattered electrons generated from the specimen; a shielding plate for shielding a detection surface of the backscattered-electron detector; and a moving mechanism that moves the shielding plate. In a state where the shielding plate is moved by the moving mechanism so as to shield the detection surface of the backscattered-electron detector, the shielding plate is located between the detection surface of the backscattered-electron detector and the detection surface of the secondary-electron detector.

公开(公告)号：USRE47275E1

公开(公告)日：2019-03-05

申请号：US14883982

申请日：2015-10-15

Applicant: Lam Research Corporation

Inventor： Jerrell Kent Antolik ,  Yen-kun Victor Wang ,  John Holland

IPC: H01J37/02 ,  H01L21/67

Abstract: A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support arm is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.