公开(公告)号：US20120091454A1

公开(公告)日：2012-04-19

申请号：US12907620

申请日：2010-10-19

Applicant: Kai-Chih Liang ,  Wen-Chuan Tai ,  Chun-Ren Cheng

Inventor： Kai-Chih Liang ,  Wen-Chuan Tai ,  Chun-Ren Cheng

IPC: H01L23/58 ,  C23F1/08 ,  H01L21/66

CPC classification number: H01L22/12

Abstract: A method for process control is disclosed. The method includes performing an etching process on a semiconductor substrate forming a structure and a test structure having a pattern and a releasing mechanism coupled to the pattern; and monitoring the pattern of the test structure to determine whether the etching process is complete.

Abstract translation: 公开了一种用于过程控制的方法。 该方法包括对形成结构的半导体衬底和具有耦合到图案的图案和释放机构的测试结构进行蚀刻处理; 并监测测试结构的图案，以确定蚀刻过程是否完成。

公开(公告)号：US07998775B2

公开(公告)日：2011-08-16

申请号：US12619542

申请日：2009-11-16

Applicant: Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jung-Huei Peng ,  Jiou-Kang Lee ,  Ting-Hau Wu

Inventor： Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jung-Huei Peng ,  Jiou-Kang Lee ,  Ting-Hau Wu

IPC: H01L21/30

CPC classification number: B81C1/00595

Abstract: When a native oxide grows on a polysilicon member of, e.g., a MEMS device, delamination between the polysilicon member and subsequently formed layers may occur because the native oxide is undercut during removal of sacrificial oxide layers. Nitriding the native oxide increases the etch selectivity relative the sacrificial oxide layers. Undercutting and delamination is hence reduced or eliminated altogether.

Abstract translation: 当天然氧化物在例如MEMS器件的多晶硅构件上生长时，可能会发生多晶硅构件和随后形成的层之间的分层，因为在去除牺牲氧化物层期间天然氧化物被切削。 氮化自然氧化物相对于牺牲氧化物层增加蚀刻选择性。 因此，底切和分层完全减少或消除。

公开(公告)号：US20100117168A1

公开(公告)日：2010-05-13

申请号：US12347046

申请日：2008-12-31

Applicant: Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

Inventor： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

IPC: H01L29/84

CPC classification number: H04R19/005 ,  H04R19/04 ,  H04R2201/003

Abstract: An integrated circuit structure includes a capacitor, which further includes a first capacitor plate formed of polysilicon, and a second capacitor plate substantially encircling the first capacitor plate. The first capacitor plate has a portion configured to vibrate in response to an acoustic wave. The second capacitor plate is fixed and has slanted edges facing the first capacitor plate.

Abstract translation: 集成电路结构包括电容器，其还包括由多晶硅形成的第一电容器板和基本上环绕第一电容器板的第二电容器板。 第一电容器板具有被配置为响应于声波而振动的部分。 第二电容器板是固定的并且具有面向第一电容器板的倾斜边缘。

公开(公告)号：US08776600B2

公开(公告)日：2014-07-15

申请号：US13610178

申请日：2012-09-11

Applicant: Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Shang-Ying Tsai

Inventor： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Shang-Ying Tsai

IPC: G01C19/00

CPC classification number: G01C19/56 ,  Y10T29/49002

Abstract: A gyroscope sensor includes a gyro disk. A first light source is configured to provide a first light beam. A first light receiver is configured to receive the first light beam for sensing a vibration at a first direction of the gyro disk. A second light source is configured to provide a second light beam substantially parallel with the first light beam. A second light receiver is configured to receive the second light beam for sensing a vibration in a second direction of the gyro disk. The second direction is different from the first direction.

Abstract translation: 陀螺传感器包括陀螺盘。 第一光源被配置为提供第一光束。 第一光接收器被配置为接收用于感测陀螺盘的第一方向上的振动的第一光束。 第二光源被配置为提供基本上与第一光束平行的第二光束。 第二光接收器被配置为接收用于感测陀螺盘的第二方向上的振动的第二光束。 第二个方向与第一个方向不同。

公开(公告)号：US20140054461A1

公开(公告)日：2014-02-27

申请号：US13595743

申请日：2012-08-27

Applicant: Alexander Kalnitsky ,  Chia-Hua Chu ,  Fei-Lung Lai ,  Chun-Wen Cheng ,  Chun-Ren Cheng ,  Yi-Hsien Chang

Inventor： Alexander Kalnitsky ,  Chia-Hua Chu ,  Fei-Lung Lai ,  Chun-Wen Cheng ,  Chun-Ren Cheng ,  Yi-Hsien Chang

IPC: G01J1/44 ,  G01J5/20 ,  H01L31/18 ,  G01J5/00

CPC classification number: G01J1/1626 ,  G01J1/4204 ,  G01J3/465 ,  H01L31/02164 ,  H01L31/103 ,  H01L31/105

Abstract: A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor.

Abstract translation: 光检测器包括第一光传感器和用于检测入射光的第二光传感器。 将Ge膜设置在第一光传感器上以通过红外（IR）波长的光并阻挡可见波长的光。 Ge膜不覆盖第二个光传感器。

公开(公告)号：US08647892B2

公开(公告)日：2014-02-11

申请号：US12907620

申请日：2010-10-19

Applicant: Kai-Chih Liang ,  Wen-Chuan Tai ,  Chun-Ren Cheng

Inventor： Kai-Chih Liang ,  Wen-Chuan Tai ,  Chun-Ren Cheng

IPC: H01L23/58 ,  H01L21/66

CPC classification number: H01L22/12

Abstract: A method for process control is disclosed. The method includes performing an etching process on a semiconductor substrate forming a structure and a test structure having a pattern and a releasing mechanism coupled to the pattern; and monitoring the pattern of the test structure to determine whether the etching process is complete.

Abstract translation: 公开了一种用于过程控制的方法。 该方法包括对形成结构的半导体衬底和具有耦合到图案的图案和释放机构的测试结构进行蚀刻处理; 并监测测试结构的图案，以确定蚀刻过程是否完成。

公开(公告)号：US20130105868A1

公开(公告)日：2013-05-02

申请号：US13480161

申请日：2012-05-24

Applicant: Alexander Kalnitsky ,  Yi-Shao Liu ,  Kai-Chih Liang ,  Chia-Hua Chu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

Inventor： Alexander Kalnitsky ,  Yi-Shao Liu ,  Kai-Chih Liang ,  Chia-Hua Chu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

IPC: H01L29/78 ,  H01L21/336

CPC classification number: G01N27/4145 ,  G01N27/414 ,  G01N27/4148 ,  H01L21/84 ,  H01L27/1203 ,  H01L51/0093

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

Abstract translation: 本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET器件可以包括衬底; 设置在基板的第一表面上的栅极结构和形成在基板的第二表面上的界面层。 界面层可以允许将受体置于界面层上以检测生物分子或生物实体的存在。

公开(公告)号：US08237263B2

公开(公告)日：2012-08-07

申请号：US12651002

申请日：2009-12-31

Applicant: Ting-Hau Wu ,  Chun-Ren Cheng ,  Chun-Wen Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Shang-Ying Tsai ,  Te-Hsi Lee

Inventor： Ting-Hau Wu ,  Chun-Ren Cheng ,  Chun-Wen Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Shang-Ying Tsai ,  Te-Hsi Lee

IPC: H01L23/34

CPC classification number: H01L23/427 ,  B81B7/0093 ,  B81B2207/99 ,  F28D15/02 ,  F28F3/048 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit, a method of operating the integrated circuit, and a method of fabricating the integrated circuit are disclosed. According to one of the broader forms of the invention, a method and apparatus involve an integrated circuit that includes a heat transfer structure having a chamber that has a fluid disposed therein and that extends between a heat generating portion and a heat absorbing portion. Heat is absorbed into the fluid from the heat generating portion, and the fluid changes from a first phase to a second phase different from the first phase when the heat is absorbed. Heat is released from the fluid to the heat absorbing portion, and the fluid changes from the second phase to the first phase when the heat is released.

Abstract translation: 公开了集成电路，操作集成电路的方法以及制造集成电路的方法。 根据本发明的一个更广泛的形式，一种方法和装置包括集成电路，该集成电路包括一个传热结构，该传热结构具有一个具有设置在其中的流体并且在发热部分和吸热部分之间延伸的腔室。 热量从发热部分吸收到流体中，并且当热被吸收时，流体从第一相位变化到与第一相位不同的第二相位。 热量从流体释放到吸热部分，并且当释放热量时，流体从第二相变为第一相。

公开(公告)号：US20120007220A1

公开(公告)日：2012-01-12

申请号：US13240540

申请日：2011-09-22

Applicant: Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

Inventor： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

IPC: H01L29/02

CPC classification number: B81C1/00666 ,  H01L23/562 ,  H01L24/16 ,  H01L24/31 ,  H01L24/48 ,  H01L24/95 ,  H01L29/0657 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83365 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3511 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A method of forming an integrated circuit structure including providing a wafer comprising a front surface and a back surface, wherein the wafer comprises a chip; forming an opening extending from the back surface into the chip; filling an organic material in the opening, wherein substantially no portion of the organic material is outside of the opening and on the back surface of the wafer; and baking the organic material to cause a contraction of the organic material.

Abstract translation: 一种形成集成电路结构的方法，包括提供包括前表面和后表面的晶片，其中所述晶片包括芯片; 形成从后表面延伸到芯片中的开口; 在开口中填充有机材料，其中基本上没有部分有机材料在晶片的开口和背面之外; 并烘烤有机材料以引起有机材料的收缩。

公开(公告)号：US20100308424A1

公开(公告)日：2010-12-09

申请号：US12751633

申请日：2010-03-31

Applicant: Ting-Hau Wu ,  Chun-Wen Cheng ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee ,  Allen Timothy Chang

Inventor： Ting-Hau Wu ,  Chun-Wen Cheng ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee ,  Allen Timothy Chang

IPC: H01L29/84

CPC classification number: G01P15/18 ,  G01P15/125 ,  G01P2015/082 ,  G01P2015/084 ,  H01L28/86

Abstract: An integrated circuit structure includes a substrate having a top surface; a first conductive layer over and contacting the top surface of the substrate; a dielectric layer over and contacting the first conductive layer, wherein the dielectric layer includes an opening exposing a portion of the first conductive layer; and a proof-mass in the opening and including a second conductive layer at a bottom of the proof-mass. The second conductive layer is spaced apart from the portion of the first conductive layer by an air space. Springs anchor the proof-mass to portions of the dielectric layer encircling the opening. The springs are configured to allow the proof-mass to make three-dimensional movements.

Abstract translation: 集成电路结构包括具有顶表面的基板; 在衬底的顶表面上方并接触第一导电层; 电介质层，其与所述第一导电层接触并接触，其中所述电介质层包括露出所述第一导电层的一部分的开口; 并且在开口中具有证明质量，并且包括在质量块的底部的第二导电层。 第二导电层通过空气间隔与第一导电层的部分间隔开。 弹簧将证明质量锚定到围绕开口的介电层的部分。 弹簧被配置为允许证明物质进行三维运动。