Abstract:
A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.
Abstract:
A non-invasive percutaneously acting apparatus for relieving constipation or diarrhea and appropriately stimulating peristaltic movement in the human gastro-intestinal (GI) tract. The apparatus includes an annular or toroidal shaped hollow housing having a working surface on one side thereof. A multi-point electrode generally coextensive with the working surface includes a plurality of point electrodes each separately mounted in and preferably biasingly moveably extend outwardly from the working surface. A d.c. pulse generator selectively and sequentially connectable to the point electrodes whereby, when the working surface is positioned against or in close proximity to the skin over the GI tract, the point electrodes deliver electrical pulses percutaneously and sequentially moving from one point electrode to the next adjacent point electrode repeatedly around the working surface.
Abstract:
The present invention relates to a latch hook structure for removable storage devices, comprising a removable storage device which has an ornamental front face and two sides where two tracks parallel to each other are mounted respectively, wherein at least one of the two tracks has a first sliding structure at the front end thereof; and a latch hook member correspondingly assembled to the front end of track, wherein latch hook member includes a straight plate having a front edge integrally formed with a latch hook part around which latch hook space is reserved and a second sliding structure corresponding to the first sliding structure to effect a relative slide backwards and forwards, and is further connected to the track with a restoring spring for providing latch hook member with a backward restoring elastic force to keep latch hook part aligned with ornamental front face of the removable storage device.
Abstract:
The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).
Abstract:
Maintaining a reactor chamber of a chemical vapor deposition system includes depositing layers on an inner surface of the reactor chamber, where the layers form an accumulation layer. When the accumulation layer reaches a specified thickness, a plasma clean cycle is performed by introducing cleaning gas into the reactor chamber. The volume of the cleaning gas used during one or more plasma clean cycles is calculated, where the volume indicates the volume of cleaning gas introduced into the reactor chamber. A notification is provided when the volume of the cleaning gas used during the plasma clean cycles has reached a predetermined volume.
Abstract:
The invention includes a process for providing a coupled propylene polymer foam. The invention also includes any composition comprising a product formed by the process of the invention and any article formed from such a composition.
Abstract:
A single pin integrated oscillator circuit includes an amplifier having a first input terminal to which an external crystal may be connected, and a second input terminal which receives a feedback path from an output terminal of the amplifier. An oscillator output signal having a relatively large voltage swing is provided from the first input terminal through a buffer. The oscillator operates over a wide range of voltages and process variations, and it can accept an input signal from an external crystal or can accept any clock signal having a swing of approximately 1 V.
Abstract:
A bias voltage generator for a voltage controlled oscillator is described. In one aspect of the invention, the bias voltage generator includes a biasing circuit to generate a minimum clock output at zero operating voltage, and includes a common mode rejection circuit for the BIASN and BIASP control voltages for the differential delay stages and a IDD test current shut-down circuit. A differential delay stage is described that includes a current source controlled by the BIASN and BIASP control voltages from the bias voltage generator, a resistance linearization circuit for current controlling transistors of a BIASN circuit, and a process variation circuit for compensating for temperature and process variations. The improved characteristics of the resulting VCO permits high frequency operation with a relatively low gain, relatively constant gain throughout operating voltage range, improved noise rejection capabilities, increased speed of delay stage, and reduced output signal swing. All of which contribute to improved phase locked loop reliability especially when operating near the ends of the operating range.
Abstract:
A bias voltage generator for a voltage controlled oscillator is described. In one aspect of the invention, the bias voltage generator includes a biasing circuit to generate a minimum clock output at zero operating voltage, and includes a common mode rejection circuit for the BIASN and BIASP control voltages for the differential delay stages and a IDD test current shut-down circuit. A differential delay stage is described that includes a current source controlled by the BIASN and BIASP control voltages from the bias voltage generator, a resistance linearization circuit for current controlling transistors of a BIASN circuit, and a process variation circuit for compensating for temperature and process variations. The improved characteristics of the resulting VCO permits high frequency operation with a relatively low gain, relatively constant gain throughout operating voltage range, improved noise rejection capabilities, increased speed of delay stage, and reduced output signal swing. All of which contribute to improved phase locked loop reliability especially when operating near the ends of the operating range.
Abstract:
Embodiments of the present disclosure are directed towards a circuit board having integrated passive devices such as inductors, capacitors, resistors and associated techniques and configurations. In one embodiment, an apparatus includes a circuit board having a first surface and a second surface opposite to the first surface and a passive device integral to the circuit board, the passive device having an input terminal configured to couple with electrical power of a die, an output terminal electrically coupled with the input terminal, and electrical routing features disposed between the first surface and the second surface of the circuit board and coupled with the input terminal and the output terminal to route the electrical power between the input terminal and the output terminal, wherein the input terminal includes a surface configured to receive a solder ball connection of a package assembly including the die. Other embodiments may be described and/or claimed.