公开(公告)号：US07485873B2

公开(公告)日：2009-02-03

申请号：US11600361

申请日：2006-11-15

Applicant: Billy W. Ward ,  John A. Notte, IV ,  Louis S. Farkas, III ,  Randall G. Percival ,  Raymond Hill ,  Klaus Edinger ,  Lars Markwort ,  Dirk Aderhold ,  Ulrich Mantz

Inventor： Billy W. Ward ,  John A. Notte, IV ,  Louis S. Farkas, III ,  Randall G. Percival ,  Raymond Hill ,  Klaus Edinger ,  Lars Markwort ,  Dirk Aderhold ,  Ulrich Mantz

IPC: H01J27/02 ,  H01J27/26 ,  H01J49/10

CPC classification number: H01J37/08 ,  B82Y10/00 ,  B82Y40/00 ,  H01J27/26 ,  H01J37/20 ,  H01J37/252 ,  H01J37/28 ,  H01J37/3056 ,  H01J37/3174 ,  H01J2237/0807 ,  H01J2237/202 ,  H01J2237/20228 ,  H01J2237/2566 ,  H01J2237/2623 ,  H01J2237/2812 ,  H01J2237/30438 ,  H01J2237/3174 ,  H01J2237/31755

Abstract: Ion sources, systems and methods are disclosed.

公开(公告)号：US07452477B2

公开(公告)日：2008-11-18

申请号：US10628174

申请日：2003-07-28

Applicant: Hans Wilfried Peter Koops ,  Klaus Edinger

Inventor： Hans Wilfried Peter Koops ,  Klaus Edinger

IPC: C23F1/00

CPC classification number: H01J37/317 ,  H01J37/3056 ,  H01J2237/31744

Abstract: The invention relates to a procedure for etching of materials at the surface by focussed electron beam induced chemical reaction at the surface, with the following steps: a) in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules and at least one first beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction takes place and forms a reaction product, which is not gaseous/not volatile—reaction step. The invention is characterized in that b) the reaction product is evaporated from said surface by an second beam of electrons, which heats the material locally to a temperature above the vaporisation temperature of the reaction product —removal step—.

Abstract translation: 本发明涉及通过聚焦电子束在表面引起的化学反应在表面上蚀刻材料的步骤，其具有以下步骤：a）在真空气氛中，待蚀刻的材料用至少一束 分子和至少一个第一电子束，由此照射的材料和分子束的分子以发生化学反应的方式被激发，并形成不是气体/非挥发性反应步骤的反应产物。 本发明的特征在于b）通过第二电子束从所述表面蒸发反应产物，其将该材料局部加热到高于反应产物 - 蒸发步骤的蒸发温度的温度。

公开(公告)号：US07238294B2

公开(公告)日：2007-07-03

申请号：US10428269

申请日：2003-05-02

Applicant: Hans Wilfried Peter Koops ,  Klaus Edinger

Inventor： Hans Wilfried Peter Koops ,  Klaus Edinger

IPC: C23F1/00

CPC classification number: H01L21/31122 ,  G03F1/74 ,  H01J37/3056 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01L21/31105

Abstract: The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reaction product is removed from the material surface-irradiation and removal step.

Abstract translation: 本发明涉及通过在所述表面处聚焦的电子束诱导的化学反应在表面处蚀刻材料的方法。 本发明的特征在于，在真空气氛中，待蚀刻的材料用至少一束分子，至少一束光子和至少一束电子照射，由此照射的材料和 分子束以使得由所述材料和所述分子组合物预定的化学反应发生并形成反应产物的方式被激发，并且从材料表面照射和去除步骤中除去所述反应产物。

公开(公告)号：US20050230621A1

公开(公告)日：2005-10-20

申请号：US11106368

申请日：2005-04-14

Applicant: Klaus Edinger ,  Josef Sellmair ,  Thorsten Hofmann

Inventor： Klaus Edinger ,  Josef Sellmair ,  Thorsten Hofmann

IPC: G01N23/00 ,  G01N23/227 ,  H01J37/02 ,  H01J37/28

CPC classification number: H01J37/026 ,  G01N23/2273 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/0044 ,  H01J2237/026

Abstract: An apparatus for investigating and/or modifying a sample with charged particles, in particular a scanning electron microscope, is provided. The apparatus comprises a beam (1, 2) of charged particles, a shielding element (10) having an opening (30) for the beam of charged particles to pass through, wherein the opening (30) is sufficiently small and the shielding element (10) sufficiently closely positioned to the surface (20) of the sample to reduce the influence of charge accumulation effects at the surface on the beam of charged particles.

Abstract translation: 提供了一种用于研究和/或修饰具有带电粒子的样品的装置，特别是扫描电子显微镜。 该设备包括带电粒子的束（1,2），具有用于带电粒子束通过的开口（30）的屏蔽元件（10），其中开口（30）足够小并且屏蔽元件 10）足够紧密地定位于样品的表面（20），以减少带电粒子束上的表面处的电荷累积效应的影响。

公开(公告)号：US20050062116A1

公开(公告)日：2005-03-24

申请号：US10495632

申请日：2002-11-08

Applicant: Klaus Edinger ,  Ivajlo Rangelow ,  Grabiec Piotr ,  John Melngailis

Inventor： Klaus Edinger ,  Ivajlo Rangelow ,  Grabiec Piotr ,  John Melngailis

IPC: G01N27/82 ,  G01Q60/30 ,  G01Q70/10 ,  G01R1/07 ,  G01R33/06 ,  H01L29/76 ,  H01L29/94

CPC classification number: G01Q60/30 ,  G01N27/82 ,  G01Q70/10 ,  G01R1/07 ,  G01R33/06

Abstract: The invention relates to a sensor, especially for the probe of a screen probe microscope, for examining probe surfaces (40) or areas adjacent to the sensor, comprising at least one field effect transistor (FET) made of at least one semiconductor material. The invention also relates to a hall sensor made of at least one semiconductor material for detecting magnetic fields and whose lateral resolution capacity can be electrically adjusted, in addition to a semiconductor electrode (28) whose electrode surface can be electrically adjusted.

Abstract translation: 本发明涉及一种用于检查探针表面（40）或与传感器相邻的区域的筛选探针显微镜的探头的传感器，其包括由至少一种半导体材料制成的至少一个场效应晶体管（FET）。 本发明还涉及一种由用于检测磁场的至少一种半导体材料制成的霍尔传感器，并且其电位调节的电极表面的半导体电极（28）可以进行电位调整。