X-ray based measurements in patterned structure

    公开(公告)号:US11099142B2

    公开(公告)日:2021-08-24

    申请号:US16037161

    申请日:2018-07-17

    Inventor: Gilad Barak

    Abstract: A method and system are presented for use in X-ray based measurements on patterned structures. The method comprises: processing data indicative of measured signals corresponding to detected radiation response of a patterned structure to incident X-ray radiation, and subtracting from said data an effective measured signals substantially free of background noise, said effective measured signals being formed of radiation components of reflected diffraction orders such that model based interpretation of the effective measured signals enables determination of one or more parameters of the patterned structure, wherein said processing comprises: analyzing the measured signals and extracting therefrom a background signal corresponding to the background noise; and applying a filtering procedure to the measured signals to subtract therefrom signal corresponding to the background signal, resulting in the effective measured signal.

    Method and system for optical metrology in patterned structures

    公开(公告)号:US10761036B2

    公开(公告)日:2020-09-01

    申请号:US16398297

    申请日:2019-04-30

    Abstract: Determining parameters of a patterned structure located on top of an underneath layered structure, where input data is provided which includes first measured data PMD being a function ƒ of spectral intensity Iλ and phase ϕ, PMD=ƒ(Iλ; ϕ), corresponding to a complex spectral response of the underneath layered structure, and second measured data Smeas indicative of specular reflection spectral response of a sample formed by the patterned structure and the underneath layered structure, and where a general function F is also provided describing a relation between a theoretical optical response Stheor of the sample and a modeled optical response Smodel of the patterned structure and the complex spectral response PMD of the underneath layered structure, such that Stheor=F(Smodel; PMD), where the general function is then utilized for comparing the second measured data Smeas and the theoretical optical response Stheor, and determining parameter(s) of interest of the top structure.

    Optical system and method for measurements of samples

    公开(公告)号:US10739277B2

    公开(公告)日:2020-08-11

    申请号:US16094547

    申请日:2016-04-21

    Abstract: A measurement system is presented for use in metrology measurements on patterned samples. The system comprises: at least one light source device configured to generate broadband light, at least one detection device configured to provide spectral information of detected light, and an optical system. The optical system comprises at least an oblique channel system for directing incident light generated by the light source(s) along an oblique illumination channel onto a measurement plane, on which a sample is to be located, and directing broadband light specularly reflected from the sample along a collection channel to the detection device(s). The optical system further comprises an interferometric unit comprising a beam splitting/combining device and a reference reflector device. The beam splitting/combining device is accommodated in the illumination and collection channels and divides light propagating in the illumination channel into sample and reference light beams propagating in sample and reference paths, and combines reflected reference and sample paths into the collection channel to thereby create a spectral interference pattern on a detection plane.

    Measuring complex structures in semiconductor fabrication

    公开(公告)号:US10664638B1

    公开(公告)日:2020-05-26

    申请号:US16221631

    申请日:2018-12-17

    Abstract: Measuring SRAM structures having FinFET transistors by obtaining, on a production semiconductor wafer, spectra of a SRAM production structure including FinFET fins and gates, identifying SRAM reference structure spectra corresponding to the spectra, the reference structure from measuring, on a reference semiconductor wafer, a reference structure including a layout of FinFET fins having gates, injecting, into an OCD model of the production structure, fin target parameter values, corresponding to the identified reference structure spectra, from measuring, on the reference wafer, a fin target including a layout of exposed FinFET fins lacking gates similar or identical to the reference structure layout, correspondence between the fin target parameter values and the reference structure spectra previously identified by ML, and determining measurement values for the FinFET gates of the production structure by fitting reference spectra associated with the production structure in the OCD model to the production structure spectra.

    Optical critical dimension metrology

    公开(公告)号:US10365163B2

    公开(公告)日:2019-07-30

    申请号:US16053210

    申请日:2018-08-02

    Abstract: A metrology system is presented for measuring parameters of a structure. The system comprises: an optical system and a control unit. The optical system is configured for detecting light reflection of incident radiation from the structure and generating measured data indicative of angular phase of the detected light components corresponding to reflections of illuminating light components having different angles of incidence. The control unit is configured for receiving and processing the measured data and generating a corresponding phase map indicative of the phase variation along at least two dimensions, and analyzing the phase map using modeled data for determining one or more parameters of the structure.

    Scatterometry method and system
    36.
    发明授权

    公开(公告)号:US10302414B2

    公开(公告)日:2019-05-28

    申请号:US14852897

    申请日:2015-09-14

    Abstract: A method and system are presented for use in model-based optical measurements in patterned structures. The method comprises: selecting an optimal optical model for interpretation of optical measured data indicative of optical response of the structure under measurements. The selection of the optimal optical model comprises: creating a complete optical model with floating parameters defining multiple configurations of said complete model including one or more model configurations describing an optical response of the structure under measurements, utilizing the complete model for predicting a reference optical response from the structure and generating corresponding virtual reference data, and using the virtual reference data for selecting the optimal optical model for interpretation of the optical measured data.

    Optical metrology for in-situ measurements

    公开(公告)号:US10197506B2

    公开(公告)日:2019-02-05

    申请号:US15915613

    申请日:2018-03-08

    Abstract: A method and system are presented for use in controlling a process applied to a patterned structure having regions of different layered stacks. The method comprises: sequentially receiving measured data indicative of optical response of the structure being processed during a predetermined processing time, and generating a corresponding sequence of data pieces measured over time; and analyzing and processing the sequence of the data pieces and determining at least one main parameter of the structure. The analyzing and processing comprises: processing a part of said sequence of the data pieces and obtaining data indicative of one or more parameters of the structure; utilizing said data indicative of said one or more parameters of the structure and optimizing model data describing a relation between an optical response of the structure and one or more parameters of the structure; utilizing the optimized model data for processing at least a part of the sequence of the measured data pieces, and determining at least one parameters of the structure characterizing said process applied to the structure, and generating data indicative thereof.

    X-RAY BASED MEASUREMENTS IN PATTERNED STRUCTURE

    公开(公告)号:US20190033236A1

    公开(公告)日:2019-01-31

    申请号:US16037161

    申请日:2018-07-17

    Inventor: Gilad BARAK

    Abstract: A method and system are presented for use in X-ray based measurements on patterned structures. The method comprises: processing data indicative of measured signals corresponding to detected radiation response of a patterned structure to incident X-ray radiation, and subtracting from said data an effective measured signals substantially free of background noise, said effective measured signals being formed of radiation components of reflected diffraction orders such that model based interpretation of the effective measured signals enables determination of one or more parameters of the patterned structure, wherein said processing comprises: analyzing the measured signals and extracting therefrom a background signal corresponding to the background noise; and applying a filtering procedure to the measured signals to subtract therefrom signal corresponding to the background signal, resulting in the effective measured signal.

    METHOD AND SYSTEM FOR PROCESSING PATTERNED STRUCTURES

    公开(公告)号:US20190027386A1

    公开(公告)日:2019-01-24

    申请号:US16067202

    申请日:2016-12-29

    Inventor: Igor TUROVETS

    Abstract: A system and method are presented for controlling a process applied to a structure comprising at least one of material removal and material deposition processes. The system comprises: a heating radiation source configured and operable to generate a temperature field profile across a processing area of the structure; and a control unit configured and operable to control operation of said heating radiation source in accordance with a predetermined pattern map within the processing area, so as to create a corresponding pattern selective profile of said temperature field across said processing area providing desired pattern selective distribution of at least one parameter characterizing the process applied to the processing area of the structure.

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