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公开(公告)号：US20160318148A1
公开(公告)日：2016-11-03
申请号：US15108855
申请日：2014-07-31
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor： Igor TUROVETS
IPC: B24B37/20 , H01L21/321
CPC classification number: B24B37/20 , B24B37/015 , B24B37/04 , H01L21/268 , H01L21/31055 , H01L21/31111 , H01L21/32125 , H01L21/67219 , H01L22/12 , H01L22/26
Abstract: A surface planarization system is presented. The system comprises an external energy source for generating a localized energy distribution within a processing region, and a control unit for operating the external energy source to create, by the localized energy distribution, a predetermined temperature pattern within the processing region such that different locations of the processing region are subjected to different temperatures. This provides that when a sample (e.g. semiconductor wafer) during its interaction with an etching material composition is located in the processing region, the temperature pattern at different locations of the sample's surface creates different material removal rates by the etching material composition (different etch rates).
Abstract translation: 提出了一种表面平面化系统。 该系统包括用于在处理区域内产生局部能量分布的外部能量源，以及控制单元，用于操作外部能量源，以通过局部能量分布产生处理区域内的预定温度模式， 处理区域经受不同的温度。 这提供了当样品（例如半导体晶片）在与蚀刻材料组合物相互作用期间位于处理区域中时，样品表面的不同位置处的温度图案通过蚀刻材料组成产生不同的材料去除速率（不同的蚀刻速率 ）。
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公开(公告)号：US20180029189A9
公开(公告)日：2018-02-01
申请号：US15108855
申请日：2014-12-31
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor： Igor TUROVETS
IPC: B24B37/20 , H01L21/321
CPC classification number: B24B37/20 , B24B37/015 , B24B37/04 , H01L21/268 , H01L21/31055 , H01L21/31111 , H01L21/32125 , H01L21/67219 , H01L22/12 , H01L22/26
Abstract: A surface planarization system is presented. The system comprises an external energy source for generating a localized energy distribution within a processing region, and a control unit for operating the external energy source to create, by the localized energy distribution, a predetermined temperature pattern within the processing region such that different locations of the processing region are subjected to different temperatures. This provides that when a sample (e.g. semiconductor wafer) during its interaction with an etching material composition is located in the processing region, the temperature pattern at different locations of the sample's surface creates different material removal rates by the etching material composition (different etch rates).
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公开(公告)号：US20170363970A1
公开(公告)日：2017-12-21
申请号：US15534187
申请日：2015-12-10
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor： Oded COHEN , Gilad BARAK , Igor TUROVETS
CPC classification number: G03F7/70625 , G03F7/70466 , G03F7/70683 , H01L22/30 , H01L22/34
Abstract: A test structure and method of its manufacture are presented for use in metrology measurements of a sample pattern. The test structure comprises a test pattern comprising a portion of the sample pattern including at least one selected feature and a blocking layer at least partially covering regions of the test structure adjacent to the at least one selected region
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4.发明申请TEST STRUCTURES AND METROLOGY TECHNIQUE UTILIZING THE TEST STRUCTURES FOR MEASURING IN PATTERNED STRUCTURES 审中-公开使用结构测量的测试结构和方法技术用于测量结构的测试结构公开(公告)号：US20170023357A1
公开(公告)日：2017-01-26
申请号：US15124445
申请日：2015-03-10
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor： Igor TUROVETS
IPC: G01B11/27 , H01L21/033 , G01N21/95 , H01L21/66 , G01N21/956 , G01N21/47
CPC classification number: G01B11/272 , G01B2210/56 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/95607 , G01N2021/95615 , G01N2201/12753 , H01L21/0337 , H01L22/30
Abstract: An article is presented configured for controlling a multiple patterning process, such as a spacer self-aligned multiple patterning, to produce a target pattern. The article comprises a test site carrying a test structure comprising at least one pair of gratings, wherein first and second gratings of the pair are in the form of first and second patterns of alternating features and spaces and differ from the target pattern by respectively different first and second values which are selected to provide together a total difference such that a differential optical response from the test structure is indicative of a pitch walking effect.
Abstract translation: 呈现配置用于控制多个图案化工艺（例如间隔件自对准多重图案化）以产生目标图案的制品。 所述物品包括承载包括至少一对光栅的测试结构的测试位置，其中所述一对光栅中的第一和第二光栅具有交替特征和空间的第一和第二图案的形式，并且不同于目标图案分别不同的第一 以及第二值，其被选择以一起提供总差，使得来自测试结构的差分光学响应指示音调行走效果。
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Patent Agency Ranking
公开(公告)号：US20180195975A1
公开(公告)日：2018-07-12
申请号：US15915613
申请日：2018-03-08
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor： Igor TUROVETS , Cornel BOZDOG , Dario ELYASI
CPC classification number: G01N21/9501 , G01B11/06 , G01B11/24 , G01B2210/56 , G01N21/47 , G01N21/8903 , G01N2201/12
Abstract: A method and system are presented for use in controlling a process applied to a patterned structure having regions of different layered stacks. The method comprises: sequentially receiving measured data indicative of optical response of the structure being processed during a predetermined processing time, and generating a corresponding sequence of data pieces measured over time; and analyzing and processing the sequence of the data pieces and determining at least one main parameter of the structure. The analyzing and processing comprises: processing a part of said sequence of the data pieces and obtaining data indicative of one or more parameters of the structure; utilizing said data indicative of said one or more parameters of the structure and optimizing model data describing a relation between an optical response of the structure and one or more parameters of the structure; utilizing the optimized model data for processing at least a part of the sequence of the measured data pieces, and determining at least one parameters of the structure characterizing said process applied to the structure, and generating data indicative thereof.
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公开(公告)号：US20170167987A1
公开(公告)日：2017-06-15
申请号：US15385495
申请日：2016-12-20
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor： Igor TUROVETS , Cornel BOZDOG , Dario ELYASI
CPC classification number: G01N21/9501 , G01B11/06 , G01B11/24 , G01B2210/56 , G01N21/47 , G01N21/8903 , G01N2201/12
Abstract: A method and system are presented for use in controlling a process applied to a patterned structure having regions of different layered stacks. The method comprises: sequentially receiving measured data indicative of optical response of the structure being processed during a predetermined processing time, and generating a corresponding sequence of data pieces measured over time; and analyzing and processing the sequence of the data pieces and determining at least one main parameter of the structure. The analyzing and processing comprises: processing a part of said sequence of the data pieces and obtaining data indicative of one or more parameters of the structure; utilizing said data indicative of said one or more parameters of the structure and optimizing model data describing a relation between an optical response of the structure and one or more parameters of the structure; utilizing the optimized model data for processing at least a part of the sequence of the measured data pieces, and determining at least one parameters of the structure characterizing said process applied to the structure, and generating data indicative thereof.
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公开(公告)号：US20230131932A1
公开(公告)日：2023-04-27
申请号：US17904872
申请日：2021-02-23
Inventor： Dexin KONG , DANIEL SCHMIDT , Aron J. CEPLER , Marjorie CHENG , Roy KORET , Igor TUROVETS
Abstract: A method, a system, and a non-transitory computer readable medium for measuring a local critical dimension uniformity of an array of two-dimensional structural elements, the method may include obtaining an acquired optical spectrometry spectrum of the array; feeding the acquired optical spectrometry spectrum of the array to a trained machine learning process, wherein the trained machine learning process is trained to map an optical spectrometry spectrum to an average critical dimension (CD) and a local critical dimension uniformity (LCDU); and outputting, by the trained machine learning process, the average CD and the LCDU of the array.
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公开(公告)号：US20190027386A1
公开(公告)日：2019-01-24
申请号：US16067202
申请日：2016-12-29
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor： Igor TUROVETS
IPC: H01L21/67 , H01L21/3105 , H01L21/321 , H01L21/66
Abstract: A system and method are presented for controlling a process applied to a structure comprising at least one of material removal and material deposition processes. The system comprises: a heating radiation source configured and operable to generate a temperature field profile across a processing area of the structure; and a control unit configured and operable to control operation of said heating radiation source in accordance with a predetermined pattern map within the processing area, so as to create a corresponding pattern selective profile of said temperature field across said processing area providing desired pattern selective distribution of at least one parameter characterizing the process applied to the processing area of the structure.
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公开(公告)号：US20170146465A1
公开(公告)日：2017-05-25
申请号：US15319830
申请日：2015-06-18
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor： Gilad BARAK , Oded COHEN , Igor TUROVETS
IPC: G01N21/956 , G01N21/88 , H01L21/66 , G01N21/95
CPC classification number: G01N21/95607 , G01B2210/56 , G01N21/8806 , G01N21/9501 , G01N21/956 , G01N2021/8848 , H01L22/30
Abstract: A test structure is presented for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis. The test structure comprises a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some features of the main pattern, parameters of which are to be controlled during metrology measurements.
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