公开(公告)号：US12191198B2

公开(公告)日：2025-01-07

申请号：US17002220

申请日：2020-08-25

Applicant: Applied Materials, Inc.

Inventor： Feihu Wang ,  Joung Joo Lee ,  Xi Cen ,  Zhibo Yuan ,  Wei Lei ,  Kai Wu ,  Chunming Zhou ,  Zhebo Chen

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L21/02 ,  H01L23/528

Abstract: Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.

公开(公告)号：US12159804B2

公开(公告)日：2024-12-03

申请号：US17654077

申请日：2022-03-09

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Kai Wu ,  Dixiong Wang ,  Yi Luo

IPC: H01L21/768 ,  C23C16/14 ,  H01L23/532 ,  H01L21/285

Abstract: A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.

公开(公告)号：US12037682B2

公开(公告)日：2024-07-16

申请号：US17814653

申请日：2022-07-25

Applicant: Applied Materials, Inc.

Inventor： Peiqi Wang ,  Cheng Cheng ,  Kai Wu ,  Insu Ha ,  Sang Jin Lee

IPC: C23C16/06 ,  C23C16/04 ,  C23C16/38 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C16/38 ,  C23C16/042 ,  C23C16/45553 ,  C23C16/56

Abstract: A method of forming a structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The method includes disposing a nucleation layer along sidewalls of the opening, wherein nucleation layer includes boron and tungsten. Disposing the fill layer over the nucleation layer within the opening, wherein a tungsten-containing layer includes a resistivity of about 16 μΩ·cm or less, wherein a tungsten-containing layer has a thickness of about 200 Å to about 600 Å, and wherein a tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.

公开(公告)号：US20220270871A1

公开(公告)日：2022-08-25

申请号：US17742712

申请日：2022-05-12

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/768

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US09051655B2

公开(公告)日：2015-06-09

申请号：US14028099

申请日：2013-09-16

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Sang Ho Yu ,  Kie Jin Park ,  Glen T. Mori ,  Joshua Collins

IPC: B44C1/22 ,  C23F1/00 ,  C23F3/00 ,  C23F4/00 ,  H01J37/32

CPC classification number: C23F4/00 ,  C23G5/00 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/02068

Abstract: Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.

Abstract translation: 本文描述的实施例通常提供了一种用于执行半导体预清洗处理的方法。 更具体地，本文提供的实施方案涉及用于氧化铝蚀刻增强的硼电离。 从铝中除去天然氧化物的方法可以单独使用电离硼或与卤素等离子体组合使用。 电离硼可以提供改进的氧化铝蚀刻性质，同时更通常地对天然氧化物具有高选择性。

公开(公告)号：US08617985B2

公开(公告)日：2013-12-31

申请号：US13660463

申请日：2012-10-25

Applicant: Applied Materials, Inc.

Inventor： Joshua Collins ,  Murali K. Narasimhan ,  Jingjing Liu ,  Sang-Hyeob Lee ,  Kai Wu ,  Avgerinos V. Gelatos

IPC: H01L21/44

CPC classification number: H01L21/76876 ,  H01L21/743 ,  H01L21/76814 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76877 ,  H01L23/53266 ,  H01L27/10885 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.). Subsequently, the method includes optionally forming a nucleation layer on the tungsten barrier layer, optionally exposing the tungsten barrier layer and/or the nucleation layer to a reducing agent during soak processes, and forming a tungsten bulk layer on or over the tungsten barrier layer and/or the nucleation layer.

Abstract translation: 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 在一个实施例中，在基板上形成含钨材料的方法包括在设置在基板上的电介质层上形成含有氮化钛的粘合层，在粘合层上形成氮化钨中间层，其中氮化钨中间层 含有氮化钨和碳。 该方法还包括在热退火过程中（例如，从约700℃至小于1000℃的温度）通过热分解从氮化钨中间层形成钨阻挡层（例如，钨或钨 - 碳材料） ）。 随后，该方法包括任选地在钨阻挡层上形成成核层，任选地在浸泡过程期间将钨阻挡层和/或成核层暴露于还原剂，以及在钨阻挡层上或之上形成钨体层，以及 /或成核层。