公开(公告)号：US11776806B2

公开(公告)日：2023-10-03

申请号：US17742712

申请日：2022-05-12

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/768

CPC classification number: H01L21/02063 ,  H01L21/0234 ,  H01L21/02244 ,  H01L21/02334 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76879

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US11355391B2

公开(公告)日：2022-06-07

申请号：US16803842

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Feiyue Ma ,  Kai Wu ,  Yu Lei ,  Kazuya Daito ,  Yi Xu ,  Vikash Banthia ,  Mei Chang ,  He Ren ,  Raymond Hoiman Hung ,  Yakuan Yao ,  Avgerinos V. Gelatos ,  David T. Or ,  Jing Zhou ,  Guoqiang Jian ,  Chi-Chou Lin ,  Yiming Lai ,  Jia Ye ,  Jenn-Yue Wang

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3213

Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

公开(公告)号：US20210214842A1

公开(公告)日：2021-07-15

申请号：US17140419

申请日：2021-01-04

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Seshadri Ganguli ,  Xi Cen

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/18 ,  C23C16/455 ,  H01L21/768

Abstract: Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.

公开(公告)号：US12094773B2

公开(公告)日：2024-09-17

申请号：US17857341

申请日：2022-07-05

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Kai Wu ,  Min Heon ,  Wei Min Chan ,  Tom Ho Wing Yu ,  Peiqi Wang ,  Ju Ik Kang ,  Feihu Wang ,  Nobuyuki Sasaki ,  Chunming Zhou

IPC: H01L21/768 ,  C23C16/04 ,  H01L21/02

CPC classification number: H01L21/76879 ,  C23C16/045 ,  H01L21/0262

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

公开(公告)号：US20220333232A1

公开(公告)日：2022-10-20

申请号：US17850022

申请日：2022-06-27

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Seshadri Ganguli ,  Xi Cen

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/18 ,  C23C16/455 ,  H01L21/768

Abstract: Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.

公开(公告)号：US11380536B2

公开(公告)日：2022-07-05

申请号：US16867554

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/768

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US11798845B2

公开(公告)日：2023-10-24

申请号：US17082602

申请日：2020-10-28

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Kai Wu ,  Min Heon ,  Wei Min Chan ,  Tom Ho Wing Yu ,  Peiqi Wang ,  Ju Ik Kang ,  Feihu Wang ,  Nobuyuki Sasaki ,  Chunming Zhou

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/04

CPC classification number: H01L21/76879 ,  C23C16/045 ,  H01L21/0262

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

公开(公告)号：US20220325410A1

公开(公告)日：2022-10-13

申请号：US17847351

申请日：2022-06-23

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Liqi Wu ,  Joung Joo Lee ,  Kai Wu ,  Xi Cen ,  Wei Lei ,  Sang Ho Yu ,  Seshadri Ganguli

IPC: C23C16/455 ,  C23C28/02 ,  C23C16/02 ,  H01L21/02

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

公开(公告)号：US20220068709A1

公开(公告)日：2022-03-03

申请号：US17002220

申请日：2020-08-25

Applicant: Applied Materials, Inc.

Inventor： Feihu Wang ,  Joung Joo Lee ,  Xi Cen ,  Zhibo Yuan ,  Wei Lei ,  Kai Wu ,  Chunming Zhou ,  Zhebo Chen

IPC: H01L21/768 ,  H01L23/532

Abstract: Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.

公开(公告)号：US20210351032A1

公开(公告)日：2021-11-11

申请号：US16867554

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Keyvan Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/67

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.