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    SELECTIVE DEPOSITION
    31.
    发明申请
    SELECTIVE DEPOSITION 有权
    选择性沉积

    公开(公告)号：US20160222504A1

    公开(公告)日：2016-08-04

    申请号：US15013637

    申请日：2016-02-02

    Applicant: ASM IP HOLDING B.V.

    Inventor： Suvi P. Haukka ,  Eva Tois

    IPC: C23C16/04 ,  C23C16/56 ,  C23C16/18 ,  C23C16/02 ,  C23C16/40 ,  C23C16/34

    CPC classification number: C23C16/04 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/402 ,  C23C16/45525

    Abstract: Methods are provided for selectively depositing a surface of a substrate relative to a second, different surface. An exemplary deposition method can include selectively depositing a material, such as a material comprising nickel, nickel nitride, cobalt, iron, and/or titanium oxide on a first surface, such as a SiO2 surface, relative to a second, different surface, such as a H-terminated surface, of the same substrate. Methods can include treating a surface of the substrate to provide H-terminations prior to deposition.

    Abstract translation: 提供了用于相对于第二不同表面选择性地沉积衬底的表面的方法。 示例性的沉积方法可以包括相对于第二不同的表面选择性地沉积诸如包含镍，氮化镍，钴，铁和/或氧化钛的材料在诸如SiO 2表面的第一表面上，例如 作为H终止的表面，具有相同的底物。 方法可以包括在沉积之前处理基底的表面以提供H终止。

    Selective deposition using hydrophobic precursors
    32.
    发明授权
    Selective deposition using hydrophobic precursors 有权

    公开(公告)号：US12080548B2

    公开(公告)日：2024-09-03

    申请号：US17370263

    申请日：2021-07-08

    Applicant: ASM IP HOLDING B.V.

    Inventor： Elina Färm ,  Hidemi Suemori ,  Raija H. Matero ,  Antti Niskanen ,  Suvi P. Haukka ,  Eva Tois

    IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/32

    CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/32

    Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyurea or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

    SELECTIVE DEPOSITION OF ORGANIC MATERIAL
    34.
    发明申请
    SELECTIVE DEPOSITION OF ORGANIC MATERIAL 有权

    公开(公告)号：US20230098114A1

    公开(公告)日：2023-03-30

    申请号：US17936607

    申请日：2022-09-29

    Applicant: ASM IP Holding, B.V.

    Inventor： Eva Tois ,  Daniele Chiappe ,  Marko Tuominen ,  Viraj Madhiwala ,  Charles Dezelah ,  YongGyu Han ,  Anirudhan Chandrasekaran ,  Shaoren Deng

    IPC: H01L21/02

    Abstract: The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing an organic layer selectively on a substrate comprising at least two different surfaces. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber. In the method, the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms.

    SELECTIVE PEALD OF OXIDE ON DIELECTRIC
    36.
    发明申请
    SELECTIVE PEALD OF OXIDE ON DIELECTRIC 有权

    公开(公告)号：US20220076949A1

    公开(公告)日：2022-03-10

    申请号：US17450538

    申请日：2021-10-11

    Applicant: ASM IP HOLDING B.V.

    Inventor： Eva Tois ,  Viljami Pore ,  Suvi Haukka ,  Toshiya Suzuki ,  Lingyun Jia ,  Sun Ja Kim ,  Oreste Madia

    IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455

    Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.

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