公开(公告)号：US20230223255A1

公开(公告)日：2023-07-13

申请号：US18153272

申请日：2023-01-11

Applicant: ASM IP Holding, B.V.

Inventor： Steven Van Aerde ,  Wilco Verweij ,  Bert Jongbloed ,  Dieter Pierreux ,  Kelly Houben ,  Rami Khazaka ,  Frederick Aryeetey ,  Peter Westrom ,  Omar Elleuch ,  Caleb Miskin

IPC: H01L21/02 ,  C30B25/16 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68

CPC classification number: H01L21/0257 ,  C30B25/165 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L21/0262 ,  H01L21/02532

Abstract: A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing the plurality of substrates to a process chamber. A plurality of deposition cycles is executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial stack comprises a plurality of epitaxial pairs, wherein the epitaxial pairs each comprises a first epitaxial layer and a second epitaxial layer, the second epitaxial layer being different from the first epitaxial layer. Each deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer. The second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer. The first deposition pulse or the second deposition pulse further comprises a provision of a dopant precursor gas to the process chamber.

公开(公告)号：US20230197792A1

公开(公告)日：2023-06-22

申请号：US18107688

申请日：2023-02-09

Applicant: ASM IP Holding B.V.

Inventor： Lucas Petersen Barbosa Lima ,  Rami Khazaka ,  Qi Xie

IPC: H01L29/167 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L29/167 ,  H01L21/67063 ,  H01L21/02579

Abstract: Methods and systems for depositing material, such as doped semiconductor material, are disclosed. An exemplary method includes providing a substrate, forming a first doped semiconductor layer overlying the substrate, and forming a second doped semiconductor layer overlying the first doped semiconductor layer, wherein the first doped semiconductor layer comprises a first dopant and a second dopant, and wherein the second doped semiconductor layer comprises the first dopant. Structures and devices formed using the methods and systems for performing the methods are also disclosed.

公开(公告)号：US20210375622A1

公开(公告)日：2021-12-02

申请号：US17326912

申请日：2021-05-21

Applicant: ASM IP Holding B.V.

Inventor： Lucas Petersen Barbosa Lima ,  Joe Margetis ,  John Tolle ,  Rami Khazaka ,  Qi Xie

IPC: H01L21/02 ,  C30B25/04 ,  C30B29/52 ,  C30B25/18

Abstract: Methods and devices for epitaxially growing boron- and gallium-doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

公开(公告)号：US20210125827A1

公开(公告)日：2021-04-29

申请号：US17071149

申请日：2020-10-15

Applicant: ASM IP Holding B.V.

Inventor： Rami Khazaka ,  Lucas Petersen Barbosa Lima ,  Giuseppe Alessio Verni ,  Qi Xie

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67 ,  C23C16/52 ,  H01L29/36

Abstract: A method for selectively forming an n-type doped material on a surface of a substrate is disclosed. A system for performing the method and structures and devices formed using the method are also disclosed.