公开(公告)号：US12266524B2

公开(公告)日：2025-04-01

申请号：US17345458

申请日：2021-06-11

Applicant: ASM IP Holding B.V.

Inventor： Lucas Petersen Barbosa Lima ,  Rami Khazaka ,  Qi Xie

IPC: H01L21/02 ,  C30B25/04 ,  C30B25/16 ,  C30B25/18 ,  C30B29/52 ,  C30B33/12 ,  H01L29/167

Abstract: Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

公开(公告)号：US11594600B2

公开(公告)日：2023-02-28

申请号：US17084354

申请日：2020-10-29

Applicant: ASM IP Holding B.V.

Inventor： Lucas Petersen Barbosa Lima ,  Rami Khazaka ,  Qi Xie

IPC: H01L29/10 ,  H01L29/167 ,  H01L21/67 ,  H01L21/02

Abstract: Methods and systems for depositing material, such as doped semiconductor material, are disclosed. An exemplary method includes providing a substrate, forming a first doped semiconductor layer overlying the substrate, and forming a second doped semiconductor layer overlying the first doped semiconductor layer, wherein the first doped semiconductor layer comprises a first dopant and a second dopant, and wherein the second doped semiconductor layer comprises the first dopant. Structures and devices formed using the methods and systems for performing the methods are also disclosed.

公开(公告)号：US20230026413A1

公开(公告)日：2023-01-26

申请号：US17960203

申请日：2022-10-05

Applicant: ASM IP Holding B.V.

Inventor： Lucas Petersen Barbosa Lima ,  Rami Khazaka ,  Qi Xie

IPC: H01L21/02 ,  H01L29/167 ,  H01L21/311

Abstract: Methods and systems for selectively depositing a p-type doped silicon germanium layer and structures and devices including a p-type doped silicon germanium layer are disclosed. An exemplary method includes providing a substrate, comprising a surface comprising a first area comprising a first material and a second area comprising a second material, within a reaction chamber; depositing a p-type doped silicon germanium layer overlying the surface, the p-type doped silicon germanium layer comprising gallium; and depositing a cap layer overlying the p-type doped silicon germanium layer. The method can further include an etch step to remove the cap layer and the p-type doped silicon germanium layer overlying the second material.

公开(公告)号：US20210020429A1

公开(公告)日：2021-01-21

申请号：US16925642

申请日：2020-07-10

Applicant: ASM IP Holding B.V

Inventor： Rami Khazaka ,  Lucas Petersen Barbosa Lima

IPC: H01L21/02 ,  H01L29/165

Abstract: Methods for forming structures that include a layer comprising silicon germanium are disclosed. Exemplary embodiments of the disclosure provide improved methods of forming a transition layer on the layer comprising silicon germanium that can mitigate any formation of an interface layer between the layer comprising silicon germanium and a subsequently formed layer comprising silicon.

公开(公告)号：US20230245888A1

公开(公告)日：2023-08-03

申请号：US18161681

申请日：2023-01-30

Applicant: ASM IP Holding, B.V.

Inventor： Wonjong Kim ,  Rami Khazaka ,  Michael Eugene Givens

IPC: H01L21/02

CPC classification number: H01L21/0262 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02661

Abstract: Methods for forming structures that include forming a heteroepitaxial layer on a substrate are disclosed. The presently disclosed methods comprise epitaxially forming a buffer layer on the substrate. The substrate has a substrate composition. The buffer layer has a buffer layer composition. The buffer layer composition is substantially identical to the substrate composition. The presently disclosed methods further comprise epitaxially forming a heteroepitaxial layer on the buffer layer. The heteroepitaxial layer has a heteroepitaxial layer composition which is different from the substrate composition.

公开(公告)号：US11688603B2

公开(公告)日：2023-06-27

申请号：US16925642

申请日：2020-07-10

Applicant: ASM IP Holding B.V.

Inventor： Rami Khazaka ,  Lucas Petersen Barbosa Lima

IPC: H01L21/02 ,  H01L29/165

CPC classification number: H01L21/0262 ,  H01L21/0245 ,  H01L21/02532 ,  H01L29/165

Abstract: Methods for forming structures that include a layer comprising silicon germanium are disclosed. Exemplary embodiments of the disclosure provide improved methods of forming a transition layer on the layer comprising silicon germanium that can mitigate any formation of an interface layer between the layer comprising silicon germanium and a subsequently formed layer comprising silicon.

公开(公告)号：US11637014B2

公开(公告)日：2023-04-25

申请号：US17064041

申请日：2020-10-06

Applicant: ASM IP Holding B.V.

Inventor： Lucas Petersen Barbosa Lima ,  Rami Khazaka ,  Qi Xie

IPC: H01L21/02 ,  C23C16/455 ,  H01L29/08

Abstract: Methods and systems for selectively depositing material, such as doped semiconductor material, are disclosed. An exemplary method includes providing a substrate, comprising a first area comprising a first material and a second area comprising a second material, selectively depositing a first doped semiconductor layer overlying the first material relative to the second material and selectively depositing a second doped semiconductor layer overlying the first doped semiconductor layer relative to the second material.

公开(公告)号：US20210134959A1

公开(公告)日：2021-05-06

申请号：US17084354

申请日：2020-10-29

Applicant: ASM IP Holding B.V.

Inventor： Lucas Petersen Barbosa Lima ,  Rami Khazaka ,  Qi Xie

IPC: H01L29/167 ,  H01L21/02 ,  H01L21/67

Abstract: Methods and systems for depositing material, such as doped semiconductor material, are disclosed. An exemplary method includes providing a substrate, forming a first doped semiconductor layer overlying the substrate, and forming a second doped semiconductor layer overlying the first doped semiconductor layer, wherein the first doped semiconductor layer comprises a first dopant and a second dopant, and wherein the second doped semiconductor layer comprises the first dopant. Structures and devices formed using the methods and systems for performing the methods are also disclosed.

公开(公告)号：US20210066079A1

公开(公告)日：2021-03-04

申请号：US16998220

申请日：2020-08-20

Applicant: ASM IP Holding B.V.

Inventor： Lucas Petersen Barbosa Lima ,  Rami Khazaka ,  Qi Xie

IPC: H01L21/02 ,  H01L21/311 ,  H01L29/167

Abstract: Methods and systems for selectively depositing a p-type doped silicon germanium layer and structures and devices including a p-type doped silicon germanium layer are disclosed. An exemplary method includes providing a substrate, comprising a surface comprising a first area comprising a first material and a second area comprising a second material, within a reaction chamber; depositing a p-type doped silicon germanium layer overlying the surface, the p-type doped silicon germanium layer comprising gallium; and depositing a cap layer overlying the p-type doped silicon germanium layer. The method can further include an etch step to remove the cap layer and the p-type doped silicon germanium layer overlying the second material.

公开(公告)号：US20240213022A1

公开(公告)日：2024-06-27

申请号：US18545699

申请日：2023-12-19

Applicant: ASM IP Holding B.V.

Inventor： Brendan Marozas ,  Rami Khazaka ,  Gregory Deye

IPC: H01L21/02 ,  C30B25/16 ,  C30B25/20 ,  C30B29/06 ,  H01L21/3065

CPC classification number: H01L21/0257 ,  C30B25/165 ,  C30B25/205 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/30655

Abstract: A method for epitaxially growing a phosphorus doped silicon layer on a substrate is disclosed. Embodiments of the presently described method comprise exposing a substrate to a silicon precursor and to a phosphorus precursor, wherein the exposure of the substrate to the phosphorus precursor is done during an overlapping period with the exposure to the silicon precursor.