公开(公告)号：US20250037989A1

公开(公告)日：2025-01-30

申请号：US18907769

申请日：2024-10-07

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Shuaidi Zhang ,  Mihaela A. Balseanu ,  Qi Gao ,  Rajesh Prasad ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Deven Matthew Raj Mittal ,  Kyu-Ha Shim

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/56 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.

公开(公告)号：US12142475B2

公开(公告)日：2024-11-12

申请号：US17667704

申请日：2022-02-09

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Shuaidi Zhang ,  Mihaela A. Balseanu ,  Qi Gao ,  Rajesh Prasad ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Deven Matthew Raj Mittal ,  Kyu-Ha Shim

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/56 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35 ,  H10B43/27

Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.

公开(公告)号：US20230096772A1

公开(公告)日：2023-03-30

申请号：US18074872

申请日：2022-12-05

Applicant: Applied Materials, Inc.

Inventor： Maribel Maldonado-Garcia ,  Cong Trinh ,  Mihaela A. Balseanu ,  Kevin Griffin ,  Ning Li ,  Zohreh Razavi Hesabi

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  C23C16/34

Abstract: Apparatus and methods for supplying a vapor to a processing chamber such as a film deposition chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, in fluid communication with an ampoule. A needle valve device restricts flow through the outlet conduit.

公开(公告)号：US11515151B2

公开(公告)日：2022-11-29

申请号：US16753534

申请日：2018-10-05

Applicant: Applied Materials, Inc.

Inventor： Kurt Fredrickson ,  Atashi Basu ,  Mihaela Balseanu ,  Ning Li

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40

Abstract: Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.

公开(公告)号：US11447865B2

公开(公告)日：2022-09-20

申请号：US16950096

申请日：2020-11-17

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Thomas Knisley

IPC: C23C16/32 ,  C23C16/455 ,  C01B32/907 ,  C01B21/082 ,  C23C16/34 ,  C23C16/36 ,  C23C16/30

Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R9, R10, R11, R12 R13, R14, R15, and R16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

公开(公告)号：US11371144B2

公开(公告)日：2022-06-28

申请号：US16897490

申请日：2020-06-10

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela Balseanu

IPC: H01L21/02 ,  H01L29/78 ,  C23C16/455 ,  C23C16/36

Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.

公开(公告)号：US11230763B2

公开(公告)日：2022-01-25

申请号：US16744560

申请日：2020-01-16

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Steven D. Marcus ,  Tai T. Ngo ,  Kevin Griffin

IPC: C23C16/44 ,  C23C16/455

Abstract: Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

公开(公告)号：US20210404058A1

公开(公告)日：2021-12-30

申请号：US16910825

申请日：2020-06-24

Applicant: Applied Materials, Inc.

Inventor： Maribel Maldonado-Garcia ,  Cong Trinh ,  Mihaela A. Balseanu ,  Kevin Griffin ,  Ning Li ,  Zohreh Razavi Hesabi

IPC: C23C16/448 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

Abstract: Apparatus and methods for supplying a vapor to a processing chamber such as a film deposition chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, in fluid communication with an ampoule. A needle valve device restricts flow through the outlet conduit.

公开(公告)号：US11164753B2

公开(公告)日：2021-11-02

申请号：US14595595

申请日：2015-01-13

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Keiichi Tanaka ,  Steven D. Marcus

IPC: H01L21/311 ,  H01L21/033 ,  H01J37/32 ,  H01L21/687 ,  C23C16/455

Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

公开(公告)号：US20210230747A1

公开(公告)日：2021-07-29

申请号：US16752678

申请日：2020-01-26

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela Balseanu

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/06 ,  C23C16/458

Abstract: Methods of selectively forming SiCON films are described. In some embodiments, the methods comprise sequential exposure to a silicon halide, a mixture of alkanolamine and amine reactants and a deposition plasma. In some embodiments, the method further comprises pre-cleaning the target substrate to improve selectivity.