公开(公告)号：US09653352B2

公开(公告)日：2017-05-16

申请号：US14300773

申请日：2014-06-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Liqi Wu ,  Sang Ho Yu ,  Kazuya Daito ,  Kie Jin Park ,  Kai Wu ,  David Thompson

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/04 ,  C23C16/06 ,  C23C16/455

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/06 ,  C23C16/45536 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876

Abstract: Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.

公开(公告)号：US12024770B2

公开(公告)日：2024-07-02

申请号：US16535499

申请日：2019-08-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Chang Ke ,  Wenyu Zhang ,  Liqi Wu

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/08 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C16/18 ,  C23C16/0281 ,  C23C16/04 ,  C23C16/08 ,  C23C16/45525

Abstract: Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.

公开(公告)号：US20230326744A1

公开(公告)日：2023-10-12

申请号：US17714510

申请日：2022-04-06

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Yixiong Yang ,  Srinivas Gandikota ,  Joung Joo Lee ,  Liqi Wu ,  Jie Zhang ,  Tuerxun Ailihumaer ,  Yogesh Sharma

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/02266 ,  H01L21/02244 ,  H01L21/76879

Abstract: Embodiments of the disclosure relate to methods for bottom-up metal gapfill without substantial deposition outside of the feature. Additional embodiments provide a method of forming a metal material on the top surface of the substrate and the bottom of the feature before depositing the metal gapfill. The disclosed methods

公开(公告)号：US11735420B2

公开(公告)日：2023-08-22

申请号：US17014975

申请日：2020-09-08

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/683 ,  H01L21/32

CPC classification number: H01L21/0271 ,  H01L21/0206 ,  H01L21/0228 ,  H01L21/02057 ,  H01L21/02181 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/3105 ,  H01L21/67207 ,  H01L21/32 ,  H01L21/6831

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

公开(公告)号：US20230187282A1

公开(公告)日：2023-06-15

申请号：US17551381

申请日：2021-12-15

Applicant: Applied Materials, Inc.

Inventor： Thomas Anthony Empante ,  Avgerinos V. Gelatos ,  Zhibo Yuan ,  Liqi Wu ,  Joung Joo Lee ,  Byunghoon Yoon

IPC: H01L21/8238 ,  H01L27/092

CPC classification number: H01L21/823814 ,  H01L27/092 ,  H01L21/76843

Abstract: Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor. The substrate may be pre-cleaned. A ruthenium silicide (RuSi) layer is selectively deposited on the p transistor. A titanium silicide (TiSi) layer is formed on the n transistor and the p transistor. An optional barrier layer may be formed on the titanium silicide (TiSi) layer. The method may be performed in a processing chamber without breaking vacuum.

公开(公告)号：US20220325410A1

公开(公告)日：2022-10-13

申请号：US17847351

申请日：2022-06-23

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Liqi Wu ,  Joung Joo Lee ,  Kai Wu ,  Xi Cen ,  Wei Lei ,  Sang Ho Yu ,  Seshadri Ganguli

IPC: C23C16/455 ,  C23C28/02 ,  C23C16/02 ,  H01L21/02

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

公开(公告)号：US20220231137A1

公开(公告)日：2022-07-21

申请号：US17152190

申请日：2021-01-19

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Wenting Hou ,  Takashi Kuratomi ,  Avgerinos V. Gelatos ,  Jianxin Lei ,  Liqi Wu ,  Raymond Hoiman Hung ,  Tae Hong Ha ,  Xianmin Tang

IPC: H01L29/417 ,  H01L21/285 ,  H01L21/8234

Abstract: A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a substrate; in the absence of an air break after the depositing of the metal silicide layer, preparing a metal cap layer directly on the metal silicide layer; and depositing a conductor on the metal cap layer.

公开(公告)号：US20210217615A1

公开(公告)日：2021-07-15

申请号：US17197866

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Michael S. Jackson ,  Liqi Wu ,  Lei Zhou ,  Shuyi Zhang ,  David Thompson ,  Paul F. Ma ,  Biao Liu ,  Cheng Pan

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/56 ,  H01L21/3105

Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

公开(公告)号：US20210189562A1

公开(公告)日：2021-06-24

申请号：US17182906

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US10957590B2

公开(公告)日：2021-03-23

申请号：US16669082

申请日：2019-10-30

Applicant: Applied Materials, Inc.

Inventor： Wenhui Wang ,  Huixiong Dai ,  Christopher S. Ngai ,  Liqi Wu ,  Wenyu Zhang ,  Yongmei Chen ,  Hao Chen ,  Keith Tatseun Wong ,  Ke Chang

IPC: H01L21/768 ,  H01L23/535 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.