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31.发明申请METHOD FOR MANUFACTURING REFLECTIVE MASK BLANK, AND METHOD FOR MANUFACTURING REFLECTIVE MASK 审中-公开用于制造反射掩模层的方法以及制造反射掩模的方法公开(公告)号：US20160004153A1
公开(公告)日：2016-01-07
申请号：US14768787
申请日：2014-02-20
Applicant: HOYA CORPORATION
Inventor： Tsutomu SHOKI , Kazuhiro HAMAMOTO , Yohei IKEBE
CPC classification number: G03F1/84 , C23C14/35 , C23C14/46 , G03F1/24 , G03F1/38 , G06T7/0004 , G06T2207/30148 , G06T2207/30204
Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.
Abstract translation: 一种制造反射掩模坯料的方法，包括形成在基板上以反射EUV光的多层反射膜; 以及形成在多层反射膜上的层叠膜。 该方法包括以下步骤：将多层反射膜沉积在衬底上以形成多层反射膜形成的衬底; 对多层反射膜形成基板进行缺陷检查; 将层叠膜沉积在多层反射膜形成基板的多层反射膜上; 形成层叠膜的上部的基准标记，从而形成包含基准标记的反射掩模坯料，基准标记作为缺陷信息中缺陷位置的基准; 并通过使用基准标记作为基准进行反射型掩模毛坯的缺陷检查。
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公开(公告)号：US20240103354A1
公开(公告)日：2024-03-28
申请号：US18526463
申请日：2023-12-01
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI , Takahiro ONOUE , Hirofumi KOZAKAI
Abstract: A reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask.
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33.发明公开公开(公告)号：US20240036458A1
公开(公告)日：2024-02-01
申请号：US18483484
申请日：2023-10-09
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
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34.发明公开公开(公告)号：US20230244135A1
公开(公告)日：2023-08-03
申请号：US17946709
申请日：2022-09-16
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI , Takahiro ONOUE , Hirofumi KOZAKAI
Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k > α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
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公开(公告)号：US20230087016A1
公开(公告)日：2023-03-23
申请号：US17990163
申请日：2022-11-18
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
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Patent Agency Ranking
公开(公告)号：US20180356719A1
公开(公告)日：2018-12-13
申请号：US15778363
申请日：2016-11-15
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI
Abstract: Provided is a reflective mask capable of reducing out-of-band light when transferring a prescribed pattern onto a wafer by exposure using EUV light in a process of manufacturing a semiconductor device. The mask blank substrate is provided with a base film on a substrate, the base film is formed with a material having a refractive index smaller than the substrate over a wavelength range of not less than 190 nm and not more than 280 nm, and reflectance of the base film arranged on the surface of the substrate is smaller than the reflectance of the substrate over a wavelength range of not less than 190 nm to not more than 280 nm.
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37.发明申请公开(公告)号：US20180348628A1
公开(公告)日：2018-12-06
申请号：US16054295
申请日：2018-08-03
Applicant: HOYA CORPORATION
Inventor： Tsutomu SHOKI , Kazuhiro HAMAMOTO , Yohei IKEBE
CPC classification number: G03F1/84 , C23C14/35 , C23C14/46 , G03F1/24 , G03F1/38 , G06T7/0004 , G06T2207/30148 , G06T2207/30204
Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.
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公开(公告)号：US20170263444A1
公开(公告)日：2017-09-14
申请号：US15508544
申请日：2015-09-14
Applicant: HOYA CORPORATION
Inventor： Tsutomu SHOKI , Tatsuo ASAKAWA , Hirofumi KOZAKAI
IPC: H01L21/027 , C23C14/46 , C23C14/58 , C23C14/00 , C23C14/35 , G03F1/76 , C23C14/34 , G03F1/24 , G03F1/54 , G03F1/48 , G03F1/80 , G03F7/20 , C23C14/18 , C23C14/06
CPC classification number: H01L21/0274 , C23C14/18 , C23C14/185 , C23C14/34 , C23C14/46 , C23C14/5806 , G03F1/24 , G03F1/48 , G03F1/54 , G03F1/76 , G03F1/80 , G03F1/86 , G03F7/2002
Abstract: The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.The present invention provides a reflective mask blank for EUV lithography in which a conductive underlying film, a multilayer reflective film that reflects exposure light, and an absorber film that absorbs exposure light are layered on a substrate, wherein the conductive underlying film is a single-layer film made of a tantalum-based material or a ruthenium-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film, or the conductive underlying film is a multilayer film including a layer of a tantalum-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film and a layer of a conductive material that is formed between the layer of the tantalum-based material and the substrate. The present invention also provides a reflective mask manufactured using the reflective mask blank. Furthermore, a semiconductor device is manufactured using the reflective mask.
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39.发明申请REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权反射掩模层，反射掩模和制造半导体器件的方法公开(公告)号：US20170038673A1
公开(公告)日：2017-02-09
申请号：US15106919
申请日：2014-11-26
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Takahiro ONOUE , Tsutomu SHOKI
CPC classification number: G03F1/24 , C23C14/0641 , C23C14/185 , G03F1/26 , G03F1/38 , G03F1/48 , G03F7/2004
Abstract: To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, the phase-shift film 16 has a tantalum-based material layer comprising tantalum, and an anti-diffusion layer 15 comprising ruthenium and oxygen is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern.
Abstract translation: 为了提供一种可以抑制由于由于热扩散而导致的保护膜和相邻相移膜图案的材料之间的反扩散的相对于EUV光的反射率变化的反射掩模板，即使曝光光源 的EUV曝光机变高; 由其制造的反射罩; 以及半导体装置的制造方法。 反射掩模坯料包括多层反射膜13，保护膜14和相移膜16，用于将在所述顺序上形成的EUV光的相位移动到基板12上。保护膜14由材料 含有钌作为主要成分时，相移膜16具有包含钽的钽基材料层，并且在保护膜14的表面上形成包含钌和氧的防扩散层15，或者作为 保护膜14在与相移层16相邻的一侧上，以便相对于相移膜16抑制反向扩散，由此抑制保护膜14与相移材料之间的热扩散 电影模式。
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公开(公告)号：US20160077423A1
公开(公告)日：2016-03-17
申请号：US14952772
申请日：2015-11-25
Applicant: HOYA CORPORATION
Inventor： Tsutomu SHOKI , Kazuhiro HAMAMOTO
Abstract: Disclosed is a method for producing a substrate with a multilayer reflective film for EUV lithography including a multilayer reflective film disposed on a principal surface of a substrate, the method including a multilayer reflective film formation step of forming the multilayer reflective film on the principal surface of the substrate in such a manner that the multilayer reflective film has a slope region in which the film thickness is decreased in a direction from the inside to the outside of the substrate on a peripheral portion of the principal surface, and a fiducial mark formation step of forming fiducial marks in the slope region by removing at least a portion of the multilayer reflective film, the fiducial marks serving as references for a defective location indicated by defect information with respect to the surface of the substrate with the multilayer reflective film.
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