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公开(公告)号：US20210255536A1
公开(公告)日：2021-08-19
申请号：US17227655
申请日：2021-04-12
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI , Takahiro ONOUE , Hirofumi KOZAKAI
Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
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公开(公告)号：US20210294202A1
公开(公告)日：2021-09-23
申请号：US17325627
申请日：2021-05-20
Applicant: HOYA CORPORATION
Inventor： Tsutomu SHOKI , Takahiro ONOUE
Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
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公开(公告)号：US20190079382A1
公开(公告)日：2019-03-14
申请号：US16084332
申请日：2017-03-21
Applicant: HOYA CORPORATION
Inventor： Tsutomu SHOKI , Takahiro ONOUE
Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
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4.发明申请SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, REFLECTIVE MASK FOR EUV LITHOGRAPHY, AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权具有多层反射膜的衬底，用于EUV光刻的反射掩模，用于EUV光刻的反射掩模及其制造方法，以及制造半导体器件的方法公开(公告)号：US20160147139A1
公开(公告)日：2016-05-26
申请号：US14906288
申请日：2014-07-15
Applicant: HOYA CORPORATION
Inventor： Takahiro ONOUE , Hirofumi KOZAKAI
CPC classification number: G03F1/24 , G03F1/48 , G03F1/76 , G03F7/2004
Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film, which gives a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on the substrate, comprising a layer that includes Si as a high refractive-index material and a layer that include a low refractive-index material, the layers being periodically laminated; a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film; and a block layer, formed between the multilayer reflective film and the Ru protective film, for preventing the migration of Si to the Ru protective film, wherein the surface layer of the multilayer reflective film opposite from the substrate is the layer comprising Si, and at least part of the Si is diffused into the block layer.
Abstract translation: 本发明的目的是提供一种具有多层反射膜的基板，其提供反射掩模以获得高反射率并且表现出优异的清洁阻力。 本发明涉及具有多层反射膜的基板，其具有：基板; 形成在所述基板上的多层反射膜，包括包含作为高折射率材料的Si的层和包含低折射率材料的层，所述层周期性地层压; 形成在多层反射膜上的用于保护多层反射膜的Ru保护膜; 以及形成在多层反射膜和Ru保护膜之间的阻挡层，用于防止Si向Ru保护膜迁移，其中与基板相反的多层反射膜的表面层是包含Si的层，并且在 Si的最少部分被扩散到阻挡层中。
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公开(公告)号：US20230133304A1
公开(公告)日：2023-05-04
申请号：US17913099
申请日：2021-03-22
Applicant: HOYA CORPORATION
Inventor： Kota SUZUKI , Masanori NAKAGAWA , Takahiro ONOUE
Abstract: Provided are a substrate with a multilayer reflective film, a reflective mask blank, a reflective mask, and a method for manufacturing a semiconductor device, having high resistance to an etching gas used for etching an absorber film and/or an etching mask film and capable of suppressing occurrence of blister.
A substrate with a multilayer reflective film 100 comprises a substrate 10, a multilayer reflective film 12 formed on the substrate 10, and a protective film 14 formed on the multilayer reflective film 12. The protective film 14 comprises ruthenium (Ru), rhodium (Rh), and at least one additive element selected from the group consisting of titanium (Ti), zirconium (Zr), yttrium (Y), niobium (Nb), vanadium (V), and hafnium (Hf).-
Patent Agency Ranking
公开(公告)号：US20210247688A1
公开(公告)日：2021-08-12
申请号：US16625569
申请日：2018-06-14
Applicant: HOYA CORPORATION
Inventor： Hirofumi KOZAKAI , Takahiro ONOUE
IPC: G03F1/24 , H01L21/033 , G03F1/58
Abstract: Provided is a substrate with multilayer reflective film used to manufacture a reflective mask having a multilayer reflective film having high reflectance with respect to exposure light and little film stress. The substrate with multilayer reflective film is provided with a multilayer reflective film for reflecting exposure light, the substrate with multilayer reflective film comprising a multilayer film obtained by building up an alternating stack of low refractive index layers and high refractive index layers on a substrate, and the multilayer reflective film contains krypton (Kr).
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7.发明申请公开(公告)号：US20190384158A1
公开(公告)日：2019-12-19
申请号：US16490018
申请日：2018-02-20
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI , Takahiro ONOUE , Hirofumi KOZAKAI
Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
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8.发明申请公开(公告)号：US20190384157A1
公开(公告)日：2019-12-19
申请号：US16490010
申请日：2018-03-01
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Junichi HORIKAWA , Takahiro ONOUE , Mizuki KATAOKA
Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).
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公开(公告)号：US20180120692A1
公开(公告)日：2018-05-03
申请号：US15829090
申请日：2017-12-01
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Takahiro ONOUE , Tsutomu SHOKI
CPC classification number: G03F1/24 , C23C14/0641 , C23C14/185 , G03F1/26 , G03F1/38 , G03F1/48 , G03F7/2004
Abstract: A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase- shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.
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公开(公告)号：US20240103354A1
公开(公告)日：2024-03-28
申请号：US18526463
申请日：2023-12-01
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI , Takahiro ONOUE , Hirofumi KOZAKAI
Abstract: A reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask.
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