公开(公告)号：US20170160350A1

公开(公告)日：2017-06-08

申请号：US15433524

申请日：2017-02-15

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Klemens Pruegl ,  Olaf Kuehn ,  Andreas Strasser ,  Ralf-Rainer Schledz ,  Norbert Thyssen

IPC: G01R33/00 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G01R33/09 ,  H01L43/12

CPC classification number: G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/096 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

公开(公告)号：US20170110505A1

公开(公告)日：2017-04-20

申请号：US15391111

申请日：2016-12-27

Applicant: Infineon Technologies AG

Inventor： Stefan Kolb ,  Klemens Pruegl ,  Juergen Zimmer

IPC: H01L27/22 ,  H01L23/522 ,  G01R33/09 ,  H01L43/12 ,  H01L23/552 ,  H01L43/08 ,  H01L23/528 ,  H01L43/02

CPC classification number: H01L27/22 ,  G01R33/07 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/552 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/12 ,  H01L43/14

Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.

公开(公告)号：US09598277B2

公开(公告)日：2017-03-21

申请号：US14832426

申请日：2015-08-21

Applicant: Infineon Technologies AG

Inventor： Bernhard Winkler ,  Andreas Zankl ,  Klemens Pruegl ,  Stefan Kolb

IPC: B81B7/00 ,  H01L27/06 ,  B81C1/00

CPC classification number: B81B7/008 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0707 ,  B81C2203/0714 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L27/0611

Abstract: Embodiments relate to MEMS devices and methods for manufacturing MEMS devices. In one embodiment, the manufacturing includes forming a monocrystalline sacrificial layer on a non-silicon-on-insulator (non-SOI) substrate, patterning the monocrystalline sacrificial layer such that the monocrystalline sacrificial layer remains in a first portion and is removed in a second portion lateral to the first portion; depositing a first silicon layer, the first silicon layer deposited on the remaining monocrystalline sacrificial layer and further lateral to the first portion; removing at least a portion of the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer to form a cavity and sealing the cavity.

公开(公告)号：US20160343392A1

公开(公告)日：2016-11-24

申请号：US14717213

申请日：2015-05-20

Applicant: Infineon Technologies AG

Inventor： Wolfgang Raberg ,  Andreas Strasser ,  Hermann Wendt ,  Klemens Pruegl

IPC: G11B5/39

CPC classification number: G11B5/3903 ,  G01R33/09 ,  G11B5/3909 ,  G11B2005/3996

Abstract: A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL and a portion of the magnetoresistive stack. The method can further include depositing a photoresist layer on the hard mask before the first etching process and removing the photoresist layer from the hard mask following the first etching process. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.

Abstract translation: 可以包括磁阻堆叠和设置在磁阻堆叠上的蚀刻停止层（ESL）的磁阻器件。 制造磁阻器件的方法可以包括：在衬底上沉积磁阻堆叠，ESL和掩模层; 执行第一蚀刻工艺以蚀刻掩模层的一部分以暴露ESL的一部分; 以及执行第二蚀刻工艺以蚀刻ESL的暴露部分和磁阻堆叠的一部分。 该方法还可以包括在第一蚀刻工艺之前在硬掩模上沉积光致抗蚀剂层，并且在第一蚀刻工艺之后从硬掩模中除去光致抗蚀剂层。 第一和第二蚀刻工艺可以不同。 例如，第一蚀刻工艺可以是反应性蚀刻工艺，第二蚀刻工艺可以是非反应性蚀刻工艺。

公开(公告)号：US20160104640A1

公开(公告)日：2016-04-14

申请号：US14511199

申请日：2014-10-10

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Klemens Pruegl

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/02527 ,  C01B32/186 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/02664 ,  H01L21/02667 ,  H01L29/1606

Abstract: According to various embodiments, a method for processing a carrier may include: co-depositing at least one metal from a first source and carbon from a second source over a surface of the carrier to form a first layer; forming a second layer over the first layer, the second layer including a diffusion barrier material, wherein the solubility of carbon in the diffusion barrier material is less than in the at least one metal; and forming a graphene layer at the surface of the carrier from the first layer by a temperature treatment.

Abstract translation: 根据各种实施例，用于处理载体的方法可以包括：在载体的表面上共同沉积来自第一源的至少一种金属和来自第二源的碳以形成第一层; 在第一层上形成第二层，第二层包括扩散阻挡材料，其中碳在扩散阻挡材料中的溶解度小于在至少一种金属中的溶解度; 以及通过温度处理从所述第一层在所述载体的表面上形成石墨烯层。

公开(公告)号：US09145292B2

公开(公告)日：2015-09-29

申请号：US14281251

申请日：2014-05-19

Applicant: Infineon Technologies AG

Inventor： Bernhard Winkler ,  Andreas Zankl ,  Klemens Pruegl ,  Stefan Kolb

IPC: H01L21/71 ,  H01L21/205 ,  H01L27/04 ,  H01L27/20 ,  B81B7/02 ,  B81B7/00 ,  B81C1/00 ,  H01L27/06

CPC classification number: B81B7/008 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0707 ,  B81C2203/0714 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L27/0611

Abstract: Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.

Abstract translation: 实施例涉及MEMS器件，特别是与单个晶片上的相关电气器件集成的MEMS器件。 实施例利用模块化工艺流程概念作为MEMS首要方法的一部分，使得能够使用新颖的腔体密封过程。 因此，通过MEMS处理对电气装置的影响和潜在的有害影响被减少或消除。 同时，提供了一种高度灵活的解决方案，可以实现各种测量原理，包括电容式和压阻式。 因此，可以在提高性能和质量的同时解决各种传感器应用，同时保持成本效益。

公开(公告)号：US20140374906A1

公开(公告)日：2014-12-25

申请号：US13921284

申请日：2013-06-19

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Klemens Pruegl

IPC: H01L21/768 ,  H01L23/498

CPC classification number: H01L21/02524 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0405 ,  H01L21/2254 ,  H01L21/7685 ,  H01L29/04 ,  H01L29/0669 ,  H01L29/1075 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/66037 ,  H01L29/778

Abstract: In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.

Abstract translation: 在各种实施例中，提供了一种处理载体的方法。 用于处理载体的方法可以包括：在载体上形成第一催化金属层; 在所述第一催化金属层上形成源层; 在所述源层上形成第二催化金属层，其中所述第二催化金属层的厚度大于所述第一催化金属层的厚度; 并且随后进行退火以使源层的材料与源层的扩散材料形成与载体表面相邻的界面层的扩散。

公开(公告)号：US11892526B2

公开(公告)日：2024-02-06

申请号：US17324446

申请日：2021-05-19

Applicant: Infineon Technologies AG

Inventor： Bernhard Endres ,  Klemens Pruegl

IPC: G01R33/09 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85 ,  H01F10/32 ,  H01F41/30 ,  G01R33/00

CPC classification number: G01R33/093 ,  G01R33/098 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/307 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85 ,  G01R33/0052 ,  Y10T428/1114

Abstract: Exemplary embodiments are directed to magnetoresistive sensors and corresponding fabrication methods for magnetoresistive sensors. One example of a magnetoresistive sensor includes a layer stack, wherein the layer stack includes a reference layer having a fixed reference magnetization, wherein the fixed reference magnetization has a first magnetic orientation. The layer stack furthermore includes a magnetically free system of a plurality of layers, wherein the magnetically free system has a magnetically free magnetization, wherein the magnetically free magnetization is variable in the presence of an external magnetic field, and wherein the magnetically free magnetization has a second magnetic orientation in a ground state. The magnetically free system has two ferromagnetic layers and an interlayer, wherein the interlayer is arranged between the two ferromagnetic layers and includes magnesium oxide. The layer stack furthermore includes a barrier layer, which is arranged between the reference layer and the magnetically free system and includes magnesium oxide.

公开(公告)号：US10854669B2

公开(公告)日：2020-12-01

申请号：US16909745

申请日：2020-06-23

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

公开(公告)号：US10712176B2

公开(公告)日：2020-07-14

申请号：US15652646

申请日：2017-07-18

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Klemens Pruegl

IPC: G01D5/16 ,  G01R33/09 ,  G01R33/02 ,  G01B7/30 ,  H04L12/877 ,  H04L12/911 ,  H04L12/927 ,  H04L12/863

Abstract: Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range of 360 degrees combine conventional, highly accurate AMR angle structures with structures in which an AMR layer is continuously magnetically biased by an exchange bias coupling effect. The equivalent bias field is lower than the external rotating magnetic field and is applied continuously to separate sensor structures. Thus, in contrast with conventional solutions, no temporary, auxiliary magnetic field need be generated, and embodiments are suitable for magnetic fields up to about 100 mT or more. Additional embodiments relate to combined TMR and AMR structures. In such embodiments, a TMR stack with a free layer functioning as an AMR structure is used. With a single such stack, contacted in different modes, a high-precision angle sensor with 360 degrees of uniqueness can be realized.