公开(公告)号：US12297102B2

公开(公告)日：2025-05-13

申请号：US18540253

申请日：2023-12-14

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geißler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/00

Abstract: In an embodiment, a method for forming a microfabricated structure includes depositing a first membrane on a substrate, depositing a first isolation layer on the first membrane, depositing a stator layer on the first isolation layer, forming a perforated stator from the stator layer, wherein the first isolation layer is disposed on a first surface of the perforated stator, depositing a second isolation layer on a second surface of the perforated stator and depositing a second membrane on the second isolation layer, including depositing a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first glass layer having a low etch rate, and a second glass layer having a high etch rate embedded in the first glass layer.

公开(公告)号：US11932533B2

公开(公告)日：2024-03-19

申请号：US17128638

申请日：2020-12-21

Applicant: Infineon Technologies AG

Inventor： Marc Fueldner ,  Andreas Wiesbauer ,  Athanasios Kollias

IPC: B81C1/00 ,  B81B7/02

CPC classification number: B81C1/0023 ,  B81B7/02 ,  B81C1/00158 ,  B81C1/00182 ,  B81C1/00293 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2207/012 ,  B81B2207/03 ,  B81C2201/0174 ,  B81C2203/0792

Abstract: A triple-membrane MEMS device includes a first membrane, a second membrane and a third membrane spaced apart from one another, wherein the second membrane is between the first membrane and the third membrane, a sealed low pressure chamber between the first membrane and the third membrane, a first stator and a second stator in the sealed low pressure chamber, and a signal processing circuit configured to read-out output signals of the triple-membrane MEMS device.

公开(公告)号：US11180361B2

公开(公告)日：2021-11-23

申请号：US16783587

申请日：2020-02-06

Applicant: Infineon Technologies AG

Inventor： Marc Fueldner ,  Arnaud Walther

IPC: H04R1/00 ,  B81B3/00 ,  H04R1/04 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00

Abstract: A MEMS device includes a first electrode structure and a second electrode structure forming a capacitive sensing arrangement. The MEMS device includes a plurality of anti-stiction bumps arranged between the first electrode structure and the second electrode structure at a corresponding plurality of locations. The plurality of locations being projected into a main surface of the second electrode structure is distributed so as to comprise a first distribution density in a first main surface region of the main surface and so as to comprise second, different distribution density in a second main surface region of the main surface, the second main surface region being delimited from the first main surface region.

公开(公告)号：US10981780B2

公开(公告)日：2021-04-20

申请号：US16543970

申请日：2019-08-19

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geissler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02 ,  H04R31/00 ,  H04R7/02 ,  H04R1/08 ,  H04R7/08

Abstract: A microfabricated structure includes a deflectable membrane, a first clamping layer on a first surface of the deflectable membrane, a second clamping layer on a second surface of the deflectable membrane, a first perforated backplate on the first clamping layer, and a second perforated backplate on the second clamping layer, wherein the first clamping layer comprises a first tapered edge portion having a negative slope between the first perforated backplate and the deflectable membrane.

公开(公告)号：US20210017016A1

公开(公告)日：2021-01-21

申请号：US16895366

申请日：2020-06-08

Applicant: Infineon Technologies AG

Inventor： Sebastian Anzinger ,  Christian Bretthauer ,  Marc Fueldner

IPC: B81B3/00 ,  B81C1/00 ,  H01L41/047 ,  H04R19/04

Abstract: A MEMS sound transducer element is operable in an audio and an ultrasonic range. The MEMS sound transducer element includes a first electrode structure, wherein a conductive material of the first electrode structure includes a plurality of electrically isolated electrode segments, and a second electrode structure spaced apart from the first electrode structure, wherein the first electrode structure and the second electrode structure are operable as an audio sound transducer. A first subset of the plurality of electrically isolated electrode segments of the first electrode structure is, in conjunction with the second electrode structure, operable as an ultrasonic or audio emitter, and a second subset of the plurality of the electrically isolated electrode segments of the first electrode structure is, in conjunction with the second electrode structure, operable as an ultrasonic or audio receiver.

公开(公告)号：US20200148531A1

公开(公告)日：2020-05-14

申请号：US16744857

申请日：2020-01-16

Applicant: Infineon Technologies AG

Inventor： Andreas Wiesbauer ,  Christian Mandl ,  Marc Fueldner ,  Shu-Ting Hsu

IPC: B81B7/00 ,  H04R1/40 ,  H04R19/04 ,  H04R31/00 ,  H04R19/00 ,  H04R3/00 ,  H04R1/04 ,  B81C1/00 ,  B81B3/00

Abstract: An embodiment as described herein includes a microelectromechanical system (MEMS) with a first MEMS transducer element, a second MEMS transducer element, and a semiconductor substrate. The first and second MEMS transducer elements are disposed at a top surface of the semiconductor substrate and the semiconductor substrate includes a shared cavity acoustically coupled to the first and second MEMS transducer elements.

公开(公告)号：US10589987B2

公开(公告)日：2020-03-17

申请号：US14073672

申请日：2013-11-06

Applicant: Infineon Technologies AG

Inventor： Andreas Wiesbauer ,  Christian Mandl ,  Marc Fueldner ,  Shu-Ting Hsu

IPC: B81B7/00 ,  H04R19/00 ,  H04R31/00 ,  H04R19/04 ,  H04R1/40 ,  B81B3/00 ,  B81C1/00 ,  H04R1/04 ,  H04R3/00

Abstract: An embodiment as described herein includes a microelectromechanical system (MEMS) with a first MEMS transducer element, a second MEMS transducer element, and a semiconductor substrate. The first and second MEMS transducer elements are disposed at a top surface of the semiconductor substrate and the semiconductor substrate includes a shared cavity acoustically coupled to the first and second MEMS transducer elements.

公开(公告)号：US10464807B2

公开(公告)日：2019-11-05

申请号：US15813990

申请日：2017-11-15

Applicant: Infineon Technologies AG

Inventor： Stefan Barzen ,  Wolfgang Friza ,  Marc Fueldner

IPC: B81B3/00 ,  H04R9/08 ,  H04R31/00 ,  B81C1/00 ,  H04R17/02 ,  H04R19/00

Abstract: A semiconductor device is proposed. The semiconductor device comprises a membrane structure having an opening. Furthermore, the semiconductor device comprises a first backplate structure, which is arranged on a first side of the membrane structure, and a second backplate structure, which is arranged on a second side of the membrane structure. The semiconductor device furthermore comprises a vertical connection structure, which connects the first backplate structure to the second backplate structure. In this case, the vertical connection structure extends through the opening.

公开(公告)号：US20190270639A1

公开(公告)日：2019-09-05

申请号：US16270219

申请日：2019-02-07

Applicant: Infineon Technologies AG

Inventor： Gunar Lorenz ,  Alfons Dehe ,  Marc Fueldner ,  Bernd Goller ,  Ulrich Krumbein ,  Andreas Wiesbauer

IPC: B81B7/00 ,  B81B7/02 ,  B81B3/00 ,  H04R19/04

Abstract: A MEMS sensor includes a housing with an interior volume, wherein the housing has an access port to the interior volume, a MEMS component in the housing, and a protection structure, which reduces an introduction of electromagnetic disturbance radiation with a wavelength in the range between 10 nm and 20 μm into the interior volume through the access port and reduces a propagation of the electromagnetic disturbance radiation in the interior volume.

公开(公告)号：US20190023562A1

公开(公告)日：2019-01-24

申请号：US16041083

申请日：2018-07-20

Applicant: Infineon Technologies AG

Inventor： Marc Fueldner ,  Stefan Barzen ,  Alfons Dehe ,  Gunar Lorenz

IPC: B81C1/00 ,  B81B3/00

Abstract: In accordance with one exemplary embodiment, a production method for a double-membrane MEMS component comprises the following steps: providing a layer arrangement on a carrier substrate, wherein the layer arrangement has a first and second membrane structure spaced apart from one another and a counterelectrode structure arranged therebetween, wherein a sacrificial material is arranged in an intermediate region between the counterelectrode structure and the first and second membrane structures respectively spaced apart therefrom, and wherein the first membrane structure has an opening structure to the intermediate region with the sacrificial material and partly removing the sacrificial material from the intermediate region in order to obtain a mechanical connection structure comprising the sacrificial material between the first and second membrane structures, which mechanical connection structure is mechanically coupled between the first and second membrane structures and is mechanically decoupled from the counterelectrode structure.