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    Fabrication of Schottky barrier MOSFETS
    31.
    发明授权
    Fabrication of Schottky barrier MOSFETS 失效
    肖特基势垒MOSFET的制造

    公开(公告)号：US4696093A

    公开(公告)日：1987-09-29

    申请号：US872147

    申请日：1986-06-09

    Applicant: James D. Welch

    Inventor： James D. Welch

    IPC: H01L21/336 ,  H01L29/06 ,  H01L29/78 ,  H01L21/441

    CPC classification number: H01L29/66643 ,  H01L29/0692 ,  H01L29/78

    Abstract: A method for fabricating MOSFET devices by a one mask, one etch process utilizing vacuum deposited chromium, silicon upon which is grown SiO.sub.2 and an anneal process. An optional optimizing ion implantation and activating anneal step is also disclosed, as are two, and three, mask and etch procedures.

    Abstract translation: 通过一个掩模制造MOSFET器件的方法，利用真空沉积铬的一个蚀刻工艺，生长SiO 2的硅和退火工艺。 还公开了可选的优化离子注入和激活退火步骤，以及两个和三个掩模和蚀刻步骤。

    Compact CMOS
    32.
    发明授权
    Compact CMOS 有权

    公开(公告)号：US12136661B2

    公开(公告)日：2024-11-05

    申请号：US17300746

    申请日：2021-10-18

    Applicant: James D. Welch

    Inventor： James D. Welch

    IPC: H01L29/66 ,  H01L21/8238 ,  H01L27/092

    Abstract: A Compact CMOS System having a non-split Channel Regions Controlling Gate, including a material which forms rectifying junctions with both N and P-type Field Induced Semiconductor, and at least two Channels electrically connected thereto and projecting substantially away therefrom adjacent and parallel to one another. There further being substantially non-rectifying junctions to the material which forms a rectifying junction with both N and P-type Field Induced Semiconductor, and to distal ends of the at least two Channels.

    Lamp
    35.
    外观设计
    Lamp 有权

    公开(公告)号：USD685934S1

    公开(公告)日：2013-07-09

    申请号：US29395687

    申请日：2012-03-14

    Applicant: James D. Welch

    Designer： James D. Welch

    Lamp
    36.
    外观设计
    Lamp 有权

    公开(公告)号：USD661003S1

    公开(公告)日：2012-05-29

    申请号：US29373043

    申请日：2011-02-23

    Applicant: James D. Welch

    Designer： James D. Welch

    Use of ellipsometry and surface plasmon resonance in monitoring thin film deposition or removal from a substrate surface
    39.
    发明授权
    Use of ellipsometry and surface plasmon resonance in monitoring thin film deposition or removal from a substrate surface 有权
    使用椭偏仪和表面等离子体共振来监测薄膜沉积或从基底表面去除

    公开(公告)号：US07283234B1

    公开(公告)日：2007-10-16

    申请号：US11014298

    申请日：2004-12-16

    Applicant: John A. Woollam ,  Blaine D. Johs ,  Thomas E. Tiwald ,  Martin M. Liphardt ,  James D. Welch

    Inventor： John A. Woollam ,  Blaine D. Johs ,  Thomas E. Tiwald ,  Martin M. Liphardt ,  James D. Welch

    IPC: G01J4/00

    CPC classification number: G01N21/553 ,  G01N21/211 ,  G01N2021/213

    Abstract: Improved methodology for monitoring deposition or removal of material to or from a process and/or wittness substrate which demonstrates a negative e1 at some wavelength. The method involves detection of changes in P-polarized electromagnetism ellipsometric DELTA at SPR Resonance Angle-of-Incidence (AOI) to monitor deposition of and/or removal of minute amounts of materials onto, or from, said process and/or witness substrate. The methodology can optionally monitor ellipsometric PSI, and involves simultaneously or sequentially applying non-P-polarized electromagnetism at the same angle of incidence, or electromagnetic radiation of any polarization at a different angle-of-incidence and wavelength to the process or wittness substrate and application of conventional ellipsometric analysis.

    Abstract translation: 改进的方法，用于监测沉积或去除过程和/或维持性底物的材料，其在一些波长处显示出负的e 1。 该方法涉及在SPR共振发光角（AOI）下检测P偏振电磁椭圆偏振ΔTA的变化，以监测微量材料沉积和/或去除所述工艺和/或可见底物上或从其上剥离。 该方法可以可选地监测椭偏测量的PSI，并且涉及以相同的入射角同时或顺序地施加非P偏振电磁体或将不同入射角和波长的任何偏振的电磁辐射施加到工艺或维护衬底，以及 常规椭圆分析的应用。

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