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公开(公告)号：US11763896B2
公开(公告)日：2023-09-19
申请号：US17951593
申请日：2022-09-23
Applicant: Micron Technology, Inc.
Inventor： Seungjune Jeon , Zhenming Zhou , Zhenlei Shen
CPC classification number: G11C16/34 , G06F9/30101 , G11C16/10 , G11C16/26 , G11C29/42
Abstract: A request to read data at the memory device is received. A first read operation is performed to read the data at the memory device using a first read threshold voltage. The data read at the memory device using the first read threshold voltage is determined to be associated with a first unsuccessful correction of an error. Responsive to determining that the data read at the memory device using the first read threshold voltage is associated with the first unsuccessful correction of the error, a second read threshold voltage is stored at a register to replace a preread threshold voltage previously stored at the register that is associated with the memory device. The first preread threshold voltage was previously used to perform a preread operation at the memory device. A second read operation to read the data at the memory device is performed using the second read threshold voltage.
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公开(公告)号：US11756597B2
公开(公告)日：2023-09-12
申请号：US17393112
申请日：2021-08-03
Applicant: Micron Technology, Inc.
Inventor： Mikai Chen , Zhenlei Shen , Murong Lang , Zhenming Zhou
IPC: G11C7/20 , G11C5/14 , G11C11/4096 , G11C7/10
CPC classification number: G11C7/20 , G11C5/148 , G11C7/1063 , G11C11/4096
Abstract: A system includes a memory device having memory cells and a processing device operatively coupled to the memory device. The processing device is to perform operations including: determining a length of time the memory device has been powered off; and in response to determining that the length of time satisfies a threshold value: for each of multiple groups of memory cells, asserting a corresponding flag; determining, based on the length of time, one or more adjusted demarcation voltages to be used in reading a state of the multiple groups of memory cells; and storing the one or more adjusted demarcation voltages for use in performing memory operations.
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公开(公告)号：US11720273B2
公开(公告)日：2023-08-08
申请号：US17323089
申请日：2021-05-18
Applicant: Micron Technology, Inc.
Inventor： Jian Huang , Zhenming Zhou , Zhenlei Shen
CPC classification number: G06F3/0644 , G06F3/0604 , G06F3/0688 , G06F11/076 , G06F11/0727
Abstract: Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, identifying, by the processing device, a plurality of partitions located on a die of the memory device. The operations performed by the processing device further include selecting, based on evaluating a predefined criterion reflecting a physical layout of the die of the memory device, a first partition and a second partition of the plurality of partitions. The operations performed by the processing device further include generating a codeword comprising first data residing on the first partition and second data residing on the second partition.
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公开(公告)号：US20230168812A1
公开(公告)日：2023-06-01
申请号：US18103133
申请日：2023-01-30
Applicant: Micron Technology, Inc.
Inventor： Zhenming Zhou , Seungjune Jeon , Zhenlei Shen
CPC classification number: G06F3/0616 , G06F3/0652 , G06F3/0659 , G06F3/0679 , G06F7/588 , G06F12/10 , G06F12/0246 , G06F2212/1036 , G06F2212/7211
Abstract: Systems and methods are disclosed including a processing device operatively coupled to memory device. The processing device performs operations comprising responsive to receiving a memory access command, determining a portion of the memory device that is referenced by a logical address specified by the memory access command; determining an endurance factor associated with the portion; and modifying, based on a value derived from the endurance factor, a media management metric associated with the portion of the memory device.
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公开(公告)号：US11626180B2
公开(公告)日：2023-04-11
申请号：US17317006
申请日：2021-05-11
Applicant: Micron Technology, Inc.
Inventor： Zhenming Zhou , Yang Lu , Jiangli Zhu , Tingjun Xie
Abstract: A system and method for measuring the degradation of one or more memory devices of a memory sub-system. An example system including a memory controller operatively coupled with a memory device and configured to perform operations comprising: testing different values for a setting of the memory device, wherein the setting of the memory device affects a duty cycle of a signal internal to the memory device; selecting an optimum value for the setting based on access errors during the testing, wherein the optimum value minimizes access errors; determining a degradation measurement for the memory device based on the optimum value; and providing a notification to a host system based on the degradation measurement.
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Patent Agency Ranking
公开(公告)号：US20230074538A1
公开(公告)日：2023-03-09
申请号：US17467826
申请日：2021-09-07
Applicant: Micron Technology, Inc.
Inventor： Zhenming Zhou , Tingjun Xie , Charles See Yeung Kwong
Abstract: Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, determining that a value of a write counter associated with the memory device satisfies a first threshold criterion. The operations performed by the processing device further include, responsive to determining that the value of the write counter satisfies the first threshold criterion, identifying a first memory unit and a second memory unit of the memory device, the second memory unit comprising one or more memory cells adjacent to one or more memory cells of the first memory unit. The operations performed by the processing device further include performing a read operation on the second memory unit to determine a set of failed bit count statistics corresponding to a plurality of codewords of the second memory unit. The operations performed by the processing device further include determining that the set of failed bit count statistics corresponding to the plurality of codewords of the second memory unit satisfies a second threshold criterion. The operations performed by the processing device further include, responsive to determining that the set of failed bit count statistics corresponding to the plurality of codewords of the second memory unit satisfies the second threshold criterion, performing a write scrub operation on the second memory unit.
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公开(公告)号：US11600315B2
公开(公告)日：2023-03-07
申请号：US17247801
申请日：2020-12-23
Applicant: Micron Technology, Inc.
Inventor： Zhenming Zhou , Tingjun Xie
IPC: G11C11/406 , G11C7/22 , G11C11/4074
Abstract: A method for performing a refresh operation based on system characteristics is provided. A The method includes determining that a current operation condition of a memory component is in a first state and detecting a change in the operation condition from the first state to a second state. The method further includes determining a range of the operation condition to which the second state belongs. The method further includes determining a refresh period associated with the range of the operation condition, the refresh period corresponding to a period of time between a first time when a write operation is performed on a segment of the memory component and a second time when a refresh operation is to be performed on the segment. The method further includes performing the refresh operation on the memory component according to the refresh period.
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公开(公告)号：US20230063498A1
公开(公告)日：2023-03-02
申请号：US17460112
申请日：2021-08-27
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Tingjun Xie , Seungjune Jeon , Zhenlei Shen , Zhenming Zhou
IPC: G06F3/06
Abstract: A plurality of memory device life metrics are determined, where one of the plurality of memory device life metrics comprises a read count metric that specifies a number of read operations performed on the memory device. A plurality of normalized metric values are calculated, where each of the normalized metric values is based on a ratio of a respective memory device life metric to a respective lifetime target value associated with the respective memory device life metric. A normalized metric value that satisfies a selection criterion is identified from the plurality of normalized metric values. The identified normalized metric value corresponds to an amount of used device life of the memory device. An amount of remaining device life of the memory device is determined based on the identified normalized metric value. An indication of the amount of remaining device life is provided to a host system.
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39.发明申请公开(公告)号：US20230062213A1
公开(公告)日：2023-03-02
申请号：US17961193
申请日：2022-10-06
Applicant: Micron Technology, Inc.
Inventor： Tingjun Xie , Murong Lang , Zhenming Zhou
IPC: G11C29/10
Abstract: A system and method for optimizing seasoning trim values based on form factors in memory sub-system manufacturing. An example method includes selecting a baseline set of trim values based on a set of memory sub-system form factors; generating a first modified set of trim values for seasoning operations by modifying a first trim value of the baseline trim values; causing each memory sub-system of a plurality of memory sub-systems to perform seasoning operations using the first modified set of trim values; responsive to determining that a memory sub-system of the plurality of memory sub-system failed to satisfy a predetermined criterion, determining whether the memory sub-system is extrinsically defective; responsive to determining that the memory sub-system is extrinsically defective, removing the extrinsically defective memory sub-system from the set of memory sub-systems; and generating a second modified set of trim values for seasoning operations.
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公开(公告)号：US11500588B2
公开(公告)日：2022-11-15
申请号：US17147126
申请日：2021-01-12
Applicant: Micron Technology, Inc.
Inventor： Murong Lang , Zhenming Zhou
Abstract: A data structure is stored that includes a slope value corresponding to each die temperature of a set of die temperatures, where the slope value represents a change of a read voltage level as a function of a delay time of a memory sub-system. Using the data structure, a stored slope value corresponding to a measured die temperature is identified. An adjusted read voltage level is determined based at least in part on the stored slope value. The read command is executed using the adjusted read voltage level.
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