Abstract:
A method for mirror-coating lateral surfaces of optical components, a mirror-coated optical component and an optoelectronic semiconductor body mountable on surface are disclosed. In an embodiment, an optoelectronic semiconductor body includes a semiconductor chip having a radiation side and a contact side different from the radiation side, wherein contact elements for electrically contacting the semiconductor body are attached to the contact side, and wherein the contact elements are freely accessible. The body further includes a metal mirror layer disposed on the semiconductor chip, wherein the metal mirror layer has a reflectivity of at least 80% to radiation emitted by the semiconductor chip during operation, wherein the mirror layer is a continuous and contiguous mirror layer, which covers all sides of the semiconductor chip that are not the contact side and the radiation side by at least 95%, and wherein the mirror layer is arranged at the semiconductor chip in a form-fit manner.
Abstract:
An optoelectronic module (202, 204, 206, 208, 210, 212, 214, 216, 218, 220, 222, 224, 226, 228, 230, 232, 234) comprises a carrier (102), at which and/or in which are arranged at least two semiconductor chips (104, 104a1, 104a2, 104b; 106, 106a1, 106a2, 106b, 106c) for emitting electromagnetic radiation (108a, 108b). An emission unit (110) for emitting electromagnetic radiation (109) from the optoelectronic module (202, 204, 206, 208, 210, 212, 214, 216, 218, 220, 222, 224, 226, 228, 230, 232, 234) is arranged on or in the carrier (102). At least one of the semiconductor chips (106, 106a1, 106a2, 106b, 106c) is spaced apart from the emission unit (110). A waveguide (112) guides the electromagnetic radiation (108a) of the at least one spaced-apart semiconductor chip (106, 106a1, 106a2, 106b, 106c) to the emission unit (110). The emission unit (110) has a coupling-out structure (114, 114a, 114b, 114c) for coupling out the electromagnetic radiation (108a) from the waveguide (112).
Abstract:
An optoelectronic device and a method for producing an optoelectronic device are disclosed. An embodiment of an optoelectronic device includes a carrier, an electrically conductive layer arranged on the carrier, at least one semiconductor chip comprising an active layer for generating electromagnetic radiation, wherein the semiconductor chip is electrically conductively and mechanically connected with the carrier via the electrically conductive layer. The device further comprises a holder, wherein a surface of the carrier remote from the semiconductor chip is arranged on the holder, wherein the carrier is mechanically connected with the holder by at least one fastening element and is fastened to the holder, wherein the fastening element passes completely through the carrier, and wherein the semiconductor chip is electrically conductively connected to the holder by the fastening element.
Abstract:
An optoelectronic component includes an electrically insulating connection carrier constructed in a multipartite fashion. The connection carrier has at least one ceramic layer and a silicon layer. The silicon layer has an electrically conductive layer on the top side of the silicon layer facing away from the ceramic layer. A light-emitting diode is electrically conductively and mechanically connected to the connection carrier via the electrically conductive layer. A method for producing an optoelectronic component is furthermore specified.
Abstract:
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μ.
Abstract:
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
Abstract:
An arrangement having a plurality of lighting modules and a method for producing an arrangement having a plurality of lighting modules are disclosed. In an embodiment an arrangement includes a plurality of lighting modules held by a carrier, each lighting module having a plurality of optoelectronic components arranged in a first number of rows and a second number of columns, wherein the lighting modules include a respective first number of first electrodes and a respective second number of second electrodes, wherein the optoelectronic components of a respective row of the rows are electrically connected to one of the first electrodes of the respective lighting module, wherein the optoelectronic components of a respective column of the columns are electrically connected to one of the second electrodes of the respective lighting module, and wherein the carrier includes one third electrode per row and one fourth electrode per column, the electrodes being electrically contactable in each case from outside the carrier.
Abstract:
A method for manufacturing a plurality of surface mounted optoelectronic devices and a surface mounted optoelectronic device are disclosed. In an embodiment, a surface mounted optoelectronic device includes a transparent base body having a mounting rear side, a radiation exit side opposite the mounting rear side, and mounting side surfaces which are each disposed transversely to the radiation exit side, a semiconductor layer sequence disposed laterally to at least one mounting side surface and a terminal contact extending from the at least one mounting side surface to the mounting rear side, wherein the semiconductor layer sequence includes an active region configured to emit radiation so that the radiation decouples from the surface mounted optoelectronic device via the radiation exit side of the base body.
Abstract:
An optoelectronic component includes a light emitting semiconductor chip, including an emission side and comprising an underside, wherein the optoelectronic component is configured to emit light via the emission side, the optoelectronic component including an insulating layer, the light emitting semiconductor chip is embedded into the insulating layer, the light emitting semiconductor chip including two electrical contact locations, the contact locations face away from the emission side, a first and a second electrically conductive contact layer are provided, respectively, an electrically conductive contact layer electrically conductively connects to a contact location of the semiconductor chip, the electrically conductive contact layers are arranged in the insulating layer, the first electrically conductive contact layer adjoins a first side face of the optoelectronic component, and the second electrically conductive contact layer adjoins a second side face of the optoelectronic component.
Abstract:
A semiconductor component includes first and second connection contacts provided to electrically contact a semiconductor body, a carrier on which a semiconductor chip is arranged, the carrier including a base body including a chip mounting surface and a connection surface opposite the chip mounting surface and at least one side surface, that connects the chip mounting surface to the connection surface, a first electrically conductive contact layer electrically conductively connected to the first connection contact, and a second electrically conductive contact layer electrically conductively connected to the second connection contact, wherein the first and the second contact layer are applied to the base body and each include a first partial region arranged on the chip mounting surface, a second partial region arranged on a side surface and a third partial region arranged on the connection surface, and wherein the base body contains a radiation-transmissive base material.