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    Optoelectronic component, semiconductor structure and method
    1.
    发明授权
    Optoelectronic component, semiconductor structure and method 有权

    公开(公告)号：US12294039B2

    公开(公告)日：2025-05-06

    申请号：US17753957

    申请日：2020-03-26

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Andreas Biebersdorf ,  Stefan Illek ,  Felix Feix ,  Christoph Klemp ,  Ines Pietzonka ,  Petrus Sundgren ,  Christian Berger ,  Ana Kanevce

    IPC: H01L33/06 ,  H01L33/00 ,  H01L33/30

    Abstract: A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

    Method of removing a growth substrate from a layer sequence
    8.
    发明授权
    Method of removing a growth substrate from a layer sequence 有权

    公开(公告)号：US10147647B2

    公开(公告)日：2018-12-04

    申请号：US15558743

    申请日：2016-03-14

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Christoph Klemp ,  Marco Englhard

    IPC: H01L21/78 ,  H01L21/306 ,  H01L21/67 ,  H01L21/683 ,  H01L31/18 ,  H01L33/00

    Abstract: A method of detaching a growth substrate from a layer sequence includes introducing at least one wafer composite into an etching bath containing an etching solution such that the etching solution is located at least in regions within separating trenches, repeatedly varying a pressure of a base pressure prevailing in the etching bath with at least one pressure variation device, and detaching the growth substrate, wherein at least one of 1-3 is satisfied: 1) a buffer chamber attached to the etching bath and connected thereto is provided and the volume variation is effected by a movement of a piston or hydraulic plunger introduced into the buffer chamber, 2) the volume variation is at least partly effected with a compressor attached to the etching bath, and 3) the pressure variation is at least partly effected by at least one of removal of a gas and a liquid from the etching bath or by addition of at least one of the gas and the liquid thereto.

    Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
    9.
    发明授权
    Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip 有权
    光电半导体芯片及其制造方法

    公开(公告)号：US09172014B2

    公开(公告)日：2015-10-27

    申请号：US14352724

    申请日：2012-10-11

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Martin R. Behringer ,  Markus Bröll ,  Christoph Klemp

    IPC: H01L33/58 ,  H01L31/14 ,  H01L29/06 ,  H01L33/22

    CPC classification number: H01L33/58 ,  H01L33/22

    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates an electromagnetic radiation and a light exit side, and a light coupling-out layer applied to the light exit side, wherein the light coupling-out layer includes of radiation-inactive nanocrystals composed of a material transmissive to the radiation generated, and a refractive index of the radiation-transmissive material for the radiation is at least 1.9.

    Abstract translation: 光电子半导体芯片包括具有生成电磁辐射和光出射侧的有源层的半导体层序列和施加到光出射侧的光耦合层，其中光耦合层包括辐射非活性的 由对所产生的辐射透射的材料构成的纳米晶体和用于辐射的辐射透射材料的折射率至少为1.9。

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