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    Optimizing the thermal budget during a pulsed heating process
    34.
    发明授权
    Optimizing the thermal budget during a pulsed heating process 有权
    在脉冲加热过程中优化热预算

    公开(公告)号：US07745762B2

    公开(公告)日：2010-06-29

    申请号：US11443464

    申请日：2006-05-30

    Applicant: Paul Janis Timans

    Inventor： Paul Janis Timans

    IPC: F27B5/14 ,  C23C16/00

    CPC classification number: H01L21/67115 ,  F27B5/04 ,  F27B17/0025 ,  H01L21/67109

    Abstract: An approach for optimizing the thermal budget during a pulsed heating process is disclosed. A heat sink or thermal transfer plate is configured and positioned near an object, such as a semiconductor wafer, undergoing thermal treatment. The heat sink is configured to enhance the thermal transfer rate from the object so that the object is rapidly brought down from the peak temperature after an energy pulse. High thermally-conductive material may be positioned between the plate and the object. The plate may include protrusions, ribs, holes, recesses, and other discontinuities to enhance heat transfer and avoid physical damage to the object during the thermal cycle. Additionally, the optical properties of the plate may be selected to allow for temperature measurements via energy measurements from the plate, or to provide for a different thermal response to the energy pulse. The plate may also allow for pre-heating or active cooling of the wafer.

    Abstract translation: 公开了一种在脉冲加热过程中优化热预算的方法。 散热器或热转印板被配置和定位在经受热处理的诸如半导体晶片的物体附近。 散热器被配置为增强从物体的热传递速率，使得物体在能量脉冲之后迅速从峰值温度降低。 高导热材料可以位于板和物体之间。 板可以包括突起，肋，孔，凹槽和其它不连续性，以增强热传递并且避免在热循环期间对物体的物理损伤。 此外，可以选择板的光学性质以允许通过来自板的能量测量进行温度测量，或者为能量脉冲提供不同的热响应。 该板还可以允许对晶片进行预热或主动冷却。

    Methods for Determining Wafer Temperature
    35.
    发明申请
    Methods for Determining Wafer Temperature 有权
    确定晶圆温度的方法

    公开(公告)号：US20090245320A1

    公开(公告)日：2009-10-01

    申请号：US12480400

    申请日：2009-06-08

    Applicant: Paul Janis Timans

    Inventor： Paul Janis Timans

    IPC: G01K15/00 ,  G01K11/00

    CPC classification number: G01K15/00 ,  G01J5/0007 ,  G01J5/0806 ,  G01J5/0831 ,  G01J5/0846 ,  G01K11/125

    Abstract: Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.

    Abstract translation: 用于晶片温度测量和温度测量装置的校准的方法和装置可以基于确定半导体晶片中的层的吸收。 可以通过将光引向晶片并且从入射光入射的表面下方测量从晶片反射的光来确定吸收。 校准晶片和测量系统可以被布置和配置，以便测量以预定角度反射到晶片表面的光并且其它光不是。 测量也可以基于评估晶片中或晶片上的图案的图像中的对比度。 其他测量可以利用基于反射或透射光的温度确定旁边的晶片内的光程长度的确定。

    Apparatus and method for reducing stray light in substrate processing chambers
    36.
    发明授权
    Apparatus and method for reducing stray light in substrate processing chambers 有权
    用于减少衬底处理室中杂散光的装置和方法

    公开(公告)号：US07358462B2

    公开(公告)日：2008-04-15

    申请号：US11496901

    申请日：2006-08-01

    Applicant: Paul Janis Timans

    Inventor： Paul Janis Timans

    IPC: F27B5/14 ,  C03C3/15

    CPC classification number: H01L21/67248 ,  F27B5/04 ,  F27B17/0025 ,  H01L21/67115

    Abstract: A method and apparatus for heating semiconductor wafers in thermal processing chambers is disclosed. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.

    Abstract translation: 公开了一种在热处理室中加热半导体晶片的方法和装置。 该装置包括非接触式温度测量系统，其利用诸如高温计的辐射传感装置来确定处理期间晶片的温度。 辐射感测装置通过监测晶片在特定波长处发射的辐射量来确定晶片的温度。 根据本发明，在用于过滤由用于在辐射感测装置工作的波长处加热晶片的灯发出的光的装置中包括光谱滤波器。 光谱滤光器包括诸如稀土元素的光吸收剂，稀土元素的氧化物，光吸收染料，金属或半导体材料。

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