公开(公告)号：US20170016116A1

公开(公告)日：2017-01-19

申请号：US15202869

申请日：2016-07-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Takashi MATSUMOTO ,  Ryota IFUKU

IPC: C23C16/455 ,  C01B31/04

CPC classification number: C01B32/186 ,  C23C14/025 ,  C23C14/0605 ,  C23C14/568 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/54

Abstract: There is provided a graphene production method including: forming a catalyst metal film on a surface of a substrate; heating the catalyst metal film; and cooling the heated catalyst metal film, wherein the forming a catalyst metal film includes introducing carbons into the catalyst metal film.

Abstract translation: 提供了一种石墨烯制造方法，包括：在基板的表面上形成催化剂金属膜; 加热催化剂金属膜; 并冷却加热的催化剂金属膜，其中形成催化剂金属膜包括将碳引入催化剂金属膜中。

公开(公告)号：US20160075560A1

公开(公告)日：2016-03-17

申请号：US14947659

申请日：2015-11-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito KAGAYA ,  Takashi MATSUMOTO ,  Daisuke NISHIDE

IPC: C01B31/04 ,  C23C16/26 ,  C23C16/50

CPC classification number: C01B32/186 ,  C01B2204/32 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574

Abstract: A graphene producing method which is capable of increasing a size of each domain of graphene. A plasma CVD film formation device that activates a catalyst metal layer formed on a wafer; modifies the same into an activated catalyst metal layer; decomposes a C2H4 gas as a low reactivity carbon-containing gas by plasma in a space that opposes the wafer; and decomposes a C2H2 gas as a high reactivity carbon-containing gas by heat in the space.

Abstract translation: 能够增加石墨烯每个畴的尺寸的石墨烯制造方法。 一种激活形成在晶片上的催化剂金属层的等离子体CVD膜形成装置; 将其改变为活化的催化剂金属层; 在与晶片相对的空间中通过等离子体分解C2H4气体作为低反应性含碳气体; 并通过空间中的热量将C2H2气体分解为高反应性含碳气体。

公开(公告)号：US20230080956A1

公开(公告)日：2023-03-16

申请号：US17931930

申请日：2022-09-14

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Ryota IFUKU ,  Hiroki YAMADA ,  Haruhiko FURUYA

IPC: H01L21/3205 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677

Abstract: A substrate processing method includes: a carry-in step of carrying a substrate having a silicon-containing film on a surface of the substrate into a processing container; a first step of forming an adsorption layer by supplying an oxygen-containing gas into the processing container and causing the oxygen-containing gas to be adsorbed on a surface of the silicon-containing film; a second step of forming a silicon oxide layer by supplying an argon-containing gas into the processing container and causing the adsorption layer and the surface of the silicon-containing film to react with each other with plasma of the argon-containing gas; and a third step of forming a graphene film on the silicon oxide layer by supplying a carbon-containing gas into the processing container with plasma of the carbon-containing gas.

公开(公告)号：US20210164103A1

公开(公告)日：2021-06-03

申请号：US17106521

申请日：2020-11-30

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO ,  Masahito SUGIURA ,  Makoto WADA

IPC: C23C16/511 ,  H01L21/02 ,  H01J37/32 ,  C23C16/26 ,  C23C16/44

Abstract: There is provided a film forming method of forming a carbon-containing film by a microwave plasma from a microwave source, the film forming method including: a dummy step of performing a dummy process by generating plasma of a first carbon-containing gas within a processing container; a placement step of placing a substrate on a stage within the processing container; and a film forming step of forming the carbon-containing film on the substrate using plasma of a second carbon-containing gas.

公开(公告)号：US20210047186A1

公开(公告)日：2021-02-18

申请号：US17041649

申请日：2019-03-01

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO

IPC: C01B32/186 ,  H01M4/62 ,  H05H1/46

Abstract: A method of forming a graphene structure includes providing a substrate to be processed and forming a graphene structure on a surface of the substrate to be processed through a plasma CVD using plasma of a processing gas including a carbon-containing gas and an oxidizing gas in a state in which the surface of the substrate to be processed does not have a catalytic function.

公开(公告)号：US20190085457A1

公开(公告)日：2019-03-21

申请号：US16131458

申请日：2018-09-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO

IPC: C23C16/511 ,  H01L21/02 ,  H01J37/32 ,  C23C16/26 ,  C23C16/52

Abstract: A graphene structure forming method for forming a graphene structure is provided. The method comprises preparing a target substrate, and forming the graphene structure on a surface of the target substrate by remote microwave plasma CVD using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function.

公开(公告)号：US20180226261A1

公开(公告)日：2018-08-09

申请号：US15888468

申请日：2018-02-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO

IPC: H01L21/3065 ,  H01L29/16 ,  H01L21/30 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/3222 ,  H01J37/32724 ,  H01J2237/3345 ,  H01L21/3003 ,  H01L21/67069 ,  H01L29/1606

Abstract: A method for anisotropically etching graphene includes generating hydrogen plasma by microwave plasma, and anisotropically etching graphene by the generated hydrogen plasma.

公开(公告)号：US20170029942A1

公开(公告)日：2017-02-02

申请号：US15294971

申请日：2016-10-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi MATSUMOTO

IPC: C23C16/02 ,  C23C16/511 ,  C01B31/04 ,  B01J37/02 ,  B01J23/755 ,  B01J35/02 ,  B01J37/34 ,  C23C16/26 ,  B01J23/75

CPC classification number: C23C16/02 ,  B01J23/40 ,  B01J23/42 ,  B01J23/44 ,  B01J23/462 ,  B01J23/70 ,  B01J23/72 ,  B01J23/75 ,  B01J23/755 ,  B01J35/002 ,  B01J35/02 ,  B01J37/0244 ,  B01J37/349 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C23C16/26 ,  C23C16/511 ,  Y10S977/734 ,  Y10S977/843

Abstract: A pretreatment method is performed before a graphene grows by performing a CVD method on a catalyst metal layer formed on a workpiece. The method includes a plasma treatment process in which the catalyst metal layer is activated by applying plasma of a treatment gas including a reducing gas and a nitrogen-containing gas on the catalyst metal layer.

Abstract translation: 在通过在形成在工件上的催化剂金属层上进行CVD法在石墨烯生长之前进行预处理方法。 该方法包括等离子体处理工艺，其中通过在催化剂金属层上施加包括还原气体和含氮气体的处理气体的等离子体来激活催化剂金属层。

公开(公告)号：US20160042958A1

公开(公告)日：2016-02-11

申请号：US14819038

申请日：2015-08-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Takashi MATSUMOTO ,  Munehito KAGAYA ,  Ryota IFUKU

IPC: H01L21/285 ,  C23C16/52 ,  H01L21/67 ,  C23C16/18 ,  C23C16/26 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/26 ,  C01B31/0453 ,  C01B32/186 ,  C23C16/0218 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/45523 ,  C23C16/46 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/67103 ,  H01L21/68742 ,  H01L21/76864 ,  H01L21/76876 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.

Abstract translation: 形成石墨烯基膜的方法包括：通过使用氢气和氨气的有机金属化合物的化学气相沉积（CVD）在基板上形成作为石墨烯的基膜的金属膜; 将基板加热至除去形成的金属膜中的杂质作为气体的温度; 并将基板加热到金属膜中生长金属晶粒的温度，其中将基板加热到基板的温度达到在金属膜中生长金属晶粒的温度高于 在将衬底加热时的衬底的温度作为气体除去形成的金属膜中包含的杂质的温度。

公开(公告)号：US20150259801A1

公开(公告)日：2015-09-17

申请号：US14724913

申请日：2015-05-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi MATSUMOTO ,  Masahito SUGIURA ,  Kenjiro KOIZUMI ,  Yusaku KASHIWAGI

IPC: C23C16/503 ,  C23C16/26 ,  C23C16/44 ,  C23C16/511 ,  C23C16/458 ,  C23C16/455

CPC classification number: C23C16/503 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C23C16/26 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/511 ,  H01L21/28556 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.

Abstract translation: 形成碳纳米管的方法包括制备具有其上形成有一个或多个开口的表面的目标物体，每个开口在其底部具有催化剂金属层; 在催化剂金属层上进行氧等离子体处理; 以及通过对经受氧等离子体处理的金属催化剂层进行氢等离子体处理来激活催化剂金属层的表面。 该方法还包括通过在处理室中提供具有在目标物体上方的多个通孔的电极部件，然后在活化的催化剂金属层上通过等离子体CVD将碳纳米管生长在活性催化剂金属层上，从而在目标物体的开口中填充碳纳米管 在电极构件上方产生的等离子体中的活性物质通过通孔朝向目标物体扩散，同时向电极构件施加DC电压。