公开(公告)号：US20170016116A1

公开(公告)日：2017-01-19

申请号：US15202869

申请日：2016-07-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Takashi MATSUMOTO ,  Ryota IFUKU

IPC: C23C16/455 ,  C01B31/04

CPC classification number: C01B32/186 ,  C23C14/025 ,  C23C14/0605 ,  C23C14/568 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/54

Abstract: There is provided a graphene production method including: forming a catalyst metal film on a surface of a substrate; heating the catalyst metal film; and cooling the heated catalyst metal film, wherein the forming a catalyst metal film includes introducing carbons into the catalyst metal film.

Abstract translation: 提供了一种石墨烯制造方法，包括：在基板的表面上形成催化剂金属膜; 加热催化剂金属膜; 并冷却加热的催化剂金属膜，其中形成催化剂金属膜包括将碳引入催化剂金属膜中。

公开(公告)号：US20240254626A1

公开(公告)日：2024-08-01

申请号：US18564641

申请日：2022-05-17

Applicant: Tokyo Electron Limited

Inventor： Hiroki YAMADA ,  Ryota IFUKU ,  Takashi MATSUMOTO ,  Nobutake KABUKI

IPC: C23C16/455 ,  C23C16/26 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45538 ,  C23C16/26 ,  C23C16/45534 ,  C23C16/45544 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32201 ,  H01J2237/332

Abstract: A film forming method of forming a graphene film includes a loading process of loading a substrate into a processing container, a first process of forming the graphene film on the substrate using plasma of a first processing gas that includes a carbon-containing gas, and a second process of forming a doped graphene film on at least one of the substrate and the graphene film using plasma of a second processing gas that includes a dopant gas.

公开(公告)号：US20230257871A1

公开(公告)日：2023-08-17

申请号：US18002312

申请日：2021-06-11

Applicant: Tokyo Electron Limited

Inventor： Takashi MATSUMOTO ,  Ryota IFUKU

IPC: C23C16/26 ,  C01B32/186 ,  C23C16/511

CPC classification number: C23C16/26 ,  C01B32/186 ,  C23C16/511

Abstract: A film forming method includes a first step of supplying a first aromatic hydrocarbon gas having a first functional group to a substrate provided with an underlayer film, and a second step of activating the first aromatic hydrocarbon gas adsorbed on a surface of the underlayer film by plasma of a first reaction gas that contains at least a rare gas.

公开(公告)号：US20230102051A1

公开(公告)日：2023-03-30

申请号：US17935594

申请日：2022-09-27

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Makoto WADA ,  Nobutake KABUKI ,  Takashi MATSUMOTO ,  Hiroshi TERADA ,  Genji NAKAMURA

IPC: C23C16/26 ,  C23C16/02 ,  C23C16/44 ,  C23C16/513

Abstract: A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.

公开(公告)号：US20220185673A1

公开(公告)日：2022-06-16

申请号：US17593470

申请日：2020-03-05

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO ,  Akira FUJIO ,  Shin KONO

IPC: C01B32/186 ,  G01N21/21 ,  G01N21/88 ,  G01J4/04

Abstract: A method for detecting abnormal growth of graphene includes: measuring, through spectroscopic ellipsometry, a reflection spectrum of a measurement object having a graphene film formed through CVD on a substrate; creating a film structure model, calculating polarization parameters, and matching calculated values of the polarization parameters to measured values through fitting; and detecting abnormal growth of the graphene based on a value of goodness of fit obtained when fitting the polarization parameters.

公开(公告)号：US20200303251A1

公开(公告)日：2020-09-24

申请号：US16822210

申请日：2020-03-18

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Masahito SUGIURA ,  Ryota IFUKU

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: There is provided a semiconductor device including a first conductive layer formed on a substrate; a second conductive layer serving as a wiring layer and a barrier layer provided between the first conductive layer and the second conductive layer, wherein the barrier layer is made of a graphene film, and the second conductive layer includes a metal silicide compound, the metal silicide compound being provided so as to be in contact with the graphene film constituting the barrier layer.

公开(公告)号：US20180090446A1

公开(公告)日：2018-03-29

申请号：US15714951

申请日：2017-09-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroaki KAWASAKI ,  Takashi MATSUMOTO ,  Hiroyuki NAGAI ,  Ryota IFUKU

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L21/321

Abstract: There is provided a method for manufacturing Ni wiring. The method includes forming an Ni film on a surface of a substrate having a recess formed thereon by CVD or ALD by using an Ni compound as a film forming material and NH3gas and H2 gas as reduction gases to partially fill the recess. The method further includes annealing the substrate to make the Ni film on the surface of the substrate and on a side surface of the recess reflow into the recess.

公开(公告)号：US20250129474A1

公开(公告)日：2025-04-24

申请号：US18999454

申请日：2024-12-23

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Masataka TOIYA ,  Eiki KAMATA ,  Hiroki YAMADA ,  Takashi MATSUMOTO

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02

Abstract: A method of processing a substrate includes placing the substrate on a stage in a process container, supplying a plasma generating gas into the process container to generate plasma of first power at a first pressure, controlling an inside of the process container to a second pressure lower than the first pressure, and supplying a carbon-containing gas into the process container to form a graphene film on the substrate.

公开(公告)号：US20230420294A1

公开(公告)日：2023-12-28

申请号：US18252408

申请日：2021-11-02

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Nobutake KABUKI ,  Ryota IFUKU ,  Takashi MATSUMOTO

IPC: H01L21/768 ,  H01L21/02 ,  H01J37/32 ,  C23C16/458 ,  C23C16/02 ,  C23C16/26 ,  C23C16/50 ,  C01B32/186

CPC classification number: H01L21/7685 ,  H01L21/02068 ,  H01J37/32715 ,  C23C16/4583 ,  C23C16/02 ,  C23C16/26 ,  C23C16/50 ,  C01B32/186 ,  H01J2237/20235 ,  H01J2237/334

Abstract: A substrate processing method of processing a substrate having a base film includes a loading process of loading the substrate into a processing container, a first process of performing a first plasma process in a state where the loaded substrate is held at a first position by raising substrate support pins of a stage arranged in the processing container, and a second process of performing a second plasma process while holding the substrate at a second position by lowering the substrate support pins.

公开(公告)号：US20230042099A1

公开(公告)日：2023-02-09

申请号：US17757906

申请日：2020-11-26

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Nobutake KABUKI ,  Ryota IFUKU ,  Masahito SUGIURA ,  Hirokazu UEDA

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/768 ,  H01L21/285 ,  C23C16/26 ,  C23C16/511 ,  C01B32/186

Abstract: A film forming method of forming a carbon film includes: cleaning an interior of a processing container by using oxygen-containing plasma in a state in which no substrate is present inside the processing container; subsequently, extracting and removing oxygen inside the processing container by using plasma in the state in which no substrate is present inside the processing container; and subsequently, loading a substrate into the processing container and forming the carbon film on the substrate through plasma CVD using a processing gas including a carbon-containing gas, wherein the cleaning, the extracting and removing the oxygen, and the forming the carbon film are repeatedly performed.