公开(公告)号：US10777389B2

公开(公告)日：2020-09-15

申请号：US15456894

申请日：2017-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda

IPC: H01J37/32

Abstract: There is provided a plasma processing apparatus including a microwave output part configured to generate microwaves and to distribute and output the microwaves to a plurality of paths, a microwave transmission part configured to transmit the microwaves outputted from the microwave output part into a process container via a plurality of transmission paths, and a control part configured to control the microwaves. The control part is configured to control the microwaves such that the phases of microwaves become different from each other when the microwaves transmitted via the transmission paths are introduced from a microwave transmitting plate for common use into the process container.

公开(公告)号：US10727030B2

公开(公告)日：2020-07-28

申请号：US15165388

申请日：2016-05-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Tomohito Komatsu

IPC: H01J37/32

Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, includes: a microwave output part; a microwave transmission part configured to transmit microwave outputted from the microwave output part; and a microwave radiation member configured to radiate the microwave into the chamber, wherein the microwave transmission part includes a microwave introduction mechanism configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes: a metal main body; a dielectric slow-wave member installed in a portion of the main body; a plurality of slots configured to radiate the microwave introduced through the dielectric slow-wave member therethrough; and a dielectric microwave transmission member installed in a portion facing the chamber in the main body to cover a region where the slots are formed; and a plurality of dielectric layers installed to be separated from each other.

公开(公告)号：US10443130B2

公开(公告)日：2019-10-15

申请号：US14968346

申请日：2015-12-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda

IPC: C23C16/511 ,  C23C16/455 ,  C23C16/517 ,  H01J37/22 ,  H01J37/32

Abstract: There is provided a plasma processing apparatus which includes a plasma generating antenna equipped with a shower plate and configured to supply a first gas and a second gas into a processing vessel. The apparatus includes a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes a plurality of first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. Each of the first gas supply holes is disposed inward of the outer surface of the drooping member. Each of the second gas supply holes is disposed outward of the outer surface of the drooping member. An orifice portion is formed in the through-hole.

公开(公告)号：US10211032B2

公开(公告)日：2019-02-19

申请号：US14566117

申请日：2014-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomohito Komatsu ,  Taro Ikeda ,  Yutaka Fujino

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

Abstract: A microwave plasma source radiating a microwave in a chamber of a plasma processing apparatus to generate surface wave plasma includes a microwave output unit configured to generate and output a microwave, a microwave supply unit configured to transmit the microwave output from the microwave output unit, and a microwave radiation member configured as a ceiling wall of the chamber and configured to radiate the microwave supplied from the microwave supply unit into the chamber. The microwave supply unit includes microwave introduction mechanisms provided along a circumferential direction, thereby introducing the microwave to the microwave radiation member. The microwave radiation member includes slot antennas having slots through which the microwave is radiated and a microwave transmission member. The slots are provided to form a circular shape as a whole. The microwave transmission member provided to form a circular ring shape.

公开(公告)号：US09204500B2

公开(公告)日：2015-12-01

申请号：US13727000

申请日：2012-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Shigeru Kasai ,  Jun Yamashita ,  Masakazu Ban

IPC: H05B6/64 ,  H05B6/72 ,  H05B6/74 ,  H05B6/80 ,  H05B6/70

CPC classification number: H05B6/6402 ,  H05B6/6426 ,  H05B6/70 ,  H05B6/707 ,  H05B6/72 ,  H05B6/806

Abstract: In the microwave heating apparatus, four microwave introduction ports are arranged at positions spaced apart from each other at an angle of about 90° in a ceiling portion of a processing chamber in such a way that the long sides and the short sides thereof are in parallel to inner surfaces of four sidewalls. The microwave introduction port are disposed in such a way that each of the microwave introduction ports are not overlapped with another microwave introduction port whose long sides are in parallel to the long sides of the corresponding microwave introduction port when the corresponding microwave introduction port is moved in translation in a direction perpendicular to the long sides thereof.

Abstract translation: 在微波加热装置中，四个微波导入口被配置在处理室的顶部以大约90°的角度彼此间隔开的位置，使得其长边和短边平行 到四个侧壁的内表面。 微波引入端口以这样的方式设置，即当相应的微波引入端口移动时，每个微波引入端口不与其长边与相应的微波导入口的长边平行的另一个微波导入口重叠 在垂直于其长边的方向上平移。

公开(公告)号：US20150090708A1

公开(公告)日：2015-04-02

申请号：US14381235

申请日：2013-02-05

Applicant: Tokyo Electron Limited

Inventor： Sumi Tanaka ,  Taro Ikeda ,  Yoshiro Kabe ,  Kouji Shimomura ,  Seokhyoung Hong ,  Jun Yamashita ,  Masakazu Ban ,  Taichi Monden ,  Masayoshi Maenishi ,  Ryoji Yamazaki

IPC: H05B6/70 ,  H05B6/80 ,  H05B6/64

CPC classification number: H05B6/707 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68792 ,  H05B6/6411 ,  H05B6/806 ,  H05B2206/044

Abstract: A microwave heating apparatus includes a processing chamber for accommodating a target, a support device for supporting the target in the processing chamber and a microwave introducing device for generating microwaves to introduce them into the processing chamber. The processing chamber further includes a top wall having a plurality of microwave introduction ports to introduce the microwaves generated in the microwave introducing device into the processing chamber. Each of the microwave introduction ports has a rectangular shape having long sides and short sides parallel to inner wall surfaces of four sidewalls of the processing chamber, and the support device includes a support member to support the target and a rotating mechanism for rotating the supported target.

Abstract translation: 微波加热装置包括用于容纳目标的处理室，用于在处理室中支撑目标的支撑装置和用于产生微波以将它们引入处理室的微波引入装置。 处理室还包括具有多个微波引入端口的顶壁，以将在微波引入装置中产生的微波引入处理室。 每个微波引入端口具有矩形形状，其长边和短边平行于处理室的四个侧壁的内壁表面，并且支撑装置包括用于支撑目标的支撑构件和用于使支撑的目标物旋转的旋转机构 。

公开(公告)号：US20140283747A1

公开(公告)日：2014-09-25

申请号：US14219360

申请日：2014-03-19

Applicant: Tokyo Electron Limited

Inventor： Shigeru Kasai ,  Taro Ikeda ,  Yutaka Fujino

IPC: C23C16/44 ,  B05B1/00

CPC classification number: C23C16/4401 ,  B05B1/005 ,  B05B1/14 ,  C23C16/452 ,  H01J37/32192 ,  H01J37/32293 ,  H01J37/3244

Abstract: A plasma processing apparatus including a processing vessel 10 in which a plasma process is performed and a plasma generation antenna 20 having a shower plate 100 which supplies a first gas and a second gas into the processing vessel 10, performs the plasma process on a substrate with plasma generated by a surface wave formed on a surface of the shower plate 100 through a supply of a microwave. The shower plate 100 has multiple gas holes 133 configured to supply the first gas into the processing vessel 10 and multiple supply nozzles 160 configured to supply the second gas into the processing vessel 10, and the supply nozzles 160 are protruded vertically downwards from a bottom surface of the shower plate 100 and are provided at different positions from the gas holes 133.

Abstract translation: 一种等离子体处理装置，包括其中执行等离子体处理的处理容器10和具有向处理容器10供应第一气体和第二气体的喷淋板100的等离子体生成天线20，在基板上进行等离子体处理 由通过微波供给在淋浴板100的表面上形成的表面波产生的等离子体。 淋浴板100具有多个气孔133，其被配置为将第一气体供应到处理容器10中，并且多个供给喷嘴160构造成将第二气体供应到处理容器10中，并且供给喷嘴160从底表面垂直向下突出 并且设置在与气孔133不同的位置。

公开(公告)号：US12051564B2

公开(公告)日：2024-07-30

申请号：US17299958

申请日：2019-11-26

Applicant: Tokyo Electron Limited ,  TOHOKU UNIVERSITY

Inventor： Taro Ikeda ,  Satoru Kawakami ,  Masaki Hirayama

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/2007

Abstract: In a shower plate, a plasma processing apparatus, and a plasma processing method, improvement of in-plane uniformity of plasma on a stage is required. The shower plate according to an exemplary embodiment includes an upper dielectric disposed to face a stage and an upper electrode embedded in the upper dielectric. A distance between a bottom surface of the upper dielectric and the upper electrode is shorter in a peripheral portion than in a central portion.

公开(公告)号：US11842886B2

公开(公告)日：2023-12-12

申请号：US17063260

申请日：2020-10-05

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda ,  Hirokazu Ueda ,  Eiki Kamata ,  Mitsutoshi Ashida ,  Isao Gunji

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32266 ,  B08B7/0035 ,  H01J37/3244 ,  H01J2237/335

Abstract: A plasma processing method includes: supplying a gas into a processing container; and intermittently supplying microwave powers output from a plurality of microwave introducing modules into the processing container. In the intermittently supplying the microwave powers, the supply of all the microwave powers from the plurality of microwave introducing modules is periodically in an OFF state for a given time.

公开(公告)号：US11538667B2

公开(公告)日：2022-12-27

申请号：US17175782

申请日：2021-02-15

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda ,  Satoru Kawakami ,  Sumi Tanaka

IPC: H01J37/32

Abstract: A stage includes a stage body having a placement surface and a radio-frequency electrode embedded in the stage body. The stage body is made of ceramics, and the radio-frequency electrode extends in a thickness direction of the stage body in a region below an outer periphery of the placement surface.