公开(公告)号：US08414782B2

公开(公告)日：2013-04-09

申请号：US12522871

申请日：2008-01-21

Applicant: Takahiro Arakawa ,  Hiroyuki Kusakawa ,  Shuichi Shoji

Inventor： Takahiro Arakawa ,  Hiroyuki Kusakawa ,  Shuichi Shoji

IPC: C23F3/00 ,  B44C1/22

CPC classification number: C23F1/02 ,  B81B7/0077 ,  B81B2201/025 ,  B81B2201/06 ,  B81B2203/0118 ,  B81B2203/053 ,  C12N5/0075 ,  Y10T428/24479

Abstract: A process for producing a fluorocarbon microstructure capable of easily fabricating a three-dimensional fluorocarbon microstructure. The process for producing a fluorocarbon microstructure comprises a first processing step for forming, on a substrate (2), a film deposition portion with a given pattern made up of a through-hole figure by etching the substrate (2), a fabricating step for forming a fluorocarbon film (6) on an inner circumferential surface of a film deposition portion (9) to fabricate a fluorocarbon region surrounded by the fluorocarbon film (6), and a second processing step for fabricating the fluorocarbon microstructure protruding from a processing surface of the substrate (2) by etching a given region other than a fluorocarbon region on the substrate (2). Hence, the three-dimensional fluorocarbon microstructure can be fabricated which comprises a complicated structure that has conventionally been hard to fabricate. Thus, a microchannel (1) equipped with the three-dimensional fluorocarbon microstructure can be easily fabricated.

Abstract translation: 一种能够容易地制造三维碳氟化合物显微组织的氟碳微结构的制造方法。 制造碳氟化合物微结构的方法包括：第一处理步骤，用于通过蚀刻基板（2）在基板（2）上形成具有由通孔图形构成的给定图案的成膜部分， 在成膜部（9）的内周面上形成氟碳膜（6），以制造由碳氟化合物膜（6）包围的碳氟化合物区域;以及第二加工步骤，用于制造从处理表面 通过蚀刻在基板（2）上的碳氟化合物区域以外的给定区域而使基板（2）。 因此，可以制造三维碳氟化合物微结构，其包括通常难以制造的复杂结构。 因此，可以容易地制造装备有三维碳氟化合物微结构的微通道（1）。

公开(公告)号：US08288189B2

公开(公告)日：2012-10-16

申请号：US12906401

申请日：2010-10-18

Applicant: Chun-An Huang ,  Hsin-Yi Liao ,  Shih-Kuang Chiu

Inventor： Chun-An Huang ,  Hsin-Yi Liao ,  Shih-Kuang Chiu

IPC: H01L21/00 ,  H01L29/84

CPC classification number: H01L23/5389 ,  B81B7/007 ,  B81B2201/025 ,  B81B2207/096 ,  H01L24/24 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A package structure having an MEMS element includes: a packaging substrate having first and second wiring layers on two surfaces thereof and a chip embedded therein; a first dielectric layer disposed on the packaging substrate and the chip; a third wiring layer disposed on the first dielectric layer; a second dielectric layer disposed on the first dielectric layer and the third wiring layer and having a recessed portion; a lid disposed in the recessed portion and on the top surface of the second dielectric layer around the periphery of the recessed portion, wherein the portion of the lid on the top surface of the second dielectric layer is formed into a lid frame on which an adhering material is disposed to allow a substrate having an MEMS element to be attached to the packaging substrate with the MEMS element corresponding in position to the recessed portion, thereby providing a package structure of reduced size and costs with better electrical properties.

Abstract translation: 具有MEMS元件的封装结构包括：在其两个表面上具有第一和第二布线层的封装基板和嵌入其中的芯片; 设置在所述封装基板和所述芯片上的第一电介质层; 设置在所述第一电介质层上的第三布线层; 设置在所述第一电介质层和所述第三布线层上并具有凹部的第二电介质层; 设置在所述凹部的周围的所述凹部和所述第二电介质层的上表面上的盖，其中，所述第二电介质层的顶表面上的所述盖的部分形成为盖框架， 材料被设置为允许具有MEMS元件的基板被附接到包装基板，其中MEMS元件对应于凹部的位置，从而提供具有更好电气特性的尺寸和成本降低的封装结构。

公开(公告)号：US08269290B2

公开(公告)日：2012-09-18

申请号：US12461971

申请日：2009-08-31

Applicant: Kazuhiko Sugiura

Inventor： Kazuhiko Sugiura

IPC: H01L29/84

CPC classification number: G01P15/0802 ,  B81B2201/025 ,  B81C1/00238 ,  B81C2201/019 ,  G01P15/125 ,  H01L25/0657 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a semiconductor device, a first semiconductor substrate includes a first element on a first-surface side thereof, and a second semiconductor substrate includes a second element and a wiring part on a first-surface side thereof. The first semiconductor substrate and the second semiconductor substrate are attached with each other in such a manner that a first surface of the first semiconductor substrate is opposite a first surface of the second semiconductor substrate. A hole is provided from a second surface of the first semiconductor substrate to the wiring part through the first semiconductor substrate, and a sidewall of the hole is insulated. A drawing wiring part made of a conductive member fills the hole.

Abstract translation: 在半导体器件中，第一半导体衬底在其第一表面侧上包括第一元件，第二半导体衬底在其第一表面侧上包括第二元件和布线部。 第一半导体衬底和第二半导体衬底彼此附接，使得第一半导体衬底的第一表面与第二半导体衬底的第一表面相对。 通过第一半导体衬底从第一半导体衬底的第二表面到布线部分设置一个孔，并且孔的侧壁被绝缘。 由导电构件制成的绘图布线部分填充孔。

公开(公告)号：US20120130671A1

公开(公告)日：2012-05-24

申请号：US13299485

申请日：2011-11-18

Applicant: Robert D. Horning ,  Ryan Supino

Inventor： Robert D. Horning ,  Ryan Supino

IPC: G01P15/02 ,  F16F7/00 ,  G06F15/00

CPC classification number: B81B7/0016 ,  B81B2201/025 ,  B81B2207/07

Abstract: In an example, an interposer chip is provided. The interposer chip includes a base portion and a chip mounting portion. The interposer chip also includes one or more flexures connecting the base portion to the chip mounting portion. Additionally, a first plurality of projections extends from the base portion towards the chip mounting portion, and a second plurality of projections extends from the chip mounting portion towards the base portion and extending into interstices formed by first plurality of projections.

Abstract translation: 在一个示例中，提供了插入器芯片。 插入片包括基部和芯片安装部。 插入器芯片还包括将基部连接到芯片安装部分的一个或多个挠曲件。 此外，第一多个突起从基部朝向芯片安装部分延伸，并且第二多个突起从芯片安装部分朝向基部延伸并延伸到由第一多个突起形成的间隙中。

公开(公告)号：US20120043627A1

公开(公告)日：2012-02-23

申请号：US12861509

申请日：2010-08-23

Applicant: Yizhen Lin ,  Mark E. Schlarmann ,  Hemant D. Desai ,  Woo Tae Park

Inventor： Yizhen Lin ,  Mark E. Schlarmann ,  Hemant D. Desai ,  Woo Tae Park

IPC: H01L29/84 ,  H01L21/02

CPC classification number: H01L28/60 ,  B81B7/02 ,  B81B2201/025 ,  B81B2201/0264 ,  G01L9/0073 ,  G01L19/0092 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/088 ,  H01G5/18

Abstract: A device (20, 90) includes sensors (28, 30) that sense different physical stimuli. A pressure sensor (28) includes a reference element (44) and a sense element (52), and an inertial sensor (30) includes a movable element (54). Fabrication (110) entails forming (112) a first substrate structure (22, 92) having a cavity (36, 100), forming a second substrate structure (24) to include the sensors (28, 30), and coupling (128) the substrate structures so that the first sensor (28) is aligned with the cavity (36, 100) and the second sensor (30) is laterally spaced apart from the first sensor (28). Forming the second structure (24) includes forming (118) the sense element (52) from a material layer (124) of the second structure (24) and following coupling (128) of the substrate structures, concurrently forming (132) the reference element (44) and the movable element (54) in a wafer substrate (122) of the second structure (24).

Abstract translation: 装置（20,90）包括感测不同物理刺激的传感器（28,30）。 压力传感器（28）包括参考元件（44）和感测元件（52），惯性传感器（30）包括可移动元件（54）。 制造（110）需要形成（112）具有空腔（36,100）的第一衬底结构（22,92），形成包括传感器（28,30）的第二衬底结构（24）和耦合（128） 所述基板结构使得所述第一传感器（28）与所述空腔（36,100）对准，并且所述第二传感器（30）与所述第一传感器（28）横向间隔开。 形成第二结构（24）包括从第二结构（24）的材料层（124）和衬底结构的耦合（128）形成（118）感测元件（52），同时形成（132）参考 元件（44）和第二结构（24）的晶片衬底（122）中的可移动元件（54）。

公开(公告)号：US20110024852A1

公开(公告)日：2011-02-03

申请号：US12756305

申请日：2010-04-08

Applicant: Chuan-Wei WANG ,  Sheng-Ta Lee ,  Hsin-Hui Hsu

Inventor： Chuan-Wei WANG ,  Sheng-Ta Lee ,  Hsin-Hui Hsu

IPC: H01L29/84

CPC classification number: B81B3/0072 ,  B81B2201/025 ,  B81B2203/0118

Abstract: A micro electromechanical system (MEMS) spring element is disposed on a substrate, and includes a fixing portion and a moveable portion. The fixing portion is fixed on the substrate, and includes an insulating layer, a plurality of metal-fixing layers and a plurality of supporting-fixing layers. The insulating layer is disposed on the substrate. The metal-fixing layers are disposed above the insulating layer. The supporting-fixing layers are connected between the metal-fixing layers. The moveable portion has a first end and a second end. The first end is connected with the fixing portion, and the second end is suspended above the substrate. The moveable portion includes a plurality of metal layers and at least a supporting layer. The supporting layer is connected between the adjacent metal layers, and a hollow region is formed between the supporting layer and the adjacent metal layers. The deformation of the MEMS spring element generated because of the different thermal expansion may be avoided and the working performance of the MEMS spring element can be improved.

Abstract translation: 微机电系统（MEMS）弹簧元件设置在基板上，并且包括固定部分和可移动部分。 固定部固定在基板上，具有绝缘层，多个金属固定层和多个支撑固定层。 绝缘层设置在基板上。 金属固定层设置在绝缘层的上方。 支撑固定层连接在金属固定层之间。 可移动部分具有第一端和第二端。 第一端与固定部分连接，第二端悬挂在基板上。 可移动部分包括多个金属层和至少一个支撑层。 支撑层连接在相邻的金属层之间，并且在支撑层和相邻金属层之间形成中空区域。 可以避免由于不同的热膨胀而产生的MEMS弹簧元件的变形，并且可以提高MEMS弹簧元件的工作性能。

公开(公告)号：US07871894B2

公开(公告)日：2011-01-18

申请号：US11541376

申请日：2006-09-27

Applicant: Pietro Corona ,  Flavio Francesco Villa ,  Gabriele Barlocchi

Inventor： Pietro Corona ,  Flavio Francesco Villa ,  Gabriele Barlocchi

IPC: H01L21/76

CPC classification number: B81C1/00158 ,  B81B2201/025 ,  B81B2203/0109 ,  B81B2203/0315

Abstract: A process for manufacturing a suspended structure of semiconductor material envisages the steps of: providing a monolithic body of semiconductor material having a front face; forming a buried cavity within the monolithic body, extending at a distance from the front face and delimiting, with the front face, a surface region of the monolithic body, said surface region having a first thickness; carrying out a thickening thermal treatment such as to cause a migration of semiconductor material of the monolithic body towards the surface region and thus form a suspended structure above the buried cavity, the suspended structure having a second thickness greater than the first thickness. The thickening thermal treatment is an annealing treatment.

Abstract translation: 制造半导体材料的悬浮结构的方法设想的步骤：提供具有正面的半导体材料的整体; 在所述整体式主体内形成掩埋空腔，所述掩埋腔在所述前表面的一定距离处延伸并且与所述前表面一起界定所述整体式主体的表面区域，所述表面区域具有第一厚度; 进行增稠热处理，使得整体式体的半导体材料朝向表面区域移动，从而在掩埋空腔之上形成悬浮结构，该悬浮结构的第二厚度大于第一厚度。 增稠热处理是退火处理。

公开(公告)号：US20100193884A1

公开(公告)日：2010-08-05

申请号：US12363916

申请日：2009-02-02

Applicant: Woo Tae Park ,  Heinz Loreck ,  Lisa Karlin

Inventor： Woo Tae Park ,  Heinz Loreck ,  Lisa Karlin

IPC: B81B7/02 ,  H01L21/00 ,  H01L21/603 ,  H01L21/302 ,  H01L29/84 ,  G01P15/02

CPC classification number: G01P15/0802 ,  B81B2201/025 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019

Abstract: A method and apparatus are described for fabricating a high aspect ratio MEMS device by using metal thermocompression bonding to assemble a reference wafer (100), a bulk MEMS active wafer (200), and a cap wafer (300) to provide a proof mass (200d) formed from the active wafer with bottom and top capacitive sensing electrodes (115, 315) which are hermetically sealed from the ambient environment by sealing ring structures (112/202/200a/212/312 and 116/206/200e/216/316).

Abstract translation: 描述了通过使用金属热压接合来组装参考晶片（100），体MEMS MEMS晶片（200）和盖晶片（300）来制造高纵横比MEMS器件的方法和装置，以提供检验质量（ （112/202 / 200a / 212/312和116/206 / 200e / 216/312）与底部和顶部的电容感测电极（115,315）形成的活动晶片，其通过密封环状结构与环境环境密封， 316）。

公开(公告)号：US07754617B2

公开(公告)日：2010-07-13

申请号：US12098052

申请日：2008-04-04

Applicant: Thomas Kieran Nunan

Inventor： Thomas Kieran Nunan

IPC: H01L21/302

CPC classification number: B81C1/00666 ,  B81B2201/025 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169

Abstract: A method of forming a thick polysilicon layer for a MEMS inertial sensor includes forming a first amorphous polysilicon film on a substrate in an elevated temperature environment for a period of time such that a portion of the amorphous polysilicon film undergoes crystallization and grain growth at least near the substrate. The method also includes forming an oxide layer on the first amorphous polysilicon film, annealing the first amorphous polysilicon film in an environment of about 1100° C. or greater to produce a crystalline film, and removing the oxide layer. Lastly, the method includes forming a second amorphous polysilicon film on a surface of the crystalline polysilicon film in an elevated temperature environment for a period of time such that a portion of the second amorphous polysilicon film undergoes crystallization and grain growth at least near the surface of the crystalline polysilicon film.

Abstract translation: 形成用于MEMS惯性传感器的厚多晶硅层的方法包括在高温环境中在衬底上形成第一非晶多晶硅膜一段时间，使得非晶多晶硅膜的一部分经历结晶并且晶粒生长至少接近 底物。 该方法还包括在第一非晶多晶硅膜上形成氧化物层，在约1100℃或更高的环境中退火第一非晶多晶硅膜以产生结晶膜，并除去氧化物层。 最后，该方法包括在高温环境下在晶体多晶硅膜的表面上形成第二非晶多晶硅膜一段时间，使得第二非晶多晶硅膜的一部分在至少在表面附近发生结晶和晶粒生长 晶体多晶硅膜。

公开(公告)号：US20100167014A1

公开(公告)日：2010-07-01

申请号：US12522871

申请日：2008-01-21

Applicant: Takahiro Arakawa ,  Hiroyuki Kusakawa ,  Shuichi Shoji

Inventor： Takahiro Arakawa ,  Hiroyuki Kusakawa ,  Shuichi Shoji

IPC: C23F1/02 ,  B32B3/02

CPC classification number: C23F1/02 ,  B81B7/0077 ,  B81B2201/025 ,  B81B2201/06 ,  B81B2203/0118 ,  B81B2203/053 ,  C12N5/0075 ,  Y10T428/24479

Abstract: A process for producing a fluorocarbon microstructure capable of easily fabricating a three-dimensional fluorocarbon microstructure. The process for producing a fluorocarbon microstructure comprises a first processing step for forming, on a substrate (2), a film deposition portion with a given pattern made up of a through-hole figure by etching the substrate (2), a fabricating step for forming a fluorocarbon film (6) on an inner circumferential surface of a film deposition portion (9) to fabricate a fluorocarbon region surrounded by the fluorocarbon film (6), and a second processing step for fabricating the fluorocarbon microstructure protruding from a processing surface of the substrate (2) by etching a given region other than a fluorocarbon region on the substrate (2). Hence, the three-dimensional fluorocarbon microstructure can be fabricated which comprises a complicated structure that has conventionally been hard to fabricate. Thus, a microchannel (1) equipped with the three-dimensional fluorocarbon microstructure can be easily fabricated.

Abstract translation: 一种能够容易地制造三维碳氟化合物显微组织的氟碳微结构的制造方法。 制造碳氟化合物微结构的方法包括：第一处理步骤，用于通过蚀刻基板（2）在基板（2）上形成具有由通孔图形构成的给定图案的成膜部分， 在成膜部（9）的内周面上形成氟碳膜（6），以制造由碳氟化合物膜（6）包围的碳氟化合物区域;以及第二加工步骤，用于制造从处理表面 通过蚀刻在基板（2）上的碳氟化合物区域以外的给定区域而使基板（2）。 因此，可以制造三维碳氟化合物微结构，其包括通常难以制造的复杂结构。 因此，可以容易地制造装备有三维碳氟化合物微结构的微通道（1）。