公开(公告)号：US20030186514A1

公开(公告)日：2003-10-02

申请号：US10391632

申请日：2003-03-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Aya Imada ,  Tohru Den

IPC: H01L021/326 ,  H01L021/479

CPC classification number: H01L21/326 ,  B81B1/00 ,  B81B2201/047 ,  B81C2201/0114 ,  Y10S977/70

Abstract: A structure having projections is provided. The structure having projections comprises a first projection formed on a first layer containing a first material, and a plurality of second projections formed around the first projection and containing a material capable of being subjected to anodic oxidation.

Abstract translation: 提供了具有突起的结构。 具有突起的结构包括形成在包含第一材料的第一层上的第一突起和形成在第一突起周围的多个第二突起，并且包含能够进行阳极氧化的材料。

公开(公告)号：US20010054316A1

公开(公告)日：2001-12-27

申请号：US09929070

申请日：2001-08-15

Inventor： Hiroshi Ohji ,  Kazuhiko Tsutsumi ,  Patrick J. French

IPC: G01P015/00 ,  G01L001/00

CPC classification number: G01P15/125 ,  B81B2201/025 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00182 ,  B81C2201/0114 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0817 ,  G01P2015/0828

Abstract: An inertia force sensor having a mass body (11) which moves when force is applied to the sensor, at least one holding beam (12) for holding the mass body (11), and an anchor portion (13) for fixing an end portion of the holding beam (12), the sensor being designed to detect inertia force, which acts on the mass body (11), on the basis of a movement of the mass body (11). The sensor is characterized in that the mass body (11) is composed of a free standing structure (9) which is formed by removing an inner part of a silicon substrate (1) therefrom by means of an etching process within a single step, and the anchor portion (13) is composed of at least a part of a main body of the silicon substrate. Because the inertia force sensor is composed of single crystal silicon, its mechanical properties and reliability may be highly improved.

Abstract translation: 一种惯性力传感器，其具有当向所述传感器施加力时移动的质量体（11），用于保持所述质量体（11）的至少一个保持梁（12）和用于固定所述质量体 所述传感器被设计成基于所述质量体（11）的运动来检测作用在所述质量体（11）上的惯性力。 传感器的特征在于，质量体（11）由通过在一个步骤内的蚀刻工艺除去硅衬底（1）的内部而形成的自立式结构（9）构成，以及 所述锚定部（13）由所述硅基板的主体的至少一部分构成。 由于惯性力传感器由单晶硅组成，因此其机械性能和可靠性可能得到很大改善。

公开(公告)号：US09527729B2

公开(公告)日：2016-12-27

申请号：US14182659

申请日：2014-02-18

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

Inventor： Eric Ollier

IPC: B81C1/00

CPC classification number: B81C1/00515 ,  B81C1/00206 ,  B81C1/00412 ,  B81C1/00626 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/038

Abstract: Process for fabrication of a micromechanical and/or nanomechanical structure comprising the following steps, starting from an element comprising a support substrate and a sacrificial layer: a) formation of a first layer, at least part of which is porous, b) formation on the first layer of a layer made of one (or several) materials providing the mechanical properties of the structure, called the intermediate layer, c) formation on the intermediate layer of a second layer, at least part of which is porous, d) formation of said structure in the stack composed of the first layer, the intermediate layer and the second layer, e) release of said structure by at least partial removal of the sacrificial layer.

Abstract translation: 该方法包括形成第一层即硅层（6），其部分是多孔的，并且在第一层上形成层间（16）以确保结构的机械性能。 第二层形成在层间，其中第二层的一部分是多孔的。 该结构形成在第一层，层间和第二层的堆叠中，其中第一和第二层由多孔硅锗制成，并且层间由非多孔硅锗制成。 通过牺牲层（4）的部分抽出来释放结构。

公开(公告)号：US20160355943A1

公开(公告)日：2016-12-08

申请号：US15242516

申请日：2016-08-20

Applicant: International Business Machines Corporation

Inventor： Stefan Harrer ,  Stephen M. Rossnagel ,  Philip S. Waggoner

IPC: C25D11/02 ,  C25D11/26 ,  C25D11/34 ,  B81C1/00

CPC classification number: C25D11/022 ,  B81C1/00071 ,  B81C2201/0114 ,  C25D7/04 ,  C25D11/26 ,  C25D11/34

Abstract: Nanofluidic passages such as nanochannels and nanopores are closed or opened in a controlled manner through the use of a feedback system. An oxide layer is grown or removed within a passage in the presence of an electrolyte until the passage reaches selected dimensions or is closed. The change in dimensions of the nanofluidic passage is measured during fabrication. The ionic current level through the passage can be used to determine passage dimensions. Fluid flow through an array of fluidic elements can be controlled by selective oxidation of fluidic passages between elements.

公开(公告)号：US09422154B2

公开(公告)日：2016-08-23

申请号：US13021544

申请日：2011-02-04

Applicant: Stefan Harrer ,  Stephen M. Rossnagel ,  Philip S. Waggoner

Inventor： Stefan Harrer ,  Stephen M. Rossnagel ,  Philip S. Waggoner

IPC: B81C1/00

CPC classification number: C25D11/022 ,  B81C1/00071 ,  B81C2201/0114 ,  C25D7/04 ,  C25D11/26 ,  C25D11/34

Abstract: Nanofluidic passages such as nanochannels and nanopores are closed or opened in a controlled manner through the use of a feedback system. An oxide layer is grown or removed within a passage in the presence of an electrolyte until the passage reaches selected dimensions or is closed. The change in dimensions of the nanofluidic passage is measured during fabrication. The ionic current level through the passage can be used to determine passage dimensions. Fluid flow through an array of fluidic elements can be controlled by selective oxidation of fluidic passages between elements.

Abstract translation: 纳米流体通道如纳米通道和纳米孔通过使用反馈系统以受控的方式封闭或打开。 在存在电解液的情况下，在通道内生长或除去氧化物层，直到通道达到所选尺寸或闭合。 在制造过程中测量纳米流体通道的尺寸变化。 通过通道的离子电流水平可用于确定通道尺寸。 通过流体元件阵列的流体流动可以通过元件之间的流体通道的选择性氧化来控制。

公开(公告)号：US20150274516A1

公开(公告)日：2015-10-01

申请号：US14182659

申请日：2014-02-18

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

Inventor： Eric OLLIER

IPC: B81C1/00

CPC classification number: B81C1/00515 ,  B81C1/00206 ,  B81C1/00412 ,  B81C1/00626 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/038

Abstract: Process for fabrication of a micromechanical and/or nanomechanical structure comprising the following steps, starting from an element comprising a support substrate and a sacrificial layer: a) formation of a first layer, at least part of which is porous, b) formation on the first layer of a layer made of one (or several) materials providing the mechanical properties of the structure, called the intermediate layer, c) formation on the intermediate layer of a second layer, at least part of which is porous, d) formation of said structure in the stack composed of the first layer, the intermediate layer and the second layer, e) release of said structure by at least partial removal of the sacrificial layer.

Abstract translation: 制造微机械和/或纳米机械结构的方法，包括以下步骤：从包括支撑基底和牺牲层的元件开始：a）形成第一层，其中至少一部分是多孔的，b）在 第一层由一种（或多种）材料制成，提供称为中间层的结构的机械性能，c）在第二层的中间层上形成，其中至少一部分是多孔的，d）形成 由第一层，中间层和第二层构成的堆叠中的所述结构，e）通过至少部分去除牺牲层来释放所述结构。

公开(公告)号：US20100327380A1

公开(公告)日：2010-12-30

申请号：US12918660

申请日：2009-04-28

Applicant: Chienliu Chang

Inventor： Chienliu Chang

IPC: H01L29/84 ,  H01L21/30

CPC classification number: B06B1/0292 ,  B81B2201/038 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/00476 ,  B81C2201/0114

Abstract: In a method of manufacturing a capacitive electromechanical transducer, a first electrode (8) is formed on a substrate (4), an insulating layer (9) which has an opening (6) leading to the first electrode is formed on the first electrode (8), and a sacrificial layer is formed on the insulating layer. A membrane (3) having a second electrode (1) is formed on the sacrificial layer, and an aperture is provided as an etchant inlet in the membrane. The sacrificial layer is etched to form a cavity (10), and then the aperture serving as an etchant inlet is sealed. The etching is executed by electrolytic etching in which a current is caused to flow between the first electrode (8) and an externally placed counter electrode through the opening (6) and the aperture of the membrane.

Abstract translation: 在制造电容式机电换能器的方法中，在基板（4）上形成第一电极（8），在第一电极上形成具有通向第一电极的开口（6）的绝缘层（9） 8），并且在绝缘层上形成牺牲层。 在牺牲层上形成具有第二电极（1）的膜（3），并且在膜中设置有作为蚀刻剂入口的孔。 蚀刻牺牲层以形成空腔（10），然后密封用作蚀刻剂入口的孔。 蚀刻通过电解蚀刻进行，其中使电流通过开口（6）和膜的孔径在第一电极（8）和外部放置的对电极之间流动。

公开(公告)号：US20090255820A1

公开(公告)日：2009-10-15

申请号：US12281595

申请日：2007-02-06

Applicant: Denis Buttard

Inventor： Denis Buttard

IPC: H01L21/288 ,  C25B9/00 ,  B23H9/00

CPC classification number: B81C1/00126 ,  B81C2201/0114 ,  C25D1/00 ,  C25D1/006 ,  C25D5/02 ,  C25D5/16 ,  C25D7/12 ,  C25D17/005 ,  C25F3/14 ,  H01L21/02203 ,  H01L21/02238 ,  H01L21/02258 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/31675

Abstract: The invention relates to a method and to a device for electrochemical micro- and/or nano-structuring, which are reliable, fast, simple, easy to implement, and reproducible. For this purpose, the invention provides a method of electrochemically structuring a sample (12) of conductive or semiconductor material that has opposite front and rear faces (11 and 13). The method comprises the steps consisting: in putting at least the front face (11) of the sample (12) into contact with at least one electrolytic solution (4) stored in at least one tank (3); in placing at least one counter-electrode (6) in an electrolyte (4) in register with the front face (11) of the sample (12), said front face (11) being for structuring; in placing at least one working electrode (7) presenting structuring patterns (14) into dry ohmic contact with the rear face (13) of the sample (12); and in applying an electric current between at least one counter-electrode (6) and at one least working electrode (7) that are substantially in register with each other in order to obtain an electrochemical reaction at the interface between the front face (11) of the sample (12) and the electrolyte (4) with current density that is modulated by the structuring patterns (14) of the working electrode (7) in order to perform etching and/or deposition on the front face (11) of the sample (12).

Abstract translation: 本发明涉及电化学微观和/或纳米结构的方法和装置，它们是可靠的，快速的，简单的，易于实现的和可重复的。 为此，本发明提供了一种电化学构造具有相对的前表面和后表面（11和13）的导电或半导体材料的样品（12）的方法。 该方法包括以下步骤：至少将样品（12）的前表面（11）与至少一个储存在至少一个罐（3）中的电解液（4）接触; 在将至少一个对电极（6）放置在与样品（12）的前表面（11）对准的电解质（4）中，所述前表面（11）用于结构化; 在将至少一个工作电极（7）放置成与所述样品（12）的后表面（13）干法欧姆接触的结构图案（14）中; 并且在基本上彼此对准的至少一个对电极（6）和至少一个至少工作电极（7）之间施加电流，以便在所述前表面（11）之间的界面处获得电化学反应， 的样品（12）和电解质（4），其电流密度由工作电极（7）的结构图案（14）调制，以便在所述工作电极（7）的正面（11）上进行蚀刻和/或沉积 样品（12）。

公开(公告)号：US07566939B2

公开(公告)日：2009-07-28

申请号：US11149921

申请日：2005-06-10

Applicant: Michel Despont ,  Roy H. Magnuson ,  Ute Drechsler

Inventor： Michel Despont ,  Roy H. Magnuson ,  Ute Drechsler

IPC: H01L29/82

CPC classification number: H01L21/30604 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C1/00801 ,  B81C2201/0107 ,  B81C2201/0114 ,  B81C2201/0133 ,  C23F13/14

Abstract: A method for protecting a material of a microstructure comprising the material and a noble metal layer against undesired galvanic etching during manufacture, the method comprises forming on the structure a sacrificial metal layer having a lower redox potential than the material, the sacrificial metal layer being electrically connected to the noble metal layer.

Abstract translation: 一种用于在制造期间保护包含该材料的微结构材料和贵金属层以防止不期望的电化学蚀刻的方法，所述方法包括在所述结构上形成具有比所述材料更低的氧化还原电位的牺牲金属层，所述牺牲金属层是电 连接到贵金属层。

公开(公告)号：US07153440B2

公开(公告)日：2006-12-26

申请号：US10242213

申请日：2002-09-12

Applicant: Bevan Staple ,  Jillian Buriak

Inventor： Bevan Staple ,  Jillian Buriak

IPC: C23F1/00

CPC classification number: B82Y30/00 ,  B81C1/00476 ,  B81C1/00801 ,  B81C2201/0114 ,  B81C2201/0133 ,  B81C2201/0139 ,  B81C2201/053

Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.