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    Microelectromechanical device having a common ground plane layer and a set of contact teeth and method for making aspects thereof
    31.
    发明申请
    Microelectromechanical device having a common ground plane layer and a set of contact teeth and method for making aspects thereof 有权
    具有公共接地层和一组接触齿的微机电装置及其制造方法

    公开(公告)号：US20060125031A1

    公开(公告)日：2006-06-15

    申请号：US11332715

    申请日：2006-01-13

    Applicant: Chia-Shing Chou

    Inventor： Chia-Shing Chou

    IPC: H01L21/00 ,  H01L29/82

    CPC classification number: B81C1/00611 ,  B81C2201/0121 ,  H01H59/0009 ,  H01H2059/0072 ,  Y10T29/49105

    Abstract: The present invention relates to MEM switches. More specifically, the present invention relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer

    Abstract translation: 本发明涉及MEM开关。 更具体地，本发明涉及一种用于制造具有公共接地层的MEM开关的系统和方法。 制造MEM开关的一种方法包括：在衬底上构图公共接地层; 在公共接地层上形成介电层; 通过所述电介质层沉积DC电极区域以接触所述公共接地层; 以及在所述DC电极区域上沉积导电层，使得所述导电层的区域接触所述DC电极区域，使得所述公共接地层提供所述导电层的区域的公共接地

    Method for registering a deposited material with channel plate channels, and switch produced using same
    32.
    发明授权
    Method for registering a deposited material with channel plate channels, and switch produced using same 失效
    用于登记具有通道板通道的沉积材料的方法，以及使用其制造的开关

    公开(公告)号：US06809277B2

    公开(公告)日：2004-10-26

    申请号：US10349712

    申请日：2003-01-22

    Applicant: Marvin Glenn Wong ,  Paul Thomas Carson

    Inventor： Marvin Glenn Wong ,  Paul Thomas Carson

    IPC: H01H2900

    CPC classification number: B81C1/00611 ,  B81B2201/018 ,  B81C2201/0121 ,  H01H1/0036 ,  H01H2029/008

    Abstract: A method for depositing material on a channel plate such that the material is registered to one or more channels formed in the channel plate includes filling at least one of the channels with a resist that is not wetted by the material; depositing the material on at least a region of the channel plate that includes at least part of the resist; and then removing the resist. The method may be used, in one embodiment, to apply an adhesive or gasket material that is used in assembling a switch.

    Abstract translation: 一种用于在通道板上沉积材料使得该材料与通道板中形成的一个或多个通道对准的方法包括用未被该材料润湿的抗蚀剂填充至少一个通道; 将所述材料沉积在所述通道板的至少一部分，所述区域包括所述抗蚀剂的至少一部分; 然后除去抗蚀剂。 在一个实施例中，可以使用该方法来施加用于组装开关的粘合剂或垫圈材料。

    MEMS DEVICE AND METHOD FOR FABRICATING MEMS DEVICES
    40.
    发明申请
    MEMS DEVICE AND METHOD FOR FABRICATING MEMS DEVICES 有权
    用于制造MEMS器件的MEMS器件和方法

    公开(公告)号：US20140374851A1

    公开(公告)日：2014-12-25

    申请号：US13926652

    申请日：2013-06-25

    Applicant: Lianjun Liu

    Inventor： Lianjun Liu

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81B3/0021 ,  B81B2207/096 ,  B81C1/00134 ,  B81C1/00611 ,  B81C2201/0121 ,  B81C2203/00

    Abstract: A method (60) entails providing a substrate (34) with a structural layer (30) having a thickness (40). A partial etch process is performed at locations (82) on the structural layer (30) so that a portion (92) of the structural layer (30) remains at the locations (82). An oxidation process is performed at the locations which consumes the remaining portion of the structural layer and forms an oxide (36) having a thickness (42) that is similar to the thickness (40) of the structural layer (30). The oxide (36) electrically isolates microstructures (28) in the structural layer (30), thus producing a structure (22). A device substrate (120) is coupled to the structure (22) such that a cavity (48) is formed between them. An active region (44) is formed in the device substrate (120). A short etch process can be performed to expose the microstructures from an overlying oxide layer (110).

    Abstract translation: 方法（60）需要向衬底（34）提供具有厚度（40）的结构层（30）。 在结构层（30）上的位置（82）处执行部分蚀刻工艺，使得结构层（30）的一部分（92）保持在位置（82）处。 在消耗结构层的剩余部分的位置处进行氧化处理，并形成具有类似于结构层（30）的厚度（40）的厚度（42）的氧化物（36）。 氧化物（36）电隔离结构层（30）中的微结构（28），从而产生结构（22）。 器件衬底（120）耦合到结构（22），使得在它们之间形成空腔（48）。 在器件衬底（120）中形成有源区（44）。 可以进行短蚀刻工艺以从上覆的氧化物层（110）露出微结构。

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