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    SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
    31.
    发明申请
    SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF 有权
    半导体结构及其制造方法

    公开(公告)号：US20170029272A1

    公开(公告)日：2017-02-02

    申请号：US15222006

    申请日：2016-07-28

    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

    Inventor： PENG REN

    IPC: B81C1/00 ,  H01L23/00 ,  H01L21/67 ,  H01L21/687 ,  H01L23/48 ,  H01L21/768

    CPC classification number: B81C1/00801 ,  B81C2201/0154 ,  B81C2201/05 ,  B81C2203/0778 ,  H01L21/67063 ,  H01L21/6715 ,  H01L21/687 ,  H01L21/76861 ,  H01L21/76873 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02317 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/13024

    Abstract: A method for fabricating a semiconductor structure includes providing a substrate with a first surface and a second surface, wherein at least one soldering pad is formed on the first surface of the substrate. The method also includes forming at least one via to expose each soldering pad by etching the substrate from the second surface, forming a seed layer to cover the second surface of the substrate and the sidewall and the bottom surfaces of each via, and then forming a redistribution metal layer over a portion of the seed layer formed on the sidewall and the bottom surfaces of each via and the second surface of the substrate surrounding each via. The method further includes alternately performing a pre-wetting process and a chemical etching process to completely remove the portion of the seed layer not covered by the redistribution metal layer.

    Abstract translation: 一种制造半导体结构的方法包括：提供具有第一表面和第二表面的基底，其中在所述基底的第一表面上形成至少一个焊盘。 该方法还包括形成至少一个通孔以通过从第二表面蚀刻衬底来暴露每个焊盘，形成晶种层以覆盖衬底的第二表面和每个通孔的侧壁和底表面，然后形成 再分布金属层在形成在每个通孔的侧壁和底表面上的种子层的一部分上，以及围绕每个通孔的基板的第二表面。 该方法还包括交替地执行预润湿处理和化学蚀刻工艺以完全去除未被再分布金属层覆盖的种子层的部分。

    MAGNETIC PATTERNING METHOD AND SYSTEM
    34.
    发明申请
    MAGNETIC PATTERNING METHOD AND SYSTEM 审中-公开
    磁性图案方法与系统

    公开(公告)号：US20140315293A1

    公开(公告)日：2014-10-23

    申请号：US14318775

    申请日：2014-06-30

    Applicant: Yeda Research and Development Co., Ltd.

    Inventor： Ron NAAMAN ,  Amos BARDEA ,  Alexander YOFFE

    IPC: C12M1/12 ,  C12M1/02 ,  H01F41/16

    CPC classification number: C12M23/06 ,  B81C1/00031 ,  B81C2201/0154 ,  B81C2201/0198 ,  C12M27/00 ,  H01F41/16

    Abstract: The present invention relates to a method and apparatus for patterning a substrate. The method comprises providing at least one magnetic pattern generator configured and operable to modulate the magnetic field to induce varying magnetic properties to a magnetic field according to a desired pattern; applying the modulated magnetic field in the vicinity of the substrate creating a certain pattern of regions of interaction to be obtained on top of the substrate; and; interacting the substrate with magnetic particles, while under the application of the modulated magnetic field, the magnetic particles being attracted to selected regions of interaction defined by the certain pattern while being substantially not attracted to regions outside the regions of interaction, thus creating on top of the substrate the certain pattern of regions interacted with the magnetic particles. The desired pattern corresponds to a certain pattern for a predetermined magnetic field profile and at a predetermined distance from the magnetic pattern generator, where the sample is to be located.

    Abstract translation: 本发明涉及一种用于图案化衬底的方法和装置。 该方法包括提供至少一个磁图案发生器，其被配置和可操作以根据期望的图案调制磁场以对磁场引起变化的磁特性; 将调制的磁场施加在衬底附近，产生在衬底的顶部上获得的相互作用区域的特定图案; 和; 在将基底与磁性颗粒相互作用的同时，在调制磁场的应用下，磁性颗粒被吸引到由特定图案定义的相互作用区域之间，同时基本上不被吸引到相互作用区域之外的区域，从而在 基板的某些图案区域与磁性颗粒相互作用。 期望的图案对应于预定磁场分布的特定图案，并且距离磁图案发生器预定距离处，其中样本将被定位。

    Method for producing localized patterns
    37.
    发明授权
    Method for producing localized patterns 有权
    生产局部模式的方法

    公开(公告)号：US08048712B2

    公开(公告)日：2011-11-01

    申请号：US12879473

    申请日：2010-09-10

    Applicant: Mohamed Benwadih

    Inventor： Mohamed Benwadih

    IPC: H01L51/40

    CPC classification number: H01L51/0004 ,  B81C1/00492 ,  B81C2201/0154 ,  H01L51/0541 ,  H01L51/5012

    Abstract: A method for producing at least one pattern on a top surface of a support made from a material presenting a first thermal conductivity comprises a step of arranging of a mask made from a material presenting a second thermal conductivity and comprising at least one recess having a shape corresponding to that of the pattern, in contact with a bottom surface of the support, the ratio of the first conductivity over the second conductivity being greater than or equal to 2, or smaller than or equal to ½, throughout the duration of the method. The method further comprises a step of depositing on the top surface a solution comprising a material designed to form the pattern, and a step of evaporating the solution.

    Abstract translation: 在由具有第一热导率的材料制成的支撑体的顶表面上产生至少一种图案的方法包括布置由具有第二热导率的材料制成的掩模的步骤，并且包括至少一个具有形状 对应于与支撑体的底表面接触的图案的图案，在整个方法的整个持续时间期间，第一导电率在第二导电率上的比率大于或等于2，或小于或等于½。 该方法还包括在顶表面上沉积包含设计成形成图案的材料的溶液的步骤和蒸发该溶液的步骤。

    STRUCTURED LAYER DEPOSITION ON PROCESSED WAFERS USED IN MICROSYSTEM TECHNOLOGY
    38.
    发明申请
    STRUCTURED LAYER DEPOSITION ON PROCESSED WAFERS USED IN MICROSYSTEM TECHNOLOGY 审中-公开
    微结构技术中使用的加工过程的结构层沉积

    公开(公告)号：US20100311248A1

    公开(公告)日：2010-12-09

    申请号：US12664272

    申请日：2008-06-16

    Applicant: Roy Knechtel

    Inventor： Roy Knechtel

    IPC: H01L21/30 ,  B05C3/20

    CPC classification number: C23C16/042 ,  B81C1/0038 ,  B81C2201/0154 ,  B81C2201/038 ,  C23C14/042 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to a method and a through-vapor mask for depositing layers in a structured manner by means of a specially designed coating mask which has structures that accurately fit into complementary alignment structures of the microsystem wafer to be coated in a structured manner such that the mask and the wafer can be accurately aligned relative to one another. Very precisely defined portions on the microsystem wafer are coated through holes in the coating mask, e.g. by mans of sputtering, CVD, or to evaporation processes.

    Abstract translation: 本发明涉及一种用于通过特殊设计的涂层掩模以结构化方式沉积层的方法和通气蒸气掩模，所述涂层掩模具有能够以结构化方式精确地配合到要被涂覆的微系统晶片的互补对准结构的结构，使得 掩模和晶片可以相对于彼此精确地对准。 在微系统晶片上的非常精确地限定的部分通过涂覆掩模中的孔涂覆，例如， 通过溅射，CVD或蒸发过程。

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