Abstract:
A mechanical component production method of a MEMS/NEMS structure from a monocrystalline silicon substrate includes forming anchoring zones in one face of the substrate. A lower protective layer, non-silicon, obtained by epitaxy from the face of the substrate is formed on the face. A silicon layer obtained by epitaxy from the lower protective layer is formed on the lower protective layer. An upper protective layer is formed on the silicon layer. The upper protective, silicon and lower protective layers are etched according to a pattern defining the component, until the substrate is reached, providing access routes to the substrate. A protective layer is formed on the walls formed by the etching in the epitaxied silicon layer. The component is released by isotropic etching of the substrate from the access routes, wherein the isotropic etching does not attack the lower and upper protective layers and the protective layer of the walls.
Abstract:
System and method for forming a structure including a MEMS device structure. In order to prevent warpage of a substrate arising from curing process for a sacrificial material (such as a photoresist), and from subsequent high temperature process steps, an improved sacrificial material comprises (i) a polymer and (ii) a foaming agent or special function group. The structure can be formed by forming a trench in a substrate and filling the trench with a sacrificial material. The sacrificial material includes (i) a polymer and (ii) a foaming agent or special function group. After further process steps are completed, the sacrificial material is removed from the trench.
Abstract:
In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the microelectromechanical systems device.
Abstract:
A production method for chips, in which as many method steps as possible are carried out in the wafer composite, that is, in parallel for a plurality of chips disposed on a wafer. This is a method for producing a plurality of chips whose functionality is implemented on the basis of the surface layer of a substrate. In this method, the surface layer is patterned and at least one cavity is produced below the surface layer, so that the individual chip regions are connected to each other and/or to the rest of the substrate by suspension webs only, and/or so that the individual chip regions are connected to the substrate layer below the cavity via supporting elements in the region of the cavity. The suspension webs and/or supporting elements are cut when the chips are separated. The patterned and undercut surface layer of the substrate is embedded in a plastic mass before the chips are separated.
Abstract:
A method of producing a MEMS device provides an apparatus having structure on a first layer that is proximate to a substrate. The apparatus has a space proximate to the structure. The method adds doped material to the space. The doped material dopes at least a portion of the first layer.
Abstract:
The invention concerns a method of producing at least one mechanical component of a MEMS or NEMS structure from a monocrystalline silicon substrate, comprising the steps of: forming anchoring zones in one face of the substrate to delimit the mechanical component, forming, on the face of the substrate, a lower protective layer made of material other than silicon and obtained by epitaxy from the face of the substrate, forming, on the lower protective layer, a silicon layer obtained by epitaxy from the lower protective layer, forming an upper protective layer on the silicon layer, etching the upper protective layer, the silicon layer and the lower protective layer, according to a pattern defining the mechanical component, until the substrate is reached and to provide access routes to the substrate, forming a protective layer on the walls formed by the etching of the pattern of the mechanical component in the epitaxied silicon layer, releasing the mechanical component by isotropic etching of the substrate from the access routes to the substrate, wherein said isotropic etching does not attack the lower and upper protective layers and the protective layer of the walls.
Abstract:
A method of dividing a wafer having a plurality of micro electro mechanical systems and a plurality of streets for partitioning the micro electro mechanical systems formed on the front surface of a wafer substrate, the method comprising a protective tape affixing step for affixing a protective tape to the front surface of the wafer; a cut groove-forming step for forming a cut groove by cutting the wafer having the protective tape affixed thereto along the streets from the back surface of the wafer substrate, leaving a cutting margin having a predetermined thickness on the front surface side of the wafer substrate; and a cutting step for cutting the cutting margins by applying a laser beam to the cutting margins of the cut grooves formed along the streets.
Abstract:
Simple but practical methods to dice a CMOS-MEMS multi-project wafer are proposed. On this wafer, micromachined microstructures have been fabricated and released. In a method, a photoresist is spun on the full wafer surface, and this photoresist is thick enough to cover all cavities and structures on the wafer, such that the photoresist will protect the released structures free from the chipping, vibrations, and damages in the diamond blade dicing process. In another method, a laser dicing system is utilized to scribe the multi-project wafer placed on a platform, and by precisely controlling the platform moving-track, the dicing path can be programmed to any required shape and region, even it is not straight. In addition, the wafer backside is mounted on a blue-tape at the beginning to enhance the process reliability.
Abstract:
A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.
Abstract:
As robust hinge post structure for use with torsional hinged devices such as micromirrors and method of manufacturing is disclosed. The fabrication process uses a protective layer such as BARC on the bottom of the aperture used to form the hinge post structure to protect an oxide layer during an etching step. The oxide layer, in turn protects the metal layer at the bottom of the aperture. Therefore, the metal layer, the oxide layer, and the protective layer prevent the erosion and/or pitting of the bottom electrode during a cleaning process, and provide additional support to the structure.