Circuit architecture for mode switch

    公开(公告)号:US09733275B2

    公开(公告)日:2017-08-15

    申请号:US14808148

    申请日:2015-07-24

    Abstract: A current detection module capable of differentiating and quantifying contribution to a current signal generated by a sensor in response to stimulation by a certain target source from contributions from sources other than the target source (ambient sources) is disclosed. As long as the contribution from the target source comprises a pulsed signal, the module may synchronize itself to the pulse(s) so that there is a predetermined phase relationship between the pulse(s) and functions carried out by various stages of the module. The module may be re-used to also detect and quantify contributions from ambient sources by presenting these contributions to the module as pulses that trigger synchronization of the module. To that end, a detection system disclosed herein is based on the use of such current detection module and allows mode switching where, depending on the selected mode of operation, the module is configured to perform different measurements.

    AVALANCHE PHOTODIODE RECEIVER
    37.
    发明申请

    公开(公告)号:US20170097263A1

    公开(公告)日:2017-04-06

    申请号:US15379435

    申请日:2016-12-14

    Applicant: Voxtel, inc.

    Inventor: George WILLIAMS

    Abstract: A method of detecting an optical signal, comprising the steps of: providing an avalanche photodiode (APD) comprising a multiplication region capable of amplifying an electric current, said multiplication region, in operation, having a first ionization rate for electrons and a second ionization rate for holes, wherein said first ionization rate is different in magnitude from said second ionization rate, and exposure to the optical signal causes an impulse response; exposing the APD to a modulating optical signal; providing an external circuit that induces an APD bias to the multiplication region; providing an external circuit for amplifying and processing an electric signal from the avalanche photodiode; and modulating the APD bias in a manner that is correlated with the optical signal.

    OPTICAL RECEIVER MODULE
    38.
    发明申请
    OPTICAL RECEIVER MODULE 审中-公开
    光接收模块

    公开(公告)号:US20170038254A1

    公开(公告)日:2017-02-09

    申请号:US15227320

    申请日:2016-08-03

    Abstract: An optical receiver module including: two amplifier arrays in each of which transimpedance amplifiers and first capacitors are arranged in an alternating manner, and an optical detector array, located between the two amplifier arrays, in which a plurality of optical detectors are aligned, wherein the plurality of optical detectors are coupled in an alternating manner to one of the transimpedance amplifiers of one of the two amplifier arrays and to one of the transimpedance amplifiers of the other of the two amplifier arrays, and for each specified optical detector of the plurality of optical detectors, the specified optical detector is coupled to one of the first capacitors of a second amplifier array of the two amplifier arrays, the second amplifier array being different from a first amplifier array that includes one of the transimpedance amplifiers to which the specified optical detector is coupled.

    Abstract translation: 一种光接收器模块,包括:以交替方式布置跨阻放大器和第一电容器的每个中的两个放大器阵列和位于两个放大器阵列之间的光学检测器阵列,其中多个光学检测器对准,其中 多个光学检测器以交替的方式耦合到两个放大器阵列中的一个放大器阵列之一的跨阻抗放大器之一并且耦合到两个放大器阵列中的另一个的跨阻抗放大器之一,并且对于多个光学器件的每个指定的光学检测器 检测器,指定的光学检测器耦合到两个放大器阵列的第二放大器阵列的第一电容器之一,第二放大器阵列不同于第一放大器阵列,该第一放大器阵列包括一个跨阻放大器,指定的光检测器 耦合。

    Method and System for Optoelectronic Receivers Utilizing Waveguide Heterojunction Phototransistors Integrated In A CMOS SOI Wafer
    40.
    发明申请
    Method and System for Optoelectronic Receivers Utilizing Waveguide Heterojunction Phototransistors Integrated In A CMOS SOI Wafer 审中-公开
    使用集成在CMOS SOI晶片中的波导异质结光电晶体管的光电接收机的方法和系统

    公开(公告)号:US20160352431A1

    公开(公告)日:2016-12-01

    申请号:US15231332

    申请日:2016-08-08

    Applicant: Luxtera, Inc.

    Abstract: A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a wafer are disclosed and may include receiving optical signals via optical fibers operably coupled to a top surface of the chip. Electrical signals may be generated utilizing HPTs that detect the optical signals. The electrical signals may be amplified via voltage amplifiers, or transimpedance amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. The optical signals may be coupled into opposite ends of the HPTs. A collector of the HPTs may comprise a silicon layer and a germanium layer, a base may comprise a silicon germanium alloy with germanium composition ranging from 70% to 100%, and an emitter including crystalline or poly Si or SiGe. The optical signals may be demodulated by communicating a mixer signal to a base terminal of the HPTs.

    Abstract translation: 公开了利用集成在晶片中的波导异质结光电晶体管(HPT)的光电子接收器的方法和系统,并且可以包括通过可操作地耦合到芯片顶表面的光纤接收光信号。 可以利用检测光信号的HPT产生电信号。 电信号可以经由电压放大器或跨阻放大器来放大,其输出可用于通过反馈网络偏置HPT。 光信号可以耦合到HPT的相对端。 HPT的集电极可以包括硅层和锗层,碱可以包括具有70%至100%的锗组成的硅锗合金,以及包括晶体或多晶硅或SiGe的发射极。 可以通过将混合器信号传送到HPT的基站来解调光信号。

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