Electron emitters with dopant gradient
    31.
    发明申请
    Electron emitters with dopant gradient 审中-公开
    具有掺杂剂梯度的电子发射体

    公开(公告)号:US20070052339A1

    公开(公告)日:2007-03-08

    申请号:US11591067

    申请日:2006-11-01

    Applicant: David Cathey

    Inventor: David Cathey

    Abstract: Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitter tips and decreases toward the base of the emitter tips. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitter tips having impurity gradients.

    Abstract translation: 公开了电子发射器和制造发射体的方法,其具有杂质的浓度梯度,使得最高浓度的杂质位于发射极尖端的顶点处并朝向发射极尖端的基极减小。 该方法包括掺杂,图案化,蚀刻和氧化衬底的步骤,从而形成具有杂质梯度的发射极尖端。

    FIELD EMITTER DEVICES WITH EMITTERS HAVING IMPLANTED LAYER
    33.
    发明申请
    FIELD EMITTER DEVICES WITH EMITTERS HAVING IMPLANTED LAYER 审中-公开
    具有嵌入层的发射体的场发射器件

    公开(公告)号:US20060238457A1

    公开(公告)日:2006-10-26

    申请号:US11456523

    申请日:2006-07-10

    Applicant: Yongjun Hu

    Inventor: Yongjun Hu

    CPC classification number: H01J9/025 H01J1/3044 H01J2201/30426

    Abstract: Some embodiments of the invention include structures and methods for a field emitter display device with a coating and an implantation layer underneath a surface of the emitter. Other embodiments are described and claimed.

    Abstract translation: 本发明的一些实施例包括用于在发射器的表面下方具有涂层和注入层的场发射器显示装置的结构和方法。 描述和要求保护其他实施例。

    Field emitter devices with emitters having implanted layer
    35.
    发明授权
    Field emitter devices with emitters having implanted layer 有权
    具有注入层的发射体的场致发射器件

    公开(公告)号:US07105997B1

    公开(公告)日:2006-09-12

    申请号:US09387164

    申请日:1999-08-31

    Applicant: Yongjun Hu

    Inventor: Yongjun Hu

    CPC classification number: H01J9/025 H01J1/3044 H01J2201/30426

    Abstract: Structures and methods to ease electron emission and limit outgassing so as to inhibit degradation to the electron beam of a field emitter device are described. In one method to ease such electron emission, a layer of low relative dielectric constant material is formed under the surface of the field emitter tip. Another method is to coat the field emitter tip with a low relative dielectric constant substance or compound to form a layer and then cover that layer with a thin layer of the material of the field emitter tip.

    Abstract translation: 描述了用于缓和电子发射和限制放气以便抑制场发射器件的电子束劣化的结构和方法。 在一种简化这种电子发射的方法中,在场致发射极尖端的表面下形成一层低相对介电常数材料。 另一种方法是用低相对介电常数物质或化合物涂覆场发射器尖端以形成层,然后用场发射器尖端的材料的薄层覆盖该层。

    Field emission device having insulated column lines and method of manufacture
    36.
    发明授权
    Field emission device having insulated column lines and method of manufacture 失效
    具有绝缘柱线的场发射装置及其制造方法

    公开(公告)号:US07105992B2

    公开(公告)日:2006-09-12

    申请号:US10666236

    申请日:2003-09-19

    Applicant: Ammar Derraa

    Inventor: Ammar Derraa

    CPC classification number: H01J3/021 H01J1/3044 H01J9/185 H01J29/481 H01J31/127

    Abstract: An FED and a method of manufacture are provided. The FED includes a cathode assembly containing an improved column line structure. The column line structure includes a conductive structure formed on a substrate. A resistive layer is formed on the conductive structure, and an insulator layer is formed partly over the resistive layer. The contact between the base of the emitter tips and the addressing column line is achieved through a lateral side that is not covered by the insulator layer. The insulator layer helps reduce the possibility of electrical shorting between the addressing column line and the row line structure of the cathode assembly. The insulator layer on top of the addressing column line will allow the use of a thinner subsequent dielectric layer. This thinner dielectric layer, which supports the grid, will provide a lower RC time constant and help achieve better video rate operation. The thinner dielectric layer also will result in smaller grid openings above the tips. This will provide for better beam spots, and, therefore, better image resolution. The thinner dielectric layer will require less applied voltage to extract electrons from the tips, resulting in lower power consumption for the FED.

    Abstract translation: 提供FED和制造方法。 FED包括具有改进的柱线结构的阴极组件。 列线结构包括形成在基板上的导电结构。 在导电结构上形成电阻层,部分地在电阻层上形成绝缘体层。 通过未被绝缘体层覆盖的侧面来实现发射极尖端的基极与寻址列线之间的接触。 绝缘体层有助于减少寻址列线和阴极组件的行线结构之间的电短路的可能性。 在寻址列线顶部的绝缘体层将允许使用更薄的后续介电层。 支持电网的这种较薄的介质层将提供较低的RC时间常数,有助于实现更好的视频速率操作。 更薄的介电层也将导致尖端上方的较小的栅极开口。 这将提供更好的光束点,因此,更好的图像分辨率。 更薄的电介质层将需要更少的施加电压以从尖端提取电子,导致FED的较低功耗。

    Fibrous solid carbon manifold assembly and method for producing the same
    37.
    发明授权
    Fibrous solid carbon manifold assembly and method for producing the same 失效
    纤维固体碳歧管组件及其制造方法

    公开(公告)号:US07041373B2

    公开(公告)日:2006-05-09

    申请号:US10614989

    申请日:2003-07-09

    CPC classification number: B82Y30/00 D01F9/127 H01J1/3044 H01J9/025 Y10T428/30

    Abstract: A fibrous solid carbon manifold assembly and a method for producing the fibrous solid carbon manifold assembly are provided. The fibrous solid carbon manifold assembly has fibrous bodies carbonized, and a limitless number of superfine graphite filaments grown on surfaces of the carbonized fibrous bodies, in the inside of each of said fibrous bodies and in a gap between adjacent ones of said fibrous bodies. With such a configuration, the number of superfine graphite filaments can be increased more greatly.

    Abstract translation: 提供了一种纤维状固体碳歧管组件及其制造方法。 纤维状固体碳歧管组件具有碳化的纤维体,并且在每个所述纤维体的内部和相邻的所述纤维体之间的间隙中生长在碳化纤维体的表面上的无限数量的超细石墨长丝。 通过这样的构造,可以更大程度地提高超细石墨丝的数量。

    Field emission device and manufacturing method thereof
    39.
    发明授权
    Field emission device and manufacturing method thereof 失效
    场发射装置及其制造方法

    公开(公告)号:US07015496B2

    公开(公告)日:2006-03-21

    申请号:US10739155

    申请日:2003-12-19

    CPC classification number: H01J9/025 H01J1/3044

    Abstract: It is an object to provide techniques for forming a field emission device of a field emission display device with the use of an inexpensive large-sized substrate according to the process that enables improving productivity.A field emission device according to the present invention includes a cathode electrode formed on an insulating surface of a substrate and a convex electron emission portion formed at a surface of the cathode electrode, and the cathode electrode and the electron emission portion include the same semiconductor film. The electron emission portion has a conical shape or a whiskers shape.

    Abstract translation: 本发明的目的是提供根据能够提高生产率的方法,通过使用便宜的大尺寸基板来形成场发射显示装置的场致发射装置的技术。 根据本发明的场发射器件包括形成在衬底的绝缘表面上的阴极电极和形成在阴极电极的表面处的凸电子发射部分,并且阴极电极和电子发射部分包括相同的半导体膜 。 电子发射部分具有圆锥形状或晶须形状。

    Cold-cathode electron source, microwave tube using it, and production method thereof
    40.
    发明申请
    Cold-cathode electron source, microwave tube using it, and production method thereof 失效
    冷阴极电子源,使用微波管及其制造方法

    公开(公告)号:US20060001360A1

    公开(公告)日:2006-01-05

    申请号:US11211665

    申请日:2005-08-26

    Abstract: An object of the present invention is to provide a cold-cathode electron source successfully achieving a high frequency and a high output, a microwave tube using it, and a production method thereof. In a cold-cathode electron source according to the present invention, emitters have a tip portion tapered at an aspect ratio R of not less than 4, and thus the capacitance between the emitters and a gate electrode is decreased by a degree of declination from the gate electrode. For this reason, the cold-cathode electron source is able to support an operation at a high frequency. A cathode material of the cold-cathode electron source is none of the conventional cathode materials such as tungsten and silicon, but is a diamond with a high melting point and a high thermal conductivity. For this reason, the emitters are unlikely to melt even at a high current density of an electric current flowing in the emitters, and thus the cold-cathode electron source is able to support an operation at a high output.

    Abstract translation: 本发明的目的是提供一种成功实现高频和高输出的冷阴极电子源,使用它的微波管及其制造方法。 在根据本发明的冷阴极电子源中,发射器具有以不小于4的纵横比R渐缩的尖端部分,因此发射极和栅电极之间的电容从 栅电极。 因此,冷阴极电子源能够以高频率进行动作。 冷阴极电子源的阴极材料不是诸如钨和硅的常规阴极材料,而是具有高熔点和高导热性的金刚石。 因此,即使在发射极中流动的电流的高电流密度下,发射极也不会熔化,因此冷阴极电子源能够支持高输出的动作。

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