Ion source with multi-piece outer cathode
    31.
    发明授权
    Ion source with multi-piece outer cathode 失效
    离子源带多片外阴极

    公开(公告)号:US07405411B2

    公开(公告)日:2008-07-29

    申请号:US11123228

    申请日:2005-05-06

    Applicant: Hugh A. Walton

    Inventor: Hugh A. Walton

    CPC classification number: H01J27/143 H01J27/024 H01J2237/083

    Abstract: In certain example embodiments of this invention, there is provided an ion source including an anode and a cathode. In certain example embodiments, a multi-piece outer cathode is provided. The multi-piece outer cathode allows precision adjustments to be made, thereby permitting adjustment of the magnetic gap between the inner and outer cathodes. This allows improved performance to be realized, and/or prolonged operating life of certain components. This may also permit multiple types of gap adjustment to be performed with different sized outer cathode end pieces. In certain example embodiments, cathode fabrication costs may also be reduced.

    Abstract translation: 在本发明的某些示例性实施例中,提供了一种包括阳极和阴极的离子源。 在某些示例性实施例中,提供多片外部阴极。 多片外阴极允许进行精密调节,从而允许调节内阴极和外阴极之间的磁隙。 这允许实现改进的性能,和/或延长某些部件的使用寿命。 这也可以允许用不同尺寸的外部阴极端部件执行多种类型的间隙调节。 在某些示例性实施例中,也可以降低阴极制造成本。

    Semiconductor apparatus using ion beam
    32.
    发明申请
    Semiconductor apparatus using ion beam 审中-公开
    使用离子束的半导体装置

    公开(公告)号:US20080164819A1

    公开(公告)日:2008-07-10

    申请号:US12007187

    申请日:2008-01-08

    Abstract: Provided is a semiconductor apparatus using an ion beam. The semiconductor apparatus may include a first grid to which a voltage applied. The voltage applied to the first grid may have the same potential level as that of a reference voltage applied to a wall portion of a plasma chamber in which plasma may be generated. The first grid may adjoin the plasma. Therefore, a potential level difference between the first grid and the wall portion of the plasma chamber may be zero, and thus the plasma may be stable.

    Abstract translation: 提供了使用离子束的半导体装置。 半导体装置可以包括施加电压的第一栅极。 施加到第一栅极的电压可以具有与施加到其中可能产生等离子体的等离子体室的壁部分的参考电压相同的电位电平。 第一个栅格可能与等离子体相邻。 因此,等离子体室的第一栅极和壁部之间的电位差可以为零,因此等离子体可以是稳定的。

    Controlling The Flow Of Vapors Sublimated From Solids
    33.
    发明申请
    Controlling The Flow Of Vapors Sublimated From Solids 有权
    控制从固体升华的蒸气流

    公开(公告)号:US20080047607A1

    公开(公告)日:2008-02-28

    申请号:US10582524

    申请日:2004-12-09

    Abstract: A vapor delivery system for delivering a steady flow of sublimated vapor to a vacuum chamber comprises a vaporizer of solid material, a mechanical throttling valve, and a pressure gauge, followed by a vapor conduit to the vacuum chamber. The vapor flow rate is determined by both the temperature of the vaporizer and the setting of the conductance of the mechanical throttle valve located between the vaporizer and the vacuum chamber. The temperature of the vaporizer is determined by closed-loop control to a set-point temperature. The mechanical throttle valve is electrically controlled, e.g. the valve position is under closed-loop control to the output of the pressure gauge. In this way the vapor flow rate can be generally proportional to the pressure gauge output. All surfaces exposed to the vapor from the vaporizer to the vacuum chamber are heated to prevent condensation. A gate valve and a rotary butterfly valve are shown acting as the upstream throttling valve. Employing a fixed charge of solid material, the temperature of the vaporizer may be held steady for a prolonged period, during which the throttle valve is gradually opened from a lower conductance of its operating range as the charge sublimes. When a greater valve displacement is reached, the temperature is raised, to enable the valve to readjust to its lower conductance setting from which it can again gradually open as more of the charge is consumed.

    Abstract translation: 用于将稳定的升华蒸气输送到真空室的蒸气输送系统包括固体材料的蒸发器,机械节流阀和压力计,随后是到真空室的蒸汽导管。 蒸汽流量由蒸发器的温度和位于蒸发器和真空室之间的机械节流阀的电导率的设定决定。 蒸发器的温度通过闭环控制确定为设定点温度。 机械节流阀是电控制的,例如, 阀门位置在压力计的输出端处于闭环控制下。 以这种方式,蒸汽流速可以与压力表输出大致成比例。 暴露于蒸发器到真空室的蒸汽的所有表面都被加热以防止冷凝。 闸阀和旋转蝶阀显示为上游节流阀。 采用固定材料的固定电荷,蒸发器的温度可以长时间保持稳定,在此期间,随着充电升华,节流阀从其工作范围的较低电导逐渐打开。 当达到更大的阀位移时,温度升高,使得阀能够重新调整到其较低的电导设置,随着更多的电荷消耗,它可以再次逐渐打开。

    Method And Apparatus For Extending Equipment Uptime In Ion Implantation
    34.
    发明申请
    Method And Apparatus For Extending Equipment Uptime In Ion Implantation 有权
    用于延长设备的方法和设备在离子注入中的正常运行时间

    公开(公告)号:US20070210260A1

    公开(公告)日:2007-09-13

    申请号:US10582392

    申请日:2004-12-09

    Abstract: The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases (F or Cl), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecarborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

    Abstract translation: 离子源的使用寿命通过源具有使用反应性卤素气体(F或Cl)对离子源和引出电极进行原位蚀刻清洁的规定而增强或延长,并且具有延长使用寿命的特征 清洁之间的持续时间。 后者包括准确的蒸汽流量控制,离子束光学的精确聚焦,以及防止沉积物形成或防止电极破坏的引出电极的热控制。 包括用于产生用于半导体晶片处理的掺杂剂离子的离子源的装置耦合到远程等离子体源,其将F或Cl离子递送到第一离子源,以清除第一离子源和提取电极中的沉积物。 这些方法和装置在运行诸如升华蒸汽源的可冷凝进料气体时能够延长设备正常运行时间,并且特别适用于所谓的冷离子源。 描述了使用十硼烷和十八烷硼烷作为原料的长设备正常运行时间以及当使用蒸发的元素砷和磷时能够延长设备运行时间的方法和装置,并且其用于增强离子注入期间的束稳定性。

    Ion source section for ion implantation equipment

    公开(公告)号:US20060022144A1

    公开(公告)日:2006-02-02

    申请号:US11194594

    申请日:2005-08-01

    Applicant: Kwang-Ho Cha

    Inventor: Kwang-Ho Cha

    Abstract: An ion source section of ion implantation equipment for ionizing reaction gas in an ion implantation process of semiconductor manufacturing processes is disclosed. The ion source section includes a source aperture member separable from an arc chamber and having an ion-discharging hole through which the ion beam discharges. The source aperture member consists of a first plate, a second plate adjacent to the first plate and facing the arc chamber, and a third plate to protect the exposed second plate from the ionized reaction gas.

    Apparatus for focusing particle beam using radiation pressure
    36.
    发明申请
    Apparatus for focusing particle beam using radiation pressure 失效
    使用辐射压力聚焦粒子束的装置

    公开(公告)号:US20060011872A1

    公开(公告)日:2006-01-19

    申请号:US10976095

    申请日:2004-10-27

    CPC classification number: H01J27/024

    Abstract: The present invention relates to an apparatus for focusing particle beams using a radiation pressure capable of obtaining the same flow amount and a narrower particle beam width with respect to the particle size and a higher numeral density. It is possible to form the particle beams by applying the radiation pressure to the particles with respect to the flow condition that cannot form the particle beams with respect to the set particle sizes. There is provided an apparatus for focusing particle beams using a radiation pressure, comprising an orifice part that is provided at a predetermined portion of the flow tube, and a lens having a hole with a predetermined diameter for thereby focusing the particle flow into a particle beam and applying a radiation pressure to the flow particles; and a light source supply part (A) provided at a portion opposite to the discharge outlet of the mixing tube.

    Abstract translation: 本发明涉及一种使用能够获得相对于粒径和较高数字密度获得相同流量和较窄粒子束宽度的辐射压力来聚焦粒子束的装置。 相对于不能相对于设定粒径形成粒子束的流动条件,向粒子施加辐射压力可以形成粒子束。 提供了一种用于使用辐射压力聚焦粒子束的装置,包括设置在流量管的预定部分处的孔部分和具有预定直径的孔的透镜,从而将颗粒流聚焦成粒子束 并向所述流动颗粒施加辐射压力; 以及设置在与混合管的排出口相对的部分处的光源供应部分(A)。

    Ion optics with shallow dished grids
    37.
    发明授权
    Ion optics with shallow dished grids 有权
    离子光学与浅盘形网格

    公开(公告)号:US06864485B2

    公开(公告)日:2005-03-08

    申请号:US10001165

    申请日:2001-12-04

    CPC classification number: H01J27/024

    Abstract: In accordance with one specific embodiment of the present invention, the ion optics for use with an ion source have a plurality of electrically conductive grids that are mutually spaced apart and have mutually aligned respective pluralities of apertures through which ions may be accelerated and wherein each grid has an integral peripheral portion. A plurality of moment means are applied to a circumferentially distributed plurality of locations on the peripheral portion of each grid, which is initially flat, thereby establishing an annular segment of a cone as the approximate shape for that peripheral portion and a segment of a sphere as the approximate dished shape for the grid as a whole. The plurality of grids have conformal shapes in that the direction of deformation and the approximate spherical radii are the same. This elastic deformation during installation avoids any need for any permanent or inelastic deformation during fabrication, as well as controlling the excessive thermal displacements and accompanying performance changes to which flat grids are prone.

    Abstract translation: 根据本发明的一个具体实施例,与离子源一起使用的离子光学器件具有多个相互间隔开的导电栅格,并且具有相互排列的多个孔,通过该孔可以离子加速,并且其中每个栅格 具有整体的周边部分。 多个力矩装置被施加到每个格栅的周边部分上的周向分布的多个位置,其最初是平坦的,从而建立锥体的环形段作为该外围部分和球体的一部分的近似形状, 作为整体的网格的近似抛光形状。 多个格栅具有共形形状,因为变形方向和近似球面半径相同。 安装过程中的这种弹性变形避免了在制造过程中任何永久性或非弹性变形的任何需要,以及控制过度的热位移和伴随的平坦栅格易于发生的性能变化。

    Charged particle beam extraction and formation apparatus

    公开(公告)号:US20040212288A1

    公开(公告)日:2004-10-28

    申请号:US10855245

    申请日:2004-05-27

    Abstract: A charged particle apparatus, with multiple electrically conducting semispheric grid electrodes, the grid electrodes mounted in a dielectric mounting ring, with hidden areas or regions to maintain electrical isolation between the grid electrodes as sputter deposits form on the grid electrodes and mounting ring. The grid electrodes are mounted to the mounting ring with slots and fastening pins that allow sliding thermal expansion and contraction between the grid electrodes and mounting ring while substantially maintaining alignment of grid openings and spacing between the grid electrodes. Asymmetric fastening pins facilitate the sliding thermal expansion while restraining the grid electrodes. Electrical contactors supply and maintain electrical potentials of the grid electrodes with spring loaded sliding contacts, without substantially affecting the thermal characteristics of the grid electrodes.

    Charged particle beam extraction and formation apparatus
    39.
    发明授权
    Charged particle beam extraction and formation apparatus 有权
    带电粒子束提取和形成装置

    公开(公告)号:US06774550B2

    公开(公告)日:2004-08-10

    申请号:US10413176

    申请日:2003-04-14

    Abstract: A charged particle apparatus, with multiple electrically conducting semispheric grid electrodes, the grid electrodes mounted in a dielectric mounting ring, with hidden areas or regions to maintain electrical isolation between the grid electrodes as sputter deposits form on the grid electrodes and mounting ring. The grid electrodes are mounted to the mounting ring with slots and fastening pins that allow sliding thermal expansion and contraction between the grid electrodes and mounting ring while substantially maintaining alignment of grid openings and spacing between the grid electrodes. Asymmetric fastening pins facilitate the sliding thermal expansion while restraining the grid electrodes. Electrical contactors supply and maintain electrical potentials of the grid electrodes with spring loaded sliding contacts, without substantially affecting the thermal characteristics of the grid electrodes.

    Abstract translation: 带有电荷的粒子装置,具有多个导电半球栅格电极,栅格电极安装在介电安装环中,具有隐藏的区域或区域,以在栅电极和安装环之间形成溅射沉积,以维持栅电极之间的电隔离。 栅格电极通过槽和紧固销安装到安装环上,这些插槽和紧固销允许网格电极和安装环之间的滑动热膨胀和收缩,同时基本上保持网格开口的对准和栅格电极之间的间隔。 不对称的紧固销便于滑动热膨胀同时限制栅格电极。 电接触器通过弹簧加载的滑动触点来提供和维持栅格电极的电位,而基本上不影响栅格电极的热特性。

    Multi-grid ion beam source for generating a highly collimated ion beam
    40.
    发明授权
    Multi-grid ion beam source for generating a highly collimated ion beam 失效
    用于产生高准直离子束的多栅离子束源

    公开(公告)号:US06759807B2

    公开(公告)日:2004-07-06

    申请号:US10117004

    申请日:2002-04-04

    CPC classification number: H01J27/024

    Abstract: A multi-grid ion beam source has an extraction grid, an acceleration grid, a focus grid, and a shield grid to produce a highly collimated ion beam. A five grid ion beam source is also disclosed having two shield grids. The extraction grid has a high positive potential and covers a plasma chamber containing plasma. The acceleration grid has a non-positive potential. The focus grid is positioned between the acceleration grid and the shield grid. The combination of the extraction grid and the acceleration grid extracts ions from the plasma. The focus grid acts to change momentum of the ions exiting the acceleration grid, focusing the ions into a more collimated ion beam than previous approaches. In one embodiment, the focus grid has a large positive potential. In another embodiment, the focus grid has a large negative potential.

    Abstract translation: 多栅离子束源具有提取栅格,加速栅格,焦点栅格和屏蔽栅格,以产生高度准直的离子束。 还公开了一种五栅离子束源,其具有两个屏蔽网格。 提取格栅具有高正电位并且覆盖包含等离子体的等离子体室。 加速度网格具有非正电位。 焦点网格位于加速网格和屏蔽网格之间。 提取网格和加速度格栅的组合从等离子体中提取离子。 焦点网格用于改变离开加速度格栅的离子的动量,将离子聚焦成比以前的方法更准确的离子束。 在一个实施例中,聚焦网格具有大的正电位。 在另一个实施例中,焦点栅格具有大的负电位。

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