公开(公告)号：US10361111B2

公开(公告)日：2019-07-23

申请号：US15888161

申请日：2018-02-05

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shogo Okita ,  Takahiro Miyai

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67 ,  H01L21/78 ,  H01L21/3065 ,  H01L21/66 ,  H01J37/00 ,  H01L21/687

Abstract: Provided is a plasma processing apparatus which comprises a chamber, a stage configured to set a holding sheet and a substrate held thereon, a securing mechanism configured to secure the holding sheet on the stage, a plasma generator including a first electrode and a first high-frequency power supply, and a determiner for determining a contact status between the holding sheet and the stage, wherein a gas through-hole is arranged on a surface of the stage in an annular region defined between an inner edge of a frame set on the stage and an outer edge of the substrate, and wherein the determiner is configured to determine the contact status in accordance with a pressure of a gas in the gas introduction conduit and/or a regulation data for regulating the pressure of the gas, the gas being introduced between the stage and the holding sheet from the gas through-hole.

公开(公告)号：US10297487B2

公开(公告)日：2019-05-21

申请号：US15822568

申请日：2017-11-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shogo Okita ,  Atsushi Harikai ,  Noriyuki Matsubara ,  Akihiro Itou

IPC: H01L21/683 ,  H01L21/311 ,  H01L21/78 ,  H01L21/304 ,  H01L23/00 ,  H01J37/00 ,  H01L21/67

Abstract: Provided is a method of manufacturing a semiconductor chip, the method comprising: preparing a plurality of semiconductor chips, each of which has a surface to which a BG tape is stuck, and a rear surface to which a DAF is stuck, and which are held spaced from each other by the BG tape and the DAF, exposing the DAF between semiconductor chips that are adjacent to each other when viewed from the surface side, by stripping the BG tape from the surface of each of the plurality of semiconductor chips, etching the DAF that is exposed between the semiconductor chips that are adjacent to each other, by irradiating the plurality of semiconductor chips held on the DAF, with plasma.

公开(公告)号：US10224212B2

公开(公告)日：2019-03-05

申请号：US15876576

申请日：2018-01-22

Applicant: Lam Research Corporation

Inventor： Yunsang Kim ,  Hyuk-Jun Kwon ,  Dong Woo Paeng ,  He Zhang

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/324 ,  H01L21/67 ,  H01J37/00

Abstract: A method for isotropically etching film on a substrate with atomic layer control includes a) providing a substrate including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium (SiGe). The method includes b) depositing a sacrificial layer on the material in a processing chamber by: cooling a lower portion of the substrate; one of creating or supplying an oxidant-containing plasma in the processing chamber; and increasing a surface temperature of the substrate for a predetermined period using rapid thermal heating while creating or supplying the oxidant-containing plasma in the processing chamber. The method includes c) purging the processing chamber. The method includes d) etching the sacrificial layer and the material by supplying an etch gas mixture and striking plasma in the processing chamber.

公开(公告)号：US10216088B2

公开(公告)日：2019-02-26

申请号：US15615348

申请日：2017-06-06

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Peng Liu ,  Wei Zhao ,  Xiao-Yang Lin ,  Duan-Liang Zhou ,  Chun-Hai Zhang ,  Kai-Li Jiang ,  Shou-Shan Fan

IPC: G03F7/20 ,  H01J37/00

Abstract: The disclosure relates to a photolithography method based on electronic beam. The method includes: providing an electronic beam; making the electron beam transmit a two dimensional nanomaterial to form a transmission electron beam and a number of diffraction electron beams; shielding the transmission electron beam; and radiating a surface of an object by the plurality of diffraction electron beams. The photolithography method is high efficiency and has low cost.

公开(公告)号：US10204761B2

公开(公告)日：2019-02-12

申请号：US15514539

申请日：2014-10-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Takeshi Sunaoshi ,  Yasuhira Nagakubo ,  Kazutaka Nimura

IPC: H01J37/00 ,  H01J37/28 ,  H01J37/20 ,  H01J37/18

Abstract: Provided is an electron microscope with which a sample can be observed stably and with high accuracy. The electron microscope comprises: a sample stage; an electron optical system that scans an electron beam over a sample; a vacuum system that maintains the sample stage and the electron optical system in a vacuum; a secondary electron detector that detects secondary electrons emitted from the sample; transmitted electron detectors that detect transmitted electrons that have transmitted through the sample; and a control device that obtains a secondary electron image and a transmitted electron image on the basis of the secondary electrons and the transmitted electrons detected by the secondary electron detector and the transmitted electron detectors and stores the secondary electron image and the transmitted electron image. The sample stage is provided with cooling means for cooling the sample. The vacuum system is provided with a cold trap that sucks moisture from around the sample and a vacuum gauge that measures the degree of vacuum of the vacuum system.

公开(公告)号：US10128087B2

公开(公告)日：2018-11-13

申请号：US14680244

申请日：2015-04-07

Applicant: Lam Research Corporation

Inventor： Mark Taskar ,  Iqbal Shareef

IPC: H01J37/00 ,  H01J37/32 ,  B01F3/02 ,  B01F5/04

Abstract: A gas delivery apparatus for supplying process gas to a processing chamber of a plasma processing apparatus includes a mixing manifold having a plurality of gas inlets on a surface thereof, the gas inlets being equally spaced from a center mixing point of the mixing manifold; and optionally a plurality of gas supplies in communication with the plurality of gas inlets on the surface of the mixing manifold. A method of supplying gas to a processing chamber of a plasma processing apparatus using such a gas delivery apparatus involves providing a plurality of gas supplies in communication with a plurality of gas inlets on a surface of a mixing manifold; flowing at least two different gases from the plurality of gas supplies to the mixing manifold to create a first mixed gas; and supplying the first mixed gas to a plasma processing chamber coupled downstream of the mixing manifold.

公开(公告)号：US10114368B2

公开(公告)日：2018-10-30

申请号：US13948118

申请日：2013-07-22

Applicant: Applied Materials Israel Ltd.

Inventor： Gadi Greenberg ,  Idan Kaizerman ,  Zeev Zohar

IPC: G06K9/00 ,  G05B19/418 ,  H01J37/00 ,  G06T7/00 ,  H01L21/66

Abstract: Inspection apparatus includes an imaging module, which is configured to capture images of defects at different, respective locations on a sample. A processor is coupled to process the images so as to automatically assign respective classifications to the defects, and to autonomously control the imaging module to continue capturing the images responsively to the assigned classifications.

公开(公告)号：US10109451B2

公开(公告)日：2018-10-23

申请号：US15431098

申请日：2017-02-13

Applicant: Applied Materials, Inc.

Inventor： Georg Jost ,  Ludwig Ledl ,  Bernhard G. Mueller ,  George Tzeng

IPC: H01J37/00 ,  H01J37/02 ,  H01J37/18 ,  H01J37/26

Abstract: A charge control apparatus for controlling charge on a substrate in a vacuum chamber is described. The apparatus includes a light source emitting a beam of radiation having a divergence; a mirror configured to reflect the beam of radiation, wherein a curvature of a mirror surface of the curved mirror is configured to reduce the divergence of the beam of radiation; and a mirror support configured to rotatably support the curved mirror, wherein a rotation of the mirror varies the direction of the beam of radiation.

公开(公告)号：US10101150B2

公开(公告)日：2018-10-16

申请号：US15533489

申请日：2014-12-10

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroki Kawada ,  Muneyuki Fukuda ,  Yoshinori Momonoi ,  Shou Takami

IPC: H01J37/00 ,  G01B15/02 ,  H01J37/317

Abstract: The objective of the present invention is to provide a height measurement device capable of highly accurate measurement in the depth direction of a structure on a sample. To achieve this objective, proposed are a charged particle beam device and a height measurement device that is provided with a calculation device for determining the size of a structure on a sample on the basis of a detection signal obtained by irradiating the sample with a charged particle beam, wherein the calculation device calculates the distance from a first charged particle beam irradiation mark formed at a first height on the sample and a second charged particle beam irradiation mark formed at a second height on the sample and on the basis of this distance and the charged particle beam irradiation angle when the first charged particle beam irradiation mark and second charged particle beam irradiation mark were formed, calculates the distance between the first height and the second height.

公开(公告)号：US10096450B2

公开(公告)日：2018-10-09

申请号：US14979583

申请日：2015-12-28

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Herre Tjerk Steenstra

IPC: H01J37/00 ,  H01J37/24 ,  H01J37/04 ,  H01J37/317

Abstract: A method for initializing a first operation in a first module at a first start time value in a first time base, the method comprising generating a clock signal, generating a second time base in the first module based on the clock signal, determining a second sync value in the second time base, determining a first sync value in the first time base corresponding to a second sync value in the second time base, determining a start trigger value in the second time base based on the first sync value and the start time value in the first time base, and initializing the first operation in the first module based on the start trigger value and a current value of the second time base in the first module.